Rachna .1,Sameer Sapra1
Indian Institute of Technology1
Rachna .1,Sameer Sapra1
Indian Institute of Technology1
Significant research efforts have been directed towards modification of STEs in lead-free halide double perovskite Cs<sub>2</sub>AgInCl<sub>6</sub> to improve its suitability for white light applications. However, limited attention has been given to exploring the fundamental photophysical phenomenon of this material. Herein, we have demonstrated that the precise introduction of Al<sup>3+</sup> can effectively adjust the material's bandgap, leading to red shifted excitation energy and enhanced STE emission. Additionally, cryogenic PL measurements discovered an inhomogeneous nature of STE emission due to the presence of defect states and is subject to thermal quenching. The increased Hyang Rhys factor show better electron phonon coupling and high density of STE states post Al<sup>3+</sup> doping. Ultrafast transient absorption spectroscopy elucidated the trapping of charge carriers and provided insights into the effects of Al<sup>3+</sup> doping on the formation self-trapped states. Overall, this study offers a comprehensive understanding of the origins of self-trapping in Cs<sub>2</sub>AgInCl<sub>6</sub> and emphasizes the potential of compositional engineering to mitigate self-trapping in this material.