Low-Temperature Synthesis of MoS2 by Plasma-Assisted CVD for Transparent Transistors

MoS₂-based transparent electronics can transform state-of-the-art display technology. The low-temperature synthesis of MoS₂ below the softening temperature of low-cost glasses is a crucial requirement. In this study, plasma-enhanced chemical vapor deposition is employed to synthesize large-area bilayer MoS₂ on an inexpensive microscopic glass (area ≈27 cm²). A 7 × 7 array of top-gated thin film transistors (TFTs) with Al₂O₃ dielectric are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated performance parameters, such as photoresponsivity, which is found to be 27 A W⁻¹ (at λ= 405 nm and an incident power density of 0.42 mW cm⁻²). The stable and uniform photo-responsive behavior of transparent MoS₂TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics