Thomas Kempa1
Johns Hopkins University1
Thomas Kempa1
Johns Hopkins University1
The tuning of lateral and vertical interfaces between 2D materials offers a powerful means of eliciting new phenomena. Vertical stacking of 2D atomic crystals or synthesis of 2D crystals with embedded lateral junctions furnishes materials with heterointerfaces that support unique excitonic, electronic, and magnetic properties. Here we present our progress towards the investigation of two new interfaces in and between 2D materials. First, we perform directed growth of heterostructured transition metal dichalcogenide nanoribbons with the goal of achieving precise control over the type, location, and extent of lateral heterointerfaces in these crystals. Precise spatial control over the placement of these heterointerfaces provides new avenues for tuning the optoelectronic properties of these crystals and permits realization of candidate single-photon emitters. Second, we explore the design of heterointerfaces between 2D atomic crystals and 2D molecular assemblies. The intersection of these atomic lattices with synthetic molecular lattices adds new degrees of freedom for tuning and instantiating electronic states through control of spin-orbit coupling gap, charge transfer, and dielectric environment. We demonstrate how such architectures offer fertile ground to explore new photonic devices.