Monica Morales-Masis1
University of Twente1
The adoption of new semiconductor materials in high-end technologies, such as multi-junction devices, integrated circuits and other, demands fabrication processes that allow a high level of control over film properties such as composition, microstructure, thickness and conformality. The ability to control the film formation of semiconductors like indium phosphide, gallium arsenide, and several metal oxides and nitrides, opened the way for applications such as light emitting devices, high-efficiency photovoltaics and integrated electronics and photonics. Halide perovskites have demonstrated a huge potential in optoelectronic applications, and as the understanding and compositional landscape increases for this family of materials, interesting properties for applications beyond optoelectronics are being investigated. The ability to control the growth of these new perovskites in thin film form, with flexibility for composition exploration and full control on polymorph and thickness will aid the experimental validation of new physical phenomena as well as the exploration on various applications. In this presentation, we will discuss how we leverage pulsed laser deposition (PLD) as a unique single-source vapor deposition method allowing near-stoichiometric transfer of multi-compounds from a single solid target to a thin film. We demonstrate PLD of a variety of compounds from multi-organic cation perovskites, to inorganic halide perovskites and chalco-halide perovskites. The critical role of the PLD parameters to control deposition rate and microstructure from polycrystalline up to epitaxial formation will be discussed. In addition to growth control, PLD allows for heterostructure formation, conformal deposition and patterning, all important steps for integration in various device platforms. This work proposes strategies for growth control, versatile film deposition and the possibility of complex device integration of a large variety of halide perovskite compositions.