MRS Meetings and Events

 

EL21.02.05 2023 MRS Spring Meeting

Highly Linear Weight Update of IGZO Photonic-Synaptic Transistors by Controlling Oxygen Vacancy for Neuromorphic Computing

When and Where

Apr 11, 2023
2:45pm - 3:00pm

Moscone West, Level 3, Room 3011

Presenter

Co-Author(s)

Taewon Seo1,Juyoung Yun1,Yoonyoung Chung1

Pohang University of Science and Technology1

Abstract

Taewon Seo1,Juyoung Yun1,Yoonyoung Chung1

Pohang University of Science and Technology1
Optoelectronic synaptic devices attract considerable attention for neuromorphic computing due to high bandwidth and ultrafast signal transmission. IGZO-based photonic transistors have been studied for synaptic devices because of their CMOS compatibility, ultralow-off current, and transparency. They exhibit excellent synaptic functions, such as paired-pulse facilitation (PPF), photonic potentiation/electrical depression, and transition from short-term plasticity to long-term plasticity. However, IGZO-based synaptic transistors have a problem with the weight update nonlinearity, the most critical factor for the accuracy of artificial neural network (ANN).<br/>Now, we suggest a method to improve the linearity of potentiation/depression plasticity of IGZO TFTs by controlling oxygen vacancies in IGZO thin film. First, a substrate bias was applied during IGZO deposition to remove unstable oxygen bonds. Second, nitrogen plasma was followed to fill the generated oxygen vacancies. X-ray photoelectron spectroscopy (XPS) data showed oxygen vacancies effectively reduced by 35 % using our approach. As oxygen vacancies in IGZO thin film decreased, the recovery behavior of excitatory post-synaptic current (EPSC) was almost improved by two times. PPF measurement, indicating an increase in the post-synaptic response by the second stimulation compared to the first stimulation, exhibited that oxygen vacancy-controlled IGZO-based synaptic transistors perfectly mimic biological synapses. Especially, the nonlinearity factor of weight update was dramatically improved from 1.55 to 0.41, which is a sufficient level for highly accurate ANN. By solving the problem of the weight update nonlinearity in IGZO-based synaptic transistor, which has a benefit in CMOS compatibility and ultralow off current, our approach enables the implementation of ultra-low-power and high-performance artificial optoelectronic circuits for neuromorphic computing.

Symposium Organizers

Iuliana Radu, Taiwan Semiconductor Manufacturing Company Limited
Heike Riel, IBM Research GmbH
Subhash Shinde, University of Notre Dame
Hui Jae Yoo, Intel Corporation

Symposium Support

Gold
Center for Sustainable Energy (ND Energy) and Office of Research

Silver
Raith America, Inc.

Publishing Alliance

MRS publishes with Springer Nature