Storage Charge Boosting Dependence of Ferroelectric-Based Capacitors on Various Electrical Input Pulse

With the development of high-technology industries, advanced semiconductor studies to further reduce power consumption in nanoscale devices and store extremely large amounts of data are actively conducted. In DRAM technology, the efforts to overcome the reduced storage charge caused by scaling down are increasing. Recently, the negative capacitance (NC) effect of Ferroelectric is attracting attention as a solution that can provide operation with large capacitance density and low power consumption by improving energy efficiency. The NC effect based on Landau-Ginzburg-Devonshire Theory (LGD) is related to the intrinsic double-well shape of the Ferroelectric polarization-energy landscape. In addition, electrical measurements under certain conditions occur charge boosting by controlling the depolarization field. Many studies have demonstrated the possibility of direct NC effect observation and charge boosting due to the polarization switching of ferroelectricity. However, the key factor of the direct correlation between the polarization switching of ferroelectricity and charge boosting, according to input energy, is still not identified. In this study, polarization switching and charge boosting according to pulse conditions applied to Ferroelectric capacitors were analyzed from an energy perspective. A Zr-doped HfO₂-based Ferroelectric capacitor was developed, and the effect of controlling charge boosting was observed depending on the artificial electrical signals. With These results, we will present the applicability of DRAM cell CAP of Ferroelectric capacitors.