Visible Light Stimulated Optoelectronic Synaptic Transistor via Solution Processed Vertically Diffused Cd Doped IGZO

Inspired by the human visual system, optoelectronic synaptic transistors have recently received a great deal of attention as a promising candidate for next-generation neuromorphic computing systems. To fully leverage the advantages of such systems, it is essential to address the challenges of developing low-cost, large-area, and solution-processable optoelectronic devices that can maintain long-term stability. In this study, we introduce an indium gallium zinc oxide (IGZO) based optoelectronic synaptic transistor by doping cadmium(Cd) using vertical diffusion process. By employing visible light stimulation, we successfully demonstrated a fundamental synaptic properties of the device, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), and short-term plasticity(STP) to long-term plasticity(LTP) conversion. In addition, the Cd dopant act as an n-type dopant, resulting in improved electrical characteristics, such as field-effect mobility and on/off current ratio. Our findings offer a promising approach for advancing the development of visible light optoelectronic synaptic transistors for next-generation neuromorphic computing systems.