Nonlocal Spin Transport Property of Chemical Vapor Deposition - Grown Tellurium Crystal

Chiral crystalline materials have a unique and robust spin-momentum relation allowing the design of energy-efficient spintronic devices. For example, when electrons flow in chiral materials, the electron spin is polarized either parallel or antiparallel to the current direction. In this work, we report the nonlocal spin transport characteristics of chemical vapor deposition - synthesized single crystalline Te crystal. We apply inversion spin hall effect to measure the current-induced spin in Te crystal. We find that the spin polarization can transport several hundreds of micrometers at room temperature. This work provides resilient testbeds for future development of practical spintronic devices.