Correlation Between Transient Response and Neuromorphic Behavior in P3HT based-Ion Gated Transistors.

Ion-gated transistors (IGTs), by perceiving dynamically the environment, can be studied and exploited as synaptic transistors in neuromorphic computing.<br/>Depending on the permeability of the semiconducting channel to ions, IGTs undergo volumetric (three-dimensional) or electrostatic (field-effect, two-dimensional) doping, which leads to a wide range of response times. Long-term memory and high-speed data processing are essential for neuromorphic computing.<br/>We propose a method to modulate the response time and synaptic plasticity of IGTs made up of poly (3-hexylthiophene, P3HT) gated by the [EMIM][TFSI] ionic liquid. We report on the effect of the frequency of the (gate-source voltage) V_gs pulses, the number of applied V_gs pulses, and the pulse duration time on the IGT response time. By increasing V_ds from -0.2 V to -1 V, we observed that the response time halves using a 200 ms-long square step V_gs = -0.5 V pulse. Moreover, increasing V_gsfrom -0.5 V to -1 V increases the response time by 27% in V_ds = -1 V. The methodology also includes the effect of the V_gs sampling time on the accuracy of electric measurements.<br/>Our results shed light on the impact of various aspects of the input voltages on establishing the response time behavior and synaptic functions in organic IGTs, to reach low-power and fast-switching neuromorphic devices.&lt;quillbot-extension-portal&gt;&lt;/quillbot-extension-portal&gt;