2D Materials Design for Angstrom-Scale Multi-Stack Devices

Due to our life style changes, data created exponentially and continuously increases. To respond to the huge Data created, conventional Si device scaling down for angstrom era, and 3D stacking device and introduction of disruptive device should be considered [1]. However, the process technology and material performance of Si devices are gradually reaching their limits, and the development of new materials, processes and device architectures is required to overcome these limitations. Graphene and 2D Materials have an ultra-thin crystal structure with a stable surface state. For example, among diverse 2D materials, MoS₂ has a great potential in logic transistor because of its high mobility, and no short channel effect [2].<br/>In this talk, we will introduce 2D material and integration designs via interface property control to realize the Angstrom-scale multi-stack device: (i) adhesion/pattern [3], and (ii) Interconnect with a low resistance metal barrier [4] and ultralow dielectric material [5].<br/><br/>[1] M. C. Lemme., et al., “2D materials for future heterogeneous electronics” <b>Nat. Comm.</b> 13, 1392, 2022<br/>[2] Y. Liu, <u>H.-J. Shin</u> et. al., “Promises and prospects of two-dimensional transistors” <b>Nature</b>, 591 (7848), 43-53, 2021<br/>[3] V. L. Nguyen, <u>H.-J. Shin*</u> et. al., “Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography” <b>Nat. Electron. </b>5 (12), 2363, 2022<br/>[4] C.-S. Lee, <u>H.-J. Shin*</u> et. al., “Fabrication of metal/graphene hybrid interconnect by direct graphene growth and their integration properties” <b>Adv. Electron. Mater.</b>, 12 (4), 1700624, 2018<br/>[5] S. Hong, <u>H.-J. Shin*</u> et. al, “Ultralow-dielectric-constant amorphous boron nitride” <b>Nature</b>, 582 (7813), 511, 2020