Direct Current-Generating Triboelectric Nanogenerators Based on Tribovoltaic p-n Junction with ChCl-Passivated CsFAMA Perovskite

Herein, we develop direct current-generating triboelectric nanogenerators (DC-TENGs) based on the tribovoltaic p-n junction using n-type perovskite (CsFAMA) and p-type conductive polymer (PEDOT:PSS); CsFAMA based DCTENG is shown to generate a high DC power output of about 2.1 µA cm^{− 2} (current) and 0.33 V (voltage). We also introduce choline chloride (ChCl) to passivate the defects inside CsFAMA to improve the power-generating performance of DC-TENG by increasing triboelectric charge density, carrier mobility, and built-in potential, which are the key factors that determine device performance. Due to the synergetic effect of reduced defect sites (5.0×10¹⁵ cm^{− 3} to 1.0×10¹⁵ cm^{− 3} ), enhanced electron mobilities (1.0×10^{− 2} cm² V^{− 1} s ^{− 1} to 2.3×10^{− 2} cm² V^{− 1} S^{− 1} ), and modulated work function, the passivated CsFAMA-based DC-TENG generates an output current density of 11 µA cm^{− 2} and an output voltage of 0.80 V. Our results are expected to contribute to the development of high-performance DC-TENGs by presenting a promising strategy that involves controlling the triboelectric semiconducting interface.