Pinshane Huang1,Kayla Nguyen1,2,Chia-Hao Lee1,Yi Jiang3,Yichao Zhang1,Priti Kharel1,Yue Zhang1,Arend van der Zande1
University of Illinois at Urbana-Champaign1,University of Oregon2,Argonne National Laboratory3
Pinshane Huang1,Kayla Nguyen1,2,Chia-Hao Lee1,Yi Jiang3,Yichao Zhang1,Priti Kharel1,Yue Zhang1,Arend van der Zande1
University of Illinois at Urbana-Champaign1,University of Oregon2,Argonne National Laboratory3
A challenge in the study of 2D moirés is that they are highly inhomogenous across length scales, containing defects and strains that vary from site-to-site. In addition, solving the atomic structure is challenging because atoms in the moiré are separated by sub-angstrom distances in projection images, thus requiring deep sub-angstrom spatial resolution. While electron ptychography has demonstrated access to the deep sub-angstrom regime, this technique has required expensive, delicate aberration-corrected electron microscopes. Here, we demonstrate sub-angstrom resolution electron ptychography of 2D materials in an uncorrected scanning transmission electron microscopy (STEM). We demonstrate the power and flexibility of electron ptychography by showing that it can achieve sub-angstrom resolution across a broad range of microscope conditions to uncover details of the moiré structure. Counterintuitively, we find that geometric aberrations actually benefit electron ptychography because they produce structured beams that are more dose-efficient for ptychography than focused, aberration-free probes. This work should dramatically expand the ability to study 2D moirés with atomic precision.