Dinh Loc Duong1,2,Lan-Anh T. Nguyen3,Jinbao Jiang4,Tuan Dung Nguyen3,Philip Kim5,Min-kyu Joo6,Young Hee Lee3
Department of Physics, Montana State University1,Montana State University2,Center for Integrated Nanostructure Physics, Institute for Basic Science3,National University of Defense Technology4,Harvard University5,Sookmyung Women's University6
Dinh Loc Duong1,2,Lan-Anh T. Nguyen3,Jinbao Jiang4,Tuan Dung Nguyen3,Philip Kim5,Min-kyu Joo6,Young Hee Lee3
Department of Physics, Montana State University1,Montana State University2,Center for Integrated Nanostructure Physics, Institute for Basic Science3,National University of Defense Technology4,Harvard University5,Sookmyung Women's University6
Vanadium-doped tungsten dichalcogenide (V-doped WSe<sub>2</sub>) reveals ferromagnetic order at room temperature, which can be controlled by a gate bias. In this presentation, we report electrically tunable magnetic fluctuations associated with RTNs in V-doped WSe<sub>2</sub> at a low doping concentration using vertical tunneling graphene/V-WSe<sub>2</sub>/graphene devices. We identify bistable magnetic states from discrete Gaussian peaks of the RTN histogram, which were further confirmed by 1/f<sup>2</sup> features in the noise power spectrum. Three fluctuation categories in the resistance change were detected: small changes from the intralayer coupling between magnetic domains at high temperatures, anomalous large resistance changes over a wide range of temperatures, and persistent large resistance changes originating from magnetic interlayer coupling at low temperatures. We demonstrate the switching of the bistable state and further modulate the cut-off frequency of RTNs with bias. The observed electrical switching of a tunable bistable state in magnetic 2D materials can be utilized for low-power spintronics.