Efficient and Stable Perovskite Light Emitting Diodes by using Stablized Interface

Metal halide perovskites have shown great optoelectronic properties for light emitting diodes (LEDs), such as high photoluminescence quantum yields (PLQYs), tunable bandgap, narrow emission linewidths and high charge-carrier mobility. Owing to the development of the strategy of defect passivation and controllable growth of grains, the external quantum efficiencies (EQEs) of perovskite light emitting diodes (PeLEDs) have achieved more than 25%. Furthermore, critical interface engineering has also been developed for fabricating PeLEDs with long operational stability, making a key step toward practical applications and future commercialization. We report an efficient PeLED with EQE > 24% in near infrared emission range by using organic additives. Owing to the stablized interface, the achieved devices present long term operational stability with T50 above 800 hours at current density of 20 mA/cm2. <quillbot-extension-portal></quillbot-extension-portal>