Edge-Contacted In-Plane Mixed-Dimensional Heterostructures from Monolayer MoS₂ and Low-Dimensional Mo/Te Compounds

Mixed-dimensional heterostructures formed by combining 2D materials and other dimensional (0D, 1D, and 3D) materials have attracted attention due to their hybrid structures. However, in-plane mixed-dimensional heterostructures have been rarely investigated. Here, we report a novel sequential chemical vapor deposition method for synthesizing in-plane mixed-dimensional heterostructures composed of monolayer MoS₂ and low-dimensional molybdenum/tellurium (Mo/Te) compounds. The composition, dimension, and phase of the Mo/Te compounds interfaced with the monolayer MoS₂ were determined by adjusting the Te flux and growth time. While in-plane 2D/1D MoS₂/Mo₆Te₆ and 2D/2D/1D MoS₂/2H MoTe₂/Mo₆Te₆ heterostructures were synthesized with a low Te flux, in-plane 2D/2D MoS₂/mixed 2H-1T’ MoTe₂ and 2D/2D MoS₂/2H MoTe₂ heterostructures were obtained with a high Te flux. We performed scanning photocurrent microscopy measurements for studying the transport properties and the electronic band structures of the devices fabricated with in-plane mixed-dimensional 2D/2D/1D MoS₂/2H MoTe₂/Mo₆Te₆ heterostructures. The composition-, dimension-, and phase-controlled synthesis method developed in this study will allow large-scale controlled fabrication of edge-contacted mixed-dimensional in-plane heterostructures.