Growth of Width-Controlled Single Atomic Layer TMD Nanoribbons

Controlling the width of single atomic layer transition metal dichalcogenides (TMDs) offers additional degree of freedoms for engineering their properties aiming applications in fields for next generations of optoelectronics, quantum computing, communication, and sensing. However, direct width-controlled synthesis of TMD nanoribbons, especially for the appealing width range below 30 nm, remains challenging. Therefore, developing facile methods for their direct and controllable synthesis is of central importance. We present a new growth method for single and double atomic layer of TMD nanoribbons with width down to sub-10 nm. Nanoribbons are grown via precipitation from the pre-deposited nanoparticles via vapor-liquid-solid mechanism in which the nanoparticle diameter also controls the width of nanoribbon. We also present the evolution of electrical and optical properties of the nanoribbons with their width reduction due to the corresponding dimension confinement and the results of their performance in the quantum electronics, particularly as a single electron transistor and single photon emitter.<br/><br/><b>References</b><br/>X. Li., et al. <i>ACS Nano</i><b> 14, </b>6570 (2020).<br/>X. Li., et al. <i>Sci. Adv.</i> 7 (50), eabk1892 (2021).