Recent Progress on 2D Transition-Metal Chalcogenide Semiconductor

Two-dimension (2D) transition-metal chalcogenides (TMCs) have recently provided a rich source of research opportunity, revealing interesting physical phenomena including quantum-spin Hall effect (QSH), valley polarization, 2D superconductivity. Among 2D TMCs, novel 2D semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics.<br/> <br/>I will introduce the potential of 2D materials to build a sustainable world in terms of novel electronic and optoelectronic devices. Various novel 2D TMC semicondcutors have been fabricated at the material level based on chemical vapor deposition and solid reaction methods. For example, air-stable 2D semiconductor PdPS and PdPSe with a tailored puckered structure is successfully designed and synthesized [1, 2]. At the device level, based on the 2D semiconductor and ferroelectric materials, we have demonstrated the negative capacitance field-effect transistors and memory, which may dramatically reduce energy consumption [3, 4]. I will also discuss our recent progress on machine learning guided materials synthesis and the novel design of neural networks hardware based on 2D materials [5, 6].<br/> <br/><b>References</b><br/>Duan R. H., et al. 2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance, Advanced Functional Materials 2113255, 2022.<br/>Duan R. H., et al. PdPSe: Component-Fusion-Based Topology Designer of Two-Dimensional Semiconductor, Advanced Functional Materials, 31, 2102943, 2021.<br/>Wang X. W., et al. Van der Waals engineering of ferroelectric heterostructures for long-retention memory, Nature Communications 12, 1109, 2021.<br/>Wang X. W., et al. Van der Waals negative capacitance transistors, Nature Communications 10, 3037, 2019.<br/>Tang B.J., et al. Machine learning-guided synthesis of advanced inorganic materials, Materials Today 41, 72, 2020.<br/>Chen J. G. et al. Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium Thiophosphate, Advanced Materials 2104676, 2021.