Large Scale Development of MoS₂ Circuitry for Flexible, Active Matrix X-Ray/Vis Light Detector

MoS₂ has been an attractive material over the years, having comparable carrier mobility with oxide TFT and much greater photo-responsivity than conventional Si photodiode. Furthermore, its unique atomic structure enables to develop flexible devices, in typically flexible photodetector. Despite its various favorable properties, only few successes of practical level studies in MoS₂ photodetector have been reported yet might be due to the difficulty of large-area, high-quality synthesis and gate dielectric constructions on it.<br/>Here, we show a flexible, active-matrix type photodetector implemented by MoS₂ circuitry that could operate for both visible light and X-ray. The MoS₂ photodetector exhibit about 10AW^-1 level of photoresponsivity that is almost 100 times larger than Si photodiode and integrated with the MoS₂ TFT having a large on/off ratio of ~ 10⁷ and mobility over 10 cm². 60 x 60 pixels in 3² cm² are enough to obtain spatial mapping through a target image. In addition, by bending it along the target feature it could effectively avoid vignetting effect in contrast to conventional rigid image sensors. Our study in flexible MoS₂ circuitry will motivate it to be achieved practical level development as well as flexible electronics.