Pierre Seneor1,Victor Zatko1,Marta Galbiati1,2,Hao Wei1,Frederic Brunnett1,Julian Peiro1,Regina Galceran1,Maëlis Piquemal-Banci1,Florian Godel1,Nicholas Figueiredo-Prestes1,Simon Dubois1,3,Jean-Christophe Charlier3,Piran Ravichandran Kidambi4,Robert Weatherup5,6,Sabina Caneva5,Stephan Hofmann5,John Robertson5,Mauro Och7,Cecilia Mattevi7,Aymeric Vecchiola1,Karim Bouzehouane1,Sophie Collin1,Bernard Servet8,Albert Fert1,Frédéric Petroff1,Marie-Blandine Martin1,Bruno Dlubak1
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay1,Universidad de Valencia2,Université Catholique de Louvain3,Vanderbilt University4,University of Cambridge5,University of Oxford6,Imperial College London7,Thales Research and Technology8
Pierre Seneor1,Victor Zatko1,Marta Galbiati1,2,Hao Wei1,Frederic Brunnett1,Julian Peiro1,Regina Galceran1,Maëlis Piquemal-Banci1,Florian Godel1,Nicholas Figueiredo-Prestes1,Simon Dubois1,3,Jean-Christophe Charlier3,Piran Ravichandran Kidambi4,Robert Weatherup5,6,Sabina Caneva5,Stephan Hofmann5,John Robertson5,Mauro Och7,Cecilia Mattevi7,Aymeric Vecchiola1,Karim Bouzehouane1,Sophie Collin1,Bernard Servet8,Albert Fert1,Frédéric Petroff1,Marie-Blandine Martin1,Bruno Dlubak1
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay1,Universidad de Valencia2,Université Catholique de Louvain3,Vanderbilt University4,University of Cambridge5,University of Oxford6,Imperial College London7,Thales Research and Technology8
Spin-based electronics has recently been highlighted as a main contender for new ultrafast and efficient embedded memories (MRAMs…) and post-CMOS approaches (spin logics, stochastic, neuromorphic and quantum computing). Beyond initial graphene properties for efficient spin transport, 2D materials have opened novel exciting opportunities in terms of functionalities and performances for spintronics devices ranging from gated control to topology. Here we will present experimental results on new outcomes arising from 2D materials integration and interface effects in the prototypical magnetic tunnel junctions (MTJ) spintronics device.<br/><br/>It has been shown that large-scale direct growth (first CVD [1] and now even PLD [2]) can enable the integration of graphene and other 2Ds into MTJs. Here, the 2Ds can enable spin filtering while preventing the oxidation of ferromagnet layers for spintronics[3].<br/>Here, in the light of previous effects, we will discuss with recent experiments how 2D materials interfaces with ferromagnets can add new enhanced spin filtering properties through either band structure filtering or hybridization/proximity effect (a.k.a. spinterface). Starting with graphene [4] we will then present results concerning other 2D materials beyond graphene (H-BN, TMDCs, and beyond…) for MTJs. For example, we will show how even an insulator material such as h-BN can become metallic and spin-polarized through hybridization with Fe or Co leading to strong spin signals and inversion of the spin polarization (with ab-initio calculations in support) [5]. We will also show how K-Q band filtering can lead to layer-dependent spin polarization reversal in TMDCs such as WS2 [6]. Overall we will show our most recent experiments making use of 2Ds highlighting fundamental interfacial spin polarization processes and unveiling a strong potential towards quantum engineering of 2D materials (Gr, SC, Ferro…) for spintronics.<br/><br/>References<br/><br/>[1] Dlubak et al. ACS Nano 6 (2012) 10930 ; Martin et al. ACS Nano 8 (2014) 7890 & Appl. Phys. Lett. 107 (2015) 012408.<br/>[2] Godel et al. ACS Applied Nano Materials. 3, (2020) 7908; Zatko et al. ACS Nano (2021)<br/>[3] <i>Review: </i>Piquemal-Banci et al. J. Phys. D 50 (2017) 203002.<br/>[4] Piquemal-Banci et al. Nat. Com. (2020)<br/>[5] Piquemal-Banci et al. Appl. Phys. Lett. 108 (2016) 102404 & ACS Nano 12 (2018) 4712.<br/>[6] Galbiati et al. Phys. Rev. Appl. 12 (2019) 044022 ; Zatko et al. ACS Nano 13 (2019) 14468.