Two-Dimensional Particle-in-Cell Simulation of an Inductively Coupled Source Coupled with a Capacitive Dual-Frequency Bias

A two-dimensional (2D) particle-in-cell (PIC) Monte Carlo collision (MCC) simulation has the advantage in investigating the bulk electron kinetics and the ion kinetics to the wafer. It is known that skin depth for electron heating and ion transport are important in forming plasma equilibrium in an inductively coupled plasma (ICP). The purpose of this study is to examine the effect of the capacitively coupled plasma (CCP) with dual-frequency (DF) RF bias on the ion flux and energy distribution while maintaining the plasma with ICP source. The 2D PIC simulation is parallelized using a graphics process unit to allow the expensive calculation to reach a steady state for the ICP + CCP combination within ten days. By adding a DF bias, the voltage ratio between the high-frequency and low-frequency drivers changes the ion flux and ion energy and angle distributions (IEADs). The phase-resolved analysis of the IEADs is provided for different voltage ratios.