Large Scale III-V Material Template Growth Directly on Metal for Device Application

Direct growth of single crystal III-V thin film on top of metal has been desired to design a dynamic tuning photonics device such as metal-insulator-metal (MIM) resonator, where the top metal layer is defined into a sub-wavelength resonator element and bottom metal layer as a reflector. In previous research, heavily doped layer was used to mimic the metal layer by using either metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), which is not only cost inefficient but having poor reflectivity. Here in this work, we have demonstrated InAs directly grown on metal, specifically on top of Mo and W to build a platform for the device application. The growth was carried at growth temperature of 300°C by low temperature templated liquid phase (LT-TLP) method. Unlike our previous grown templates on top of amorphous substrates, it is noteworthy that the size of the grown InAs area is over &gt; 80um domain size with various InAs thickness (from ~100 nm up to μm scale) by tuning the initial indium template thickness. This approach enables us to control the size of the grown crystalline, potentially can be used to grow single crystalline size up to <i>mm</i>scale by optimizing the growth conditions and processes, opening the new door to breakthrough the large area III-V thin film growth for device application.