Nicholas Glavin1
Air Force Research Laboratory1
Nicholas Glavin1
Air Force Research Laboratory1
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. This talk discusses a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures and superlattices of MoSe<sub>2</sub>/WSe<sub>2</sub> and MoS<sub>2</sub>/WS<sub>2</sub> through vapor-phase processing. The resulting heterostructures exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition.