Jie Shan1
Cornell University1
Semiconductor moiré materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals and continuous Mott transition, have been demonstrated. In this talk, I will discuss how to introduce band topology by applying an out-plane electric field in AB-stacked MoTe<sub>2</sub>/WSe<sub>2</sub> moiré heterobilayers. A quantum anomalous Hall (QAH) effect at half band filling (corresponding to one particle per moiré unit cell) is observed. I will discuss the nature of the QAH state based on transport and spectroscopy studies. Our results establish semiconductor moiré materials as a versatile system for exploring the rich phenomenology arising from the combined influence of strong correlation and topology.