Omer Caylan1,2,Furkan Turker1,Derya Karadeniz1,Tarik Can Turkoglu1,Deniz Cakir1,Goknur Cambaz Buke1
TOBB University of Economics and Technology1,Bilkent University2
Omer Caylan1,2,Furkan Turker1,Derya Karadeniz1,Tarik Can Turkoglu1,Deniz Cakir1,Goknur Cambaz Buke1
TOBB University of Economics and Technology1,Bilkent University2
Chemical vapor deposition is a promising technique to produce Mo<sub>2</sub>C crystals with large area, controlled thickness, and reduced defect density. We have studied the effects of CVD processing parameters (effect of catalyst, catalyst type and thickness, reaction temperature and duration) on the growth of 2D Mo<sub>2</sub>C crystals. SEM, EDS, Raman spectroscopy, XPS, TEM and XRD studies show that hexagonal Mo<sub>2</sub>C crystals, which are orthorhombic, grow along the [100] direction together with graphene an amorphous carbon thin film on Cu and In, respectively [1, 2, 3]. The activation energy for the growth of Mo<sub>2</sub>C on graphene was calculated to be 3.76 eV, and the diffusion of Mo to the Cu surface through uncovered Cu or graphene vacancies/defects was determined to be the rate-limiting step [2]. The growth mechanism is examined and discussed in detail, and a model is proposed. AFM studies agree well with the proposed model, showing that the vertical thickness of the Mo<sub>2</sub>C crystals decreases inversely with the thickness of catalyst (Cu or In) for a given reaction time [3]. This study is based on work supported by the Air Force Office of Scientific Research under Award Number FA9550-19-1-7048.