Area-Selective Chemical Vapor Polymerization—Multistage Growth and Temperature-Pressure Control of Deposition

Bottom-up strategies for precise allocation of ideal materials are critical for applications, including microchips and microfluidic bioanalytical lab-on-a-chip technologies. However, there is a problem with current bottom-up nanotechnology platforms for microchip manufacturing that features are often restricted based on engineering resolution, and are the result of templating or ablative strategies in which the features are cut or formed from larger features. To this extent, area selective deposition (ASD) is an appropriate strategy for overcoming this problem. In this work, it is shown that functionalized poly-p-xylylene species are capable of depositing selectively onto different substrates (Si, Cu) via Chemical Vapor Deposition (CVD) and that, through the use of surface behavior measurements, model previously reserved for PPX can be expanded to all functionalized PPX deposition on both good and poor substrates. We found that the area-selective property of functionalized PPX can be changed by deposition conditions, such as deposition temperature and working pressure, which confirmed by the deposition model. To assess these finding in an industrially relevant environment, area selective deposition is observed and characterized for template substrates expressing regions of both Si and Cu.