Giheon Choi1,2,Seungtaek Oh1,2,Jungyoon Seo1,2,Hwasung Lee1,2
Hanyang University1,BK21 FOUR ERICA-ACE Center, Hanyang University2
Giheon Choi1,2,Seungtaek Oh1,2,Jungyoon Seo1,2,Hwasung Lee1,2
Hanyang University1,BK21 FOUR ERICA-ACE Center, Hanyang University2
Organic field-effect transistors (OFETs) have gained lots of attention for a variety of potential applications over the past decades. However, despite the steadily rising charge carrier mobility, inefficient charge injection/extraction characteristics induced by high scale of contact resistance are considering as a bottleneck for practical use of OFETs. In this study, we showed a facile way to minimize the access resistance in OFETs by introducing the buried electrode (BE) structure through a pressure during thermal annealing process to polymer semiconductors. The additionally applied pressure in the thermal annealing process induces the reducing contact resistance by shortening the charge-transporting distance from electrode to the bulk organic semiconductor layer, resulting in the improved charge carrier mobility. As a result, the R<sub>C</sub> of BE structured FET is decreased from 166.1 to 65.4 kΩ compared to the pristine device. Moreover, charge carrier mobility of BE structured FET is increased from 0.026 to 0.061 cm<sup>2</sup>/Vs. Our results suggest a novel structure that easily achieves low contact resistance, leading to the practical use of short-channel OFETs.