Lukas Wolz1,Johanna Eichhorn1,Simon Lechner1,Chang-Ming Jiang1,Giulia Folchi-Heunecke1,Frans Munnik2,Ian Sharp1
Technische Universität München1,Helmholtz-Zentrum Dresden-Rossendorf2
Lukas Wolz1,Johanna Eichhorn1,Simon Lechner1,Chang-Ming Jiang1,Giulia Folchi-Heunecke1,Frans Munnik2,Ian Sharp1
Technische Universität München1,Helmholtz-Zentrum Dresden-Rossendorf2
For photoelectrochemical energy conversion, metal nitride semiconductors have the potential to overcome several limitations associated with the more intensively investigated class of metal oxides. Among these materials, Ta<sub>3</sub>N<sub>5</sub> is especially promising. However, it is commonly synthesized by nitridation of Ta<sub>2</sub>O<sub>5</sub> films in ammonia atmosphere at high temperatures, which results in high concentrations of residual oxygen, nitrogen vacancies, and low-valent Ta cations within the Ta<sub>3</sub>N<sub>5</sub> lattice. These defects often dominate the (opto)electronic properties of Ta<sub>3</sub>N<sub>5</sub> photoelectrodes, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport mechanisms. Here, we deposit tantalum nitride thin films by reactive magnetron sputtering and explore the role of subsequent NH<sub>3</sub> annealing.[1] This synthesis process leads to thin films with near-ideal stoichiometry, as well as significantly reduced native defect and oxygen impurity concentrations compared to the commonly used nitridation of Ta<sub>2</sub>O<sub>5</sub>. By analyzing structural, optical, and photoelectrochemical properties as a function of NH<sub>3</sub> annealing temperature, we provide new insights into the basic semiconductor properties of Ta<sub>3</sub>N<sub>5</sub>, as well as the role of defects on its optoelectronic characteristics. For example, the high material quality enables us to unambiguously identify the nature of the Ta<sub>3</sub>N<sub>5</sub> bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. Improved understanding of not only the basic properties of this material, but also of how defect concentrations can be optimized, provides a path to high efficiency photoelectrodes.<br/>[1] Eichhorn et al., J. Mater. Chem. A, 9, 20653 (2021)