Cubic Boron Nitride’s High-Field Electron Transport

Through the use of a semi-classical three-valley Monte Carlo electron transport simulation analysis, the character of the electron transport that occurs within the cubic phase of boron nitride is examined. For the purposes of this particular analysis, both steady-state and transient electron transport processes are examined. For the steady-state analysis, the dependence of the electron drift velocity on the applied electric field strength is examined. For the transient electron analysis, however, we study how an ensemble of electrons, initially in thermal equilibrium, i.e., zero-field, responds to the sudden application of a constant and uniform applied electric field. A critical comparison, of these electron transport results with those corresponding to a variety of other semiconductor materials, is offered. The device implications of these results are explored.