Quantum Interference Experiments on the Topological Insulator-Like Surface of Cadmium Arsenide

Recently, high-quality thin films of cadmium arsenide (Cd₃As₂) have emerged as a promising platform for the observation of quantum transport phenomena and the realization of new topological states. In this talk, we will first discuss the nature of the topological insulator-like states of thin (001) Cd₃As₂ films and the specific features of the “half-integer” quantum Hall effect arising from these states. Next, we will discuss several new measurements relevant for quantum information devices, including the prospects for proximitized superconductivity. We will also discuss electronic quantum interference experiments that are a key ingredient in several approaches for topological quantum information processing. For example, we will show results from nanoscale p-n junctions fabricated on thin films of Cd₃As₂, which are in a topological insulator-like state, and report on conductance oscillations under small magnetic fields. We discuss their origins and connection to the junction properties. Our results show that high-quality thin films of cadmium arsenide Cd₃As₂ hold great promise for a number of applications in quantum devices.