Amorphous BN Growth Using CVD and Measurement of RRAM Properties Using the Same

In this paper, a large array resistive memristor device was manufactured by adjusting the crystal properties of the film by<br/>adjusting the growth conditions. It is composed of Au/amourphous/Au as a two-terminal resistive switching device with a Metal/Insulator/Metal (MIM) vertical structure. Changes in the state, thickness and crystal structure of the film were analyzed by<br/>adjusting various growth conditions, and it can be seen that it has Boron Nitride characteristics through Raman spectrometers<br/>measurement and TEM image. When a voltage is applied to a non-conductive material, RRAM generates a filament through which ions can aggregate and current can flow, Similarly, RRAM with high electrical characteristics was implemented by adjusting growth conditions.