Two-Dimensional Field-Effect Heterostructures for Wearable and Textile Electronics

Solution processing of graphite and other layered materials provides low-cost stretchable inks enabling electronic textile devices [1]. However, the limited quality of the two-dimensional (2d) material inks, the complexity of the layered arrangement, and the lack of a suitable dielectric 2d material ink [2] has impeded the fabrication of active field effect devices on fabric based on fully-printed 2d heterostructures. In this talk I will demonstrate fully inkjet printed 2d material active heterostructures with graphene, MoS2 and hexagonal-boron nitride (h-BN) links (Fig 1a), and use them to fabricate all inkjet printed flexible and washable ambipolar, n- and p-type field effect transistors (FETs) on textile, reaching a field effect mobility of μ ~ 105 ± 29 cm2 V-1 s-1 on polyester fabric, at low operating voltages (&lt; 5 V) (Fig. 1b). The devices maintained their performance even under ∼ 4% tensile strain and showed stable operation for periods up to 2 years, indicating the two-fold role of the h-BN layer as a flexible dielectric and encapsulant. Finally, I will show how hybrid inkjet-printing of 2D and organic semiconducting inks enables all-printed complementary logic circuits [4] on rigid and flexible substrates. The viability of our process for printed and textile electronics is demonstrated by fully inkjet printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters, and OR logic gates with graphene/h-BN FETs.<br/>References<br/>[1] Torrisi, F. & Carey, T. Nano Today 23, 73 – 96 (2018).<br/>[2] Torrisi, F. & Carey, T.; Samori P. and Palermo, V. Eds., Wiley, Weinheim (2018).<br/>[3] Carey et al. Nature Commun, 8 1202, (2017).<br/>[4] Carey et al. Adv. Electron. Mater. (2021)