Strong Light-Matter Interactions in Low-Dimensional Excitonic Semiconductors

The isolation of stable atomically-thin two-dimensional (2D) crystals has led to a revolution in solid state physics and semiconductor device research over the past decade. A variety of other 2D materials (including semiconductors) with varying properties have been isolated raising the prospects for devices assembled by van der Waals forces.¹ Particularly, these van der Waals bonded semiconductors exhibit strong excitonic resonances and large optical dielectric constants as compared to bulk 3D semiconductors.<br/>I will focus this talk on our recent works in strong light-matter coupling in excitonic 2D semiconductors, namely chalcogenides of Mo and W. Visible spectrum band-gaps with strong excitonic absorption makes transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as attractive candidates for investigating strong light-matter interaction formation of hybrid states.^2-4 We will present our recent work on the fundamental physics of light trapping in multi-layer TMDCs when coupled to plasmonic substrates.⁵<br/>Then, I will show the extension of these results to superlattices of excitonic chalcogenides. These hybrid multilayers offer a unique opportunity to tailor the light-dispersion in the strong-coupling regime.⁶ We will discuss the physics of strong light-matter coupling and applications of these multilayers. If time permits, I will also present our recent work on scalable, localized quantum emitters from strained 2D semiconductors.⁷<br/>Our results highlight the vast opportunities available to tailor light-matter interactions⁸ and building practical devices with 2D semiconductors. I will conclude with a broad vision and prospects for 2D materials in the future of semiconductor electronics and opto-electronics<br/><br/><b>References:</b><br/>1. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. <i>ACS Nano </i><b>2014,</b> 8, (2), 1102–1120.<br/>2. Jariwala, D.; Davoyan, A. R.; Wong, J.; Atwater, H. A. <i>ACS Photonics </i><b>2017,</b> 4, 2692-2970.<br/>3. Brar, V. W.; Sherrott, M. C.; Jariwala, D. <i>Chemical Society Reviews </i><b>2018,</b> 47, (17), 6824-6844.<br/>4. Anantharaman, S. B.; Jo, K.; Jariwala, D. <i>ACS Nano </i><b>2021</b>.<br/>5. Zhang, H.; Abhiraman, B.; Zhang, Q.; Miao, J.; Jo, K.; Roccasecca, S.; Knight, M. W.; Davoyan, A. R.; Jariwala, D. <i>Nature Communications </i><b>2020,</b> 11, (1), 3552.<br/>6. Kumar, P.; Lynch, J.; Song, B.; Ling, H.; Barrera, F.; Zhang, H.; Anantharaman, S. B.; Digani, J.; Zhu, H.; Choudhury, T. H.; McAleese, C.; Wang, X.; Conran, B. R.; Whear, O.; Motala, M.; Snure, M.; Muratore, C.; Redwing, J. M.; Glavin, N.; Stach, E. A.; Davoyan, A. R.; Jariwala, D. <i>Nature nanotechnology </i><b>2022,</b> 17 182–189.<br/>7. Kim, G.; Kim, H. M.; Kumar, P.; Rahaman, M.; Stevens, C. E.; Jeon, J.; Jo, K.; Kim, K.-H.; Trainor, N.; Zhu, H.; Sohn, B.-H.; Stach, E. A.; Hendrickson, J. R.; Glavin, N.; Suh, J.; Redwing, J. M.; Jariwala, D. <i>ACS Nano </i><b>2022,</b> 10.1021/acsnano.2c02974.<br/>8. Zhang, H.; Ni, Z.; Stevens, C. E.; Bai, A.; Peiris, F.; Hendrickson, J. R.; Wu, L.; Jariwala, D. <i>Nature Photonics </i><b>2022,</b> 16, 311-317.<br/>&lt;!--![endif]----&gt;