MRS Meetings and Events

 

CH01.06.06 2022 MRS Fall Meeting

Reversible Conversion Between Schottky and Ohmic Contact of Zinc Oxide Microwire-Based Device

When and Where

Nov 30, 2022
4:15pm - 4:30pm

Hynes, Level 1, Room 102

Presenter

Co-Author(s)

Hue Tran1,Yugyeong Je1,Hyunjeong Jeong1,Sang Wook Lee1

Ewha Womans University1

Abstract

Hue Tran1,Yugyeong Je1,Hyunjeong Jeong1,Sang Wook Lee1

Ewha Womans University1
In this study, electromechanical responses of individual ZnO microwires were observed under optical microscopy. In situ electrical measurements and the mechanical manipulation of ZnO microwires were carried out using a homemade micro-manipulation system. Here, the energy barrier height is tuned by inducing piezoelectric polarization charges at the local metal-semiconductor interface when a mechanical deformation was applied to ZnO microwire. As a result, the metal-semiconductor local contact can be transformed from Schottky to Ohmic and vice versa. This work demonstrates a method for controlling the electrical properties of ZnO nanowires to achieve reversible tuning between the Schottky contact and Ohmic contact on one device, which could be potential in developing multifunctional and Ohmic/Schottky-based sensors, switches, rectifiers, and other functional electronic devices.

Keywords

electrical properties | in situ

Symposium Organizers

Dongsheng Li, Pacific Northwest National Laboratory
Qian Chen, University of Illinois at Urbana-Champaign
Yu Han, King Abdullah University of Science and Technology
Barnaby Levin, Direct Electron LP

Symposium Support

Bronze
King Abdullah University of Science and Technology
MilliporeSigma

Publishing Alliance

MRS publishes with Springer Nature