Anion Vacancy Defect Passivation of 2D-Layered Tin-based Perovskite Thin-Film Transistor

Organic-inorganic hybrid perovskites have been intensively investigated for solar cells, optoelectronics and electronic applications with its high light absorption, defect tolerance, and high carrier mobility. Moreover, the hybrid perovskites offer the mechanical flexibility and solution processability. However, it is still challenging to achieve a reliable operation of electronic devices due to ion migration, which may lead to poor field-effect mobility with large current-voltage hysteresis. Such ion migration in perovskite films causes a screening of the applied electric field and thereby adversely impacts the device performance. In this research, we focused on using lead-free tin-based perovskites as the semiconductor in thin-film transistors (TFTs). we introduced anion vacancy suppressing additives in the perovskite precursor to passivate defects at the grain boundaries, thereby improving transistor characteristics. This work provides an effective way to achieve the high-performance in organic-inorganic hybrid perovskite TFT devices.