Magnetization Switching and Reading in Magnetoeletric Spin-Orbit Nanodevices at Room Temperature

In recent years, voltage and frequency scaling of CMOS technology has slowed down, accompanied by increasingly larger power requirements. To assure the continuity of Moore’s Law, new beyond-CMOS logic devices need to be found. For this purpose, one of the leading options is the magneto-electric spin-orbit (MESO) logic device, where a combination of quantum materials and spin-based phenomena allows for energy-efficient logic and favourable device scaling [1, 2].<br/><br/>Here, based on the initial MESO proposal, we show voltage-based magnetization switching and reading at room temperature, in Pt/CoFe nanodevices fabricated on a multiferroic BiFeO3 layer [3, 4]. Switching is performed by application of a voltage pulse to the BiFeO3, which reverses its ferroelectric and antiferromagnetic state. Through interfacial exchange coupling, the CoFe magnetization is also reversed. Spin-to-charge conversion in the Pt/CoFe nanodevice is then used to probe the magnetization direction of the CoFe element. Additionally, we show PFM and MFM experiments where magnetization switching is imaged after each voltage pulsed applied. We discuss future strategies that need to be followed for the implementation of MESO-based logic circuits [4].<br/><br/>[1] S. Manipatruni et al., Nature 565, 35-42, 2019.<br/>[2] H. Liu et al., IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5, 1-9, 2019.<br/>[3] C. -C. Lin et al., IEEE International Electron Devices Meeting (IEDM), 37.3.1-37.3.4, 2019.<br/>[4] D. C. Vaz et al., IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4, 2021.