Layered Chalcogenide Materials for Phase-Change Memory and Novel Applications

Te-based chalcogenides are the key for the phase-change memory technology. The conventional phase-change memory relies on a reversible change between amorphous and polycrystalline phases. Recently, for the further improvement of memory performance, heterogeneously structured phase-change materials have been attracted attention. In fact, most conventional phase-change materials such as Sb₂Te₃ and Ge₂Sb₂Te₅ crystallize into a layered structure. Therefore, realization of reversible change between amorphous and highly oriented crystalline phases could have a potential to overcome conventional polycrystalline-based materials. In this talk, some examples of layered chalcogenides will be given with respect to fabrication, function, and novel applications.