Forming-Free Interface-Type Memristors

Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides have been widely used as resistive switching materials in memristors. Defects such as oxygen vacancy and interface play critical roles in filamentary-type resistive switching (RS) devices. In this talk, I will discuss the role of defects such as oxygen vacancy and cation deficiency, mosture, and interface on switching behavior in forming-free memristors.