Rational Design of Redoxed-Based Memristive Devices for Novel Computing Paradigm

Memristive devices have been a hot topic in nanoelectronics for the last two decades in both academia and industry. Originally proposed as digital (binary) non-volatile random access memories, research in this field was predominantly driven by the search for higher performance solid-state drive technologies (e.g., Flash replacement) or higher density memories (storage class memory). However, based on their large dynamic range in resistance with analog tunability along with complex switching dynamics, memristive devices enable revolutionary novel functions and computing paradigms. In this talk, we will present the current knowledge about the switching and failure mechanisms in different variants of redox-based memristive elements. In particular, we will show direct experimental evidence of the redox-processes gained by <i>in-operando</i> spectroscopy and microscopy. Using the quantitative numbers gained from these experiments as input for existing simulations offers a route to less empirical and more predictive models for memristive devices. Based on the microscopic understanding gained from <i>operando</i> spectroscopy and modelling, we will show approaches for rational design of material stacks with tailored properties for novel computing paradigm.