SnS₂ Quantum Dots Decorated on Monolayer MoS₂ for High Performance Broadband Photodetector

Two-dimensional (2D) materials have great optical and electronic properties, which make them excellent for photodetectors and give them a lot of potential uses. Even if there are several approaches to increase the photodetector's responsivity, the electromagnetic spectrum's limited photodetection spectral range is the primary issue limiting the performance of photodetectors. Quantum dots (QDs) of tin sulfide (SnS2) are wide band gap semiconductors in the ultraviolet and visible spectrums; they display a high optical absorption coefficient and considerable photoconductivity. In addition, recent research reveals that due to their surface effects and quantum confinement, QDs have excellent local photon trapping capabilities, making them ideal light absorbers that increase the performance of photodetectors combining with them 2D materials. In this study, a 0D/2D SnS2-QDs/monolayer MoS2 hybrid for high-performing and wideband (UV, VIS, and NIR) photodetection is created. Utilizing chemical vapor deposition (CVD), monolayer MoS2 is formed on SiO2/Si, and SnS2-QDs are spin-coated processes made using an inexpensive solution process. The increasing 0D/2D MoS2-SnS2 photodetector device performance may be attributed to the band bending and built-in potential formed at the junction of SnS2-QDs and MoS2, which increases the booster and parting efficacy of the photoexcited charge carriers. The mixed-dimensional construction also reduces the photodetector's dark current. The decorated SnS2-QDs on monolayer MoS2 not only enhance the device's performance but also expand its spectral range into the ultraviolet zone. The UV, Visible, and NIR photoresponsivity of the device are 280 A/W, 450 A/W, and 180 A/W, respectively. Due to the high absorbance of a single layer of MoS2, the devices' highest responsivity was seen in the visible spectrum. The measured reaction time of the fabricated device is 80 milliseconds fast response time. The implementation of the 0D–2D mixed-dimensional heterostructures presented here will expand the design space for next-generation optoelectronic applications, as demonstrated by our results.