Symposium K—Surface Interface and Stress Effects in Electronic Material Nanostructures

Chairs

S. M. Prokes, Naval Research Laboratory
K.L. Wang, University of California, Los Angeles
R. C. Cammarata, The Johns Hopkins University
A. Christou, University of Maryland

Symposium Support

Brookhaven Instruments Corporation

Tutorial:FTK: Effects of Strain on the Electronic and Vibrational Properties of Semiconductors and Semiconductor Microstructures

Instructor: Fred H. Pollak, Brooklyn College of CUNY
Monday, November 27, 8:30 a.m. - 12:00 p.m.
Essex N.C. (W)

• Deformation Potential Theory
  • Electronic States
  • Bands near =0; Eo transition
  • Hydrostatic and shear effects on the conduction and valence bands; hydrostatic and shear deformation potentials
  • Uniaxial and biaxial stresses
  • Heavy-and light-hole masses
  • Polarization effects
  • Exciton effects
  • Bands at != 0
  • Indirect transitions: -[[Delta]] (Si, GaP, AlAs, AlSb), -L (Ge)
  • Direct transitions: E1, E1 + [[Delta]]1
  •  Vibrational states at ~0
  • Diamond-type semiconductors
  • Zincblende-type Semiconductors
  • Polarization effects
• Quantum States
  • Competition between strain and quantum confinement effects
  • Strain-induced heterjunction band alignments
  • Strain-induced mass modifications; in-plane and out-plane heavy-and light-hole like mases
  • Polarization effects
  • Strain and zone-folding effects in ultrashort superlattices
  • Piezoelectic effects
  • Strain relaxation
• Measurement Techniques
  
  • *Photoluminescence, photoluminescence excitation spectroscopy, cathodoluminescence, absorption
  • Modulation spectroscopy
  • Novel Opto-electronic Devices
  • Variable-strain InGaAs/GaAs quantum well structure
  • Strain-induced tuning of light-and heavy-holes for optical modulators and infrared detectors

During the past decade there has been considerable interest in the effects of strain, whether controlled or unwanted, on the properties of semiconductors/semiconductor microstructures. Such a strain can create significant alterations in the electronic band structure and vibrational modes of the system. For the electronic states energy gaps and effective masses are influenced and in some instances degeneracies are removed. Controlled strain can be an extremely powerful tool for modifying the band structure of these materials in a useful and predictable fashion to produce new phenomenon and devices. This talk will review deformation potential theory for electronic states (=0 and =o) and vibrational modes (~0) of bulk material, piezoelectric effect, the influence on quantum states (band offsets, light- and heavy-hole splittings, polarization effects, etc.) process-induced strain, stressors to form quantum wires, etc. Specific examples of each phenomenon will be given, including some new and novel applications. Also various measurement techniques such as photoluminescence, photoluminescence excitation, spectroscopy, modulation spectroscopy, spectral ellipsometry, Raman scattering, X-rays, TEM, near field scanning optical microscopy, etc. will be discussed.

*Invited Paper

SESSION K1: NANOSTRUCTURE FORMATION: GROWTH
Chair: Jan Vanhellement
Monday Afternoon, November 27
Essex North Center (W)

1:30 P.M. *K1.1
STRESS EFFECTS IN STRANSKI-KRASTANOV THIN FILM GROWTH TRANSITIONS, Karl Sieradzki, Arizona State University, Tempe, AZ.


2:00 P.M. K1.2
OPTICAL PROPERTIES OF InAs/GaAs MONOLAYER AND SUBMONOLAYER QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY, C.A. Tran, S.P. Watkins, Simon Fraser University, Department of Physics, Burnaby, Canada; and R. Leonelli, University of Montreal, Department of Physics, Montreal, Canada.

2:15 P.M. K1.3
DESORPTION AND SEGREGATION OF INDIUM AND ITS DEPENDENCE ON SURFACE AS-COVERAGE, M.J. Ekenstedt, H. Yamaguchi and Y. Horikoshi, NTT, Basic Research Laboratories, Kanagawa, Japan.

2:30 P.M. K1.4
THERMAL STABILITY OF GaAs/InGaP/(In)GaAs INTERFACES, Fumiaki Hyuga, Takumi Nittono, Kazuo Watanabe and Tomofumi Furuta, NTT LSI Laboratories, Kanagawa, Japan.

2:45 P.M. K1.5
UNIAXIAL STRESS APPLIED TO p-TYPE GaAs/AlGaAs HETEROSTRUCTURES: INFLUENCE ON HEAVY HOLE SUBBANDS, Ole P. Hansen, Janus S. Olsen, University of Copenhagen, Niels Bohr Institute, Copenhagen, Denmark; W. Kraak and B. Saffian, Humboldt University, Berlin, Germany; N. Minina and A. Savin, Moscow State University, Moscow, Russia.

3:00 P.M. BREAK

SESSION K2: GROWTH INDUCED STRAIN EFFECTS
Chair: K. Sieradzki
Monday Afternoon, November 27
Essex North Center (W)

3:30 P.M. *K2.1
INTERFACIAL STUDIES OF NANOSCALE CRYSTALLIZATION IN ELECTRONIC MATERIALS, C. Hayzelden, Harvard University, Division of Applied Sciences, Cambridge, MA; and J. L. Batstone, IBM T.J. Watson Research Center, Yorktown Heights, NY.

4:00 P.M. K2.2
MBE GROWTH OF PSEUDOMORPHIC Ge1-yCy ALLOY LAYERS ON Si, K. Brunner, K. Eberl, W. Winter, MPI-FKF, Stuttgart, Germany; and E. Bugiel, IHP Frankfurt/Oder, Germany.

4:15 P.M. K2.3
CxSi1-x-yGEy FOR SILICON-BASED HETEROJUNCTION NANO STRUCTURE DEVICES, Marcy Berding, M. van Schilfgaarde and A. Sher, SRI International, Physical Electronics Laboratory, Menlo Park, CA.

4:30 P.M. K2.4
UNIAXIAL STRESS INDUCED PHOTOLUMINESCENCE SHIFTS IN MBE AND UHVCVD SiGe QUANTUM WELLS ON Si(001), D.C. Houghton, N.L. Rowell, G. Aers and H. Lafontaine, National Research Council of Canada, Ottawa, Canada.

4:45 P.M. K2.5
ANISOTROPY OF NEGATIVE MAGNETORESISTANCE AND CONDUCTIVITY IN THE DELTA-DOPED BY Sn ON VICINAL SUBSTRATE GaAs STRUCTURES, V.A. Kulbachinskii and V.G. Kytin, Moscow Lomonosov State University, Low Temperature Physics Department, Moscow, Russia.

SESSION K3: OPTICAL BEHAVIOR OF POROUS SILICON
Chair : S.M. Prokes
Tuesday Morning, November 28
Essex North Center (W)

9:00 A.M. *K3.1
LOCALIZATION PHENOMENA AND PHOTOLUMINESCENCE IN nc-Si AND nc-Si/a-SiO2 COMPOSITES, S. Veprek, Th. Wirschem and M. Rückschloss, Technical University Munich, Institute for Chemistry of Information Recording, Garching, Germany.

9:30 A.M. K3.2
ELECTRONIC PROPERTIES OF POROUS SILICON DERIVED FROM THE DIELECTRIC FUNCTION, U. Rossow, North Carolina State University, Phys. Department, Raleigh, NC; U. Frotscher, TU Berlin, Phys. Department, Berlin, Germany; D.E. Aspnes, North Carolina State University, Phys. Department, Raleigh, NC; and W. Richter, TU Berlin, Phys. Department, Berlin, Germany.

9:45 A.M. K3.3
LINEAR POLARIZATION OF POROUS Si PHOTOLUMINESCENCE, D. Kovalev, M.Ben Chorin, J. Diener, F. Koch, Technische Universität München, Physik Department, Garching, Germany; Al. L. Efros, M. Rosen, Naval Research Laboratory, Beam Theory Section, Washington, DC; N.A. Gippius and S.G. Tikhodeev, Russian Academy of Sciences, General Physics Institute, Moscow, Russia.10:00 A.M. BREAK

SESSION K4: POROUS SILICON: SURFACE
AND LUMINESCENCE
Chair: Stan Veprek
Tuesday Morning, November 28
Essex North Center (W)

10:30 A.M. K4.1
THE CHARACTERIZATION OF THE SILICON CRYSTAL OF THE VISIBLE LIGHT-EMITTING POROUS SILICON, Yongdong Zhou, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China; Yixin Jin and Yongqiang Ning, Changchun Institute of Physics, Chinese Academy of Sciences, Changchun, China.

10:45 A.M. K4.2
OXYGEN RELATED DEFECT CENTER RED ROOM TEMPERATURE PHOTOLUMINESCENCE IN ASMDE AND OXIDIZED POROUS SILICON, S.M. Prokes and W.E. Carlos, Naval Research Laboratory, Washington, DC.

11:00 A.M. K4.3
COMPOSITION OF SURFACE LAYERS IN POROUS SILICON OBTAINED BY WET ELECTROCHEMICAL ETCHING, V.M. Kashkarov, E.A. Tutov and V.A. Terekhov, Department of Physics, Voronezh State University, Voronezh, Russia.

11:15 A.M. K4.4
SiOx RELATED PHOTOLUMINESCENCE EXCITATION IN POROUS SILICON, T.V. Torchinskaya, N.E. Korsunskaya, B. Dzumaev, M.K. Sheinkman, Institute of Semiconductor Physics, Ukranian Academy of Science, Kiev, Ukraine; and H.J. von Bardeleben, Universites Paris 6&7, Groupe de Physique des Solides, Paris, France.

11:30 A.M. K4.5
HYDROGEN EFFUSION IN LIGHT-EMITTING POROUS SILICON, D. Wayne Cooke, P. Tiwari, T.N. Taylor, J.L. Smith, J.F. Smith, W.L. Hults, E.H. Farnum and B.L. Bennett, Los Alamos National Laboratory, Los Alamos, NM.

11:45 A.M. K4.6
IMPACT OF G-IRRADIATION ON PHOTOLUMINESCENCE OF POROUS SILICON, E.V. Astrova, V.V. Emtsev, A.A. Lebedev, D.I. Poloskin, A.D. Remenyuk, Yu.V. Rud' and R.F. Vitman, Ioffe Physical-Technical Institute, Power Device Department, St. Petersburg, Russia.

SESSION K5: POROUS SILICON: FORMATION
Chair: San Veprek
Tuesday Afternoon, November 28
Essex North Center (W)

1:30 P.M. K5.1
MICROSTRUCTURAL INVESTIGATION OF POROUS SILICON DEPTH PROFILE INVESTIGATION BY DIRECT SURFACE FORCE MICROSCOPY ETCHING, D.C. Chang, V. Baranauskas, I. Doi, State University of Campinas, Semiconductors Instruments and Photonics Department, Faculty of Electrical Engineering, Campinas, Brazil; and T. Prohaska, Vienna University of Technology, Institute of Analytical Chemistry, Vienna, Austria.

1:45 P.M. K5.2
PORE SIZE DISTRIBUTION AND SURFACE OF POROUS SILICON FORMED IN p-Si, O. Tiouline, I. Baranov, L. Tabulina and S. Lazarouk, Belarusian State University of Informatics and Radioelectronics, Department of Microelectronics, Minsk, Belarus.

2:00 P.M. K5.3
FORMATION OF INTENSIVE PHOTOLUMINESCENCE IN POROUS SILICON, V.A. Makara, M.S. Boltovets, O.V. Vakulenko, O.I. Datsenko and O.V. Rudenko, Shevchenko Kiev University, Department of Physics, Kiev, Ukraine.

2:15 P.M. K5.4
FEMTOSECOND NONLINEAR TRANSMISSION STUDY OF FREE-STANDING POROUS SILICON FILMS, Victor I. Klimov, Duncan McBranch, Los Alamos National Laboratory, Chemical Sciences and Technology Division, Los Alamos, NM; and Vladimir A. Karavanskii, Institute of General Physics, Moscow, Russia.

2:30 P.M. BREAK

SESSION K6: STRESS EFFECTS IN
FABRICATED NANOSTRUCTURES
Chair: P. Shen
Tuesday Afternoon, November 28
Essex North Center (W)

3:00 P.M. *K6.1
DAMAGE, STRAIN AND QUANTUM CONFINEMENT ISSUES IN DRY ETCHED SEMICONDUCTOR NANOSTRUCTURES, Y.S. Tang and C.M. Sotomayor Torres, University of Glasgow, Department of Electronics and Electrical Engineering, Glasgow, United Kingdom.

3:30 P.M. K6.2
STRAIN MEASUREMENT IN TWO-DIMENSIONAL NANOSCALE Si GRATINGS BY HIGH RESOLUTION X-RAY DIFFRACTION, S. Tanaka, C.C. Umbach, Q. Shen and J.M. Blakely, Cornell University, Ithaca, NY.

3:45 P.M. K6.3
STRAIN EFFECTS IN CdTe/CdZnTe NANOSTRUCTURES FABRICATED BY NANOLITHOGRAPHY AND CLEAVED-EDGE OVERGROWTH, C. Gourgon, H. Mariette, Le Si Dang, Université J. Fourier, Spectrométrie Physique, Grenoble, France; and C. Vieu, CNRS-Bagneux, France.

4:00 P.M. K6.4
FABRICATION OF NOVEL II-N AND III-V MODULATOR STRUCTURES BY ECR PLASMA ETCHING, S.J. Pearton, C.R. Abernathy, J.D. Mackenzie, J.R. Mileham, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; R.J. Shul, S.P. Kilcoyne, M. Hagerott-Crawford, Sandia National Laboratories, Albuquerque, NM; F. Ren, W.S. Hobson, AT&T Bell Laboratories, Murray Hill, NJ; and J.M. Zavada, US Army Research Laboratories, RTP, NC.

4:15 P.M. K6.5
STRESS DISTRIBUTIONS IN FREE STANDING QUANTUM WELL DOTS AND WIRES, N.A. Gippius and S.G. Tikhodeev, Russian Academy of Sciences, General Physics Institute, Moscow, Russia; R. Stephen and A. Forchel, Universität Würzburg, Technische Physik, Würzburg, Germany.

4:30 P.M. K6.6
SHAPE, INTERFACE, AND STARK EFFECTS ON BAND GAP AND SURFACE PHONONS OF SEMICONDUCTOR QUANTUM DOTS IN DIELECTRIC HOST, R. Mu, Y.-S. Tung, A. Ueda, D.O. Henderson, Fisk University, Department of Physics, Nashville, TN; C.W. White, R. A. Zuhr and Jane G. Zhu, Oak Ridge National Laboratory, Oak Ridge, TN.

4:45 P.M. K6.7
THREE-DIMENSIONAL EPITAXY: THE THERMODYNAMIC STABILITY RANGE OF COHERENT GERMANIUM NANOCRYSTALLITES IN SILICON MATRICES, Shuba Balasubramanian, K.D. Kolenbrander and Gerbrand Ceder, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

SESSION K7: POSTER SESSION
Tuesday Evening, November 28
8:00 P.M.
America Ballroom (W)

K7.1 REDUCTION OF LATERAL DIMENSION IN InGaAs/GaAs MULTILAYERS ON NON-(111) V-GROOVED GaAs(100) SUBSTRATE BY CHEMICAL BEAM EPITAXY, Sung-Bock Kim, Jeong-Rae Ro, ETRI, Research Department, Taejon, Korea; Seong-Ju Park, Kwangju Institute of Science and Technology, Department of Materials Science and Engineering, Kwangju, Korea; and El-Hang Lee, ETRI, Research Department, Taejon, Korea.

K7.2 FACET EVOLUTION OF GaAs/AlAs RIDGE STRUCTURE GROWN BY GROWTH-INTERRUPTED CHEMICAL BEAM EPITAXY USING UNPRECRACKED MONOETHYLARSINE, Jeong-Rae Ro, Sung-Bock Kim, Seong-Ju Park and El-Hang Lee, ETRI, Basic Research Department, Taejon, Korea; and Jihwa Lee, Seoul National University, Seoul, Korea.

K7.3 HIGH QUALITY OF AlGaAs REGROWN ON AlGaAs BY METALORGANIC CHEMICAL VAPOR DEPOSITION, Kun-Jing Lee and J.C. Chen, University of Maryland, Baltimore County, Department of Electrical Engineering, Baltimore, MD.

K7.4 SPECTROSCOPY OF STRAINED GaSb/AlSb SUPERLATTICES, Yu.A. Pusep, S.W. da Silva, J.C. Galzerani, Universidade Federal de São Carlos, São Carlos, Brazil; A.G. Milekhin, Institute of SEmiconductor Physics, Novosibirsk, Russia; D.I. Lubyshev and P. Basmaji, Universidade de São Paulo, Instituto de Física de São Carlos, São Carlo, Brazil.

K7.5 INTERFACE STUDY OF AlInP/GaAs MULTIPLE QUANTUM WELLS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY, Y.C. Wang, Rutgers University, Department of Materials Science and Engineering, Piscataway, NJ, and AT&T Bell Laboratories, Murray Hill, NJ; J.M. Kuo, AT&T Bell Laboratories, Murray Hill, NJ; H.C. Kuo, AT&T Bell Laboratories, Murray Hill, NJ, and Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; J.Y. Cheng, AT&T Bell Laboratories, Murray Hill, NJ; W.E. Mayo, Rutgers University, Department of Materials Science and Engineering, Piscataway, NJ; and Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ.

K7.6 THEORETICAL AND EXPERIMENTAL STUDY OF THE USE OF QUANTUM-WELL SUPERLATTICES TO INCREASE THE THERMOELECTRIC FIGURE OF MERIT, L.D. Hicks, M.S. Dresselhaus, Massachusetts Institute of Technology, Cambridge, MA; and T.C. Harman, Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA.


K7.7 DETERMINATION OF BULK STRAIN VALUES IN HETEROSTRUCTURES BY TEM/CBED, A. Armigliato and R. Balboni, CNR-Istituto LAMEL, Bologna, Italy.

K7.8 PHOTOVOLTAIC PROPERTIES OF POROUS SILICON HETEROJUNCTIONS, D. Dimova-Malinovska, M. Kamenova, Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria; and D. Nesheva, Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, Bulgaria.

K7.9 ABSORPTION AND PHOTOLUMINESCENCE OF FREE STANDING POROUS SILICON, E.V. Astrova, A.A. Lebedev, A.D. Remenyuk and Yu.V. Rud', Ioffe Physical-Technical Institute, Power Device Department, St. Petersburg, Russia.

K7.10 SCANNING PROBE MICROSCOPY STUDY OF POROUS SILICON, D. Schwall, G.B. Amisola, F.A. Otter and J.M. Galligan, University of Connecticut, Institute of Materials Science, Storrs, CT.

K7.11 PREPARATION OF POROUS SILICON USING ANODIZING AND SUPERCRITICAL DRYING, Guo Guolin, Xu Dongshon, Gui Linlin, Tang Youchi, Peking University, Department of Chemistry, Beijing, China; Ma Shuyi, Lin Jun, Zhang Lidong and Qin Guogang, Peking University, Department of Physics, Beijing, China.

K7.12 REGULAR STRUCTURES ON POROUS SILICON FORMED BY UV LASER PROCESSING, A.V. Alexeev-Popov, S.A. Gevelyuk, Ya.O. Roizin, L.P. Prokopovich and D.P. Savin, Odessa State University, Odessa, Ukraine.

K7.13 PHOTOLUMINESCENCE PROPERTIES OF Er-DOPED POROUS SILICON, U. Hömmerich, Hampton University, Research Center for Optical Physics, Hampton, VA; Freydoon Namavar, A.M. Cremins, Spire Corporation, Bedford, MA; and K.L. Bray, University of Wisconson-Madison, Department of Chemical Engineering, Madison, WI.

K7.14 RESTORATION OF POROUS Si LUMINESCENCE IN WATER VAPOUR, Mikhail S. Brodin, Valery N. Bykov, Dmitrii B. Dan'ko, Rostislav D. Fedorovich, Adam A. Kipen, Oleg E. Kiyayev and Nikolai I. Yanushevskii, Institute of Physics UNAS, Department of Physical Electronics, Kiev, Ukraine.

K7.15 HIGHLY SENSITIVE PHOTODETECTOR ON THE BASIS OF POROUS SILICON, N.A. Rud., A.S. Rudy and A.N. Laptev, Yaroslavl State University, Yaroslavl, Russia.

K7.16 VISIBLE PHOTOLUMINESCENCE FROM SILICON NANO-CRYSTALLITES AND RELATED MATERIALS: A THREE-REGION MODEL, Y. Kanemitsu, University of Tsukuba, Institute of Physics, Ibaraki, Japan.

K7.17 ELECTRICAL AND OPTICAL CHARACTERIZATION OF Si NANOCRYSTALS EMBEDDED IN AN SiOx MATRIX, C.R. Gorla, S. Liang, Y. Lu, W.E. Mayo, Rutgers University, Department of Mechanics and Materials Science, Piscataway, NJ; and G.S. Tompa, Structured Materials Industries, Piscataway, NJ.

K7.18 CARRIER TRANSPORT IN SILICON NANOCRYSTALLITE-BASED MULTILAYER ELECTROLUMINESCENT DEVICES, T.A. Burr and K.D. Kolenbrander, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

K7.19 ON THE OPTICAL PROPERTIES OF SIZE CLASSIFIED SILICON NANOCRYSTALS, R.P. Camata, H.A. Atwater, K.J. Vahala, Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA; and R.C. Flagan, California Institute of Technology, Department of Chemical Engineering, Pasadena, CA.

K7.20 PHOTOLUMINESCENCE FROM Er:O-NANOCRYSTALLITES EMBEDDED IN A SILICON MATRIX, A. Thilderkvist, S. Ahn, J. Michel, S. Ngiam, K.D. Kolenbrander and L.C. Kimerling, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

K7.21 DEPENDENCE OF ELECTRICAL AND OPTICAL PROPERTIES ON THE STRUCTURE AND CHEMISTRY OF SILICON NANOCRYSTALS EMBEDDED IN A SiOx FILM, C.R. Gorla, W.E. Mayo, Rutgers University, Department of Materials Science, Piscataway, NJ; Y. Lu, S. Liang, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; and G.S. Tompa, Structured Materials Industries, Piscataway, NJ.

K7.22 STM CHARACTERIZATION OF Si AND Ge CLUSTERS ON ORDERED C60 OVERLAYERS, Dimitri Klyachko and Dongmin Chen, The Rowland Institute for Science, Cambridge, MA.

K7.23 CHARACTERIZATION OF MOS STRUCTURES WITH ULTRA-THIN TUNNELING OXYNITRIDE, Hiroshi Fujioka, Hsing-jen Wann, Donggun Park and Chenming Hu, University of California at Berkeley, Department of Electrical Engineering and Computer Science, Berkeley, CA.

K7.24 SURFACE EFFECTS IN SILICON DOPING WITH BORON DURING PROXIMITY RAPID THERMAL DIFFUSION, S. Mone and W. Zagozdzon-Wosik, University of Houston, Department of Electrical and Computer Engineering, Houston, TX.

K7.25 STRUCTURAL AND OPTICAL PROPERTIES OF TRANSLUCENT ZnS AND ZnSe NANOCRYSTALLITE THIN FILMS, Adriaan C. Carter and Michael I. Bell, Naval Research Laboratory, Condensed Matter and Radiation Sciences, Washington, DC.

K7.26 ULTRAFAST BLEACHING DUE TO SURFACE TREATMENT IN Cu2S NANOCRYSTALS, A.M. Malyarevich, V.P. Mikhailov, K.V. Yumashev, P.V. Prokoshin, International Laser Center, Minsk, Belarus; V.S. Gurin and M.V. Artemyev, Physico-Chemical Problems Research Institute, Belarus State University, Minsk, Belarus.

K7.27 ZnS/Si/ZnS QUANTUM WELL STRUCTURES FOR VISIBLE LIGHT EMISSION, Eric Bretschneider, Albert Dayydov, Clint McCreary, Li Wang, Timothy J. Anderson, University of Florida, Chemical Engineering Department, Gainesville, FL; H.Paul Maruska and Peter E. Norris, NZ Applied Technologies, Woburn, MA.

K7.28 THE ELECTRONIC CONTRIBUTION TO THE ELASTIC CONSTANTS OF STRAINED III-V NANOSTRUCTURES UNDER HIGH MAGNETIC FIELDS, Kamakhya P. Ghatak, Calcutta University, Department of Electronic Science, Calcutta, India; B. Nag, Calcutta University, Department of Applied Physics, Calcutta, India; and S.N. Biswas, RWTH Aachen, Aachen, Germany.

K7.29 ON THE PHOTOEMISSION FROM QUANTAM CONFINED STRAINED III-V NANOSTRUCTURES, Kamakhya P. Ghatak, Calcutta University, Department of Electronic Science, Calcutta, India; B. Nag, Calcutta University, Department of Applied Physics, Calcutta, India; and S.N. Biswas, RWTH Aachen, Aachen, Germany.

K7.30 CRYSTALLINE STRUCTURE AND MORPHOLOGY OF THE PHASES IN MgO, TiO2 AND ZrO2 PREPARED BY THE SOL-GEL TECHNIQUE, Bokhimi, J.L. Boldú, E. Muñoz, O. Novaro, National University of Mexico, Institute of Physics, Mexico D. F., Mexico; T. López and R. Gómez, Universidad Autónoma Metropolitana-Iztapalapa, Department of Chemistry and Universidad de Guanajuato Gto., Department of Chemistry, Mexico, Mexico.

K7.31 CHARACTERIZATION OF THE INTERFACE BETWEEN METAL CONTACTS AND EPILAYERS OF DOPED SiC, M.A. George, W.E. Collins, S. Morgan, A. Burger, Fisk University, Department of Physics, Nashville, TN; D.J. Larkin and J.A. Powell, NASA Lewis Research Center, Cleveland, OH.

K7.32 AFM MEASUREMENT OF THERMALLY INDUCED DEFORMATION OF 1um THICK Cu-POLYIMIDE HIGH DENSITY INTERCONNECT STRUCTURES, T.S. Gross, D.V. Zhmurkin and M.R. Gosz, University of New Hampshire, Department of Mechanical Engineering, Durham, NH.

K7.33 NANOCRYSTALLIZATION STUDIES IN Co AND Fe-RICH AMORPHOUS ALLOYS, S. Aburto, M. Jiménez, R. Gómez, V. Marquina, M.L. Marquima, R. Ridaura, UNAM, Faculty of Science, Department of Physics, Mexico, Mexico; P. Santiago, L. Rendon and R. Valenzuela, IIM, University Nacional Autónoma de Mexico, Mexico, Mexico.

K7.34 THERMAL AND MECHANICAL CHARACTERISTICS OF POLYIMIDE BASED CERAMERS, P.R. McDaniel and T.L. St. Clair, NASA Langley Research Center, Hampton, VA.

JOINT SESSION K8/L6: X-RAY ANALYSIS TECHNIQUES
AND STRAIN MEASUREMENT
Chairs: F.H. Pollak and T.P. Pearsall
Wednesday Morning, November 29
Essex West (W)

8:30 A.M. *K8.1/L6.1
STRUCTURAL CHARACTERIZATION OF REACTIVE ION ETCHED SEMICONDUCTOR NANOSTRUCTURES USING X-RAY RECIPROCAL SPACE MAPPING, Günther Bauer, Anton A. Darhuber and Vaclav Holy, Universität Linz, Institut für Halbleiterphysik, Linz, Austria.

9:00 A.M. K8.2/L6.2
STRAIN RELAXATION CONTROL IN AlN AND Cr FILMS DEPOSITED ON CRYSTALLINE SUBSTRATES WITH BURIED AMORPHOUS LAYER, L.Ya. Krasnobaev, Z.J. Radzimski and J.J. Cuomo, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

9:15 A.M. K8.3/L6.3
PHOTOREFLECTANCE CHARACTERIZATION OF InGaAs-AlGaAs-GaAs STRAIN-INDUCED QUANTUM WELL WIRES, M. Geddo, S. Di Lernia, A. Stella, University of Pavia, Department of Physics "A. Volta," Pavia, Italy; A. Bosacchi, S. Franchi, CNR-MASPEC Institute, Parma, Italy; M. Gentili and D. Peschiaroli, CNR-IESS Institute, Roma, Italy.

9:30 A.M. K8.4/L6.4
STRAIN RELAXATION OF SiGe ALLOYS MEASURED IN REAL TIME DURING MBE GROWTH, J.A. Floro, E. Chason and S.R. Lee, Sandia National Laboratories, Albuquerque, NM.

9:45 A.M. K8.5/L6.5
300 K INFRARED AND MICROWAVE CONDUCTIVITY OF 2D-STRESSED InSb/A1203 MONOCRYSTALLINE THIN LAYERS, A.G. Padalko, Russian Academy of Sciences Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; V.I. Trifonov, Russian Academy of Sciences Institute for Radiotechnics and Electronics, Friazino, Russia; and O.N. Pashkova, Russian Academy of Sciences Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia.

10:00 A.M. BREAK

10:30 A.M. *K8.6/L6.6
COHERENT GRATING X-RAY DIFFRACTION (CGXD) AND ITS APPLICATIONS TO STRUCTURAL STUDIES OF NANOSTRUCTURE ARRAYS, Qun Shen, Cornell University, Cornell High Energy Synchrotron Source (CHESS), Ithaca, NY.

11:00 A.M. K8.7/L6.7
OPTICAL AND STRUCTURAL CHARACTERIZATION OF ARSENIDE/PHOSPHIDE INTERFACES FORMED BY FLOW MODULATION EPITAXY, D.T. Emerson, K.L. Whittingham, J.A. Smart and J.R. Shealy, Cornell University, School of Electrical Engineering, Ithaca, NY.

11:15 A.M. K8.8/L6.8
A NOVEL METHOD FOR DETERMINING THIN FILM DENSITY BY ENERGY-DISPERSIVE X-RAY REFLECTIVITY, William E. Wallace and Wen-li Wu, National Institute of Standards and Technology, Gaithersburg, MD.

11:30 A.M. K8.9/L6.9
COMBINE SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE FOR FINE CHARACTERIZATION OF COMPLEX EPITAXIAL STRUCTURES, Pierre Boher and Jean Louis Stehle, SOPRA S.A., Bois-Colombes, France.

11:45 A.M. K8.10/L6.10
A NEW TECHNIQUE FOR DEPTH PROFILING ON A NANOMETER SCALE, Heinrich Schwenke, Joachim Knoth, Robert Guenther, Guido Wiener and Rüdiger Bormann, GKSS-Research Center, Geesthact, Germany.

JOINT SESSION K9/L7: SURFACE PROCESSING AND
PASSIVATION/STRAIN AND INTERFACIAL DEFECTS
Chairs: B.B. Goldberg and C. Hayzelden
Wednesday Afternoon, November 29
Essex West (W)

1:30 P.M. *K9.1/L7.1
SCANNED PROBE TECHNIQUES FOR THE FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR DEVICES, John A. Dagata, National Institutes of Standards and Technology, Gaithersburg, MD.

2:00 P.M. K9.2/L7.2
THE UNIFORMITY OF SURFACE PASSIVATION AFTER (NH4)S2 TREATMENT STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, Jutong Liu and T.F. Kuech, University of Wisconsin, Department of Chemical Engineering, Madison, WI.

2:15 P.M. K9.3/L7.3
ELECTRONIC AND CHEMICAL PASSIVATION OF GaAs SURFACES USING CS2, Ju-Hyung Lee, V.A. Burrows and P.F. McMillan, Arizona State University, Department of Chemistry, Tempe, AZ.

2:30 P.M. K9.4/L7.4
CATHODOLUMINESCENCE SPECTROSCOPY FOR EVALUATION OF DEFECT PASSIVATION IN GaSb, U. Pal, J. Piqueras, University Complutense, Dpto de Fisica de Materiales, Madrid, Spain; P.S. Dutta, H.L. Bhat, Indian Institute of Science, Bangalore, India; G.C. Dubey, Vikram Kumar, Solid State Physics Laboratory, Delhi, India; and E. Diequez, University Autonoma, Dpto de Fisica de Materiales, Madrid, Spain.

2:45 P.M. K9.5/L7.5
CATHODOLUMINESCENCE STUDY OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN III-V MULTIPLE QUANTUM WELL STRUCTURES, L.-L. Chao, M.B. Freiler, M. Levy, J.-L. Lin, G.S. Cargill III, R. M. Osgood Jr., Columbia University, Department of Chemical Engineering, Materials Science, New York, NY; and G.F. McLane, Army Research Laboratory, Fort Monmouth, NJ.

3:00 P.M. BREAK

3:30 P.M. *K9.6/L7.6
TRANSMISSION ELECTRON DIFFRACTION TECHNIQUES FOR NM SCALE STRAIN MEASUREMENT IN SEMICONDUCTORS, J. Vanhellemont, IMEC, Leuven, Belgium; K.G.F. Janssens, KU Leuven, Department of Metallurgy and Materials Engineering, Leuven, Belgium; S. Frabboni, Universita di Modena, Dipartimento di Fisica, Modena, Italy; R. Balboni and A. Armigliato, CNR Istituto LAMEL, Bologna, Italy.

4:00 P.M. K9.7/L7.7
ANALYSIS OF LOCALIZED SMALL DEFECT IN ULSIs, K. Fukumoto, H. Maeda, Y. Mashiko, M. Sekine and H. Koyama, Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center, Hyogo, Japan.

4:15 P.M. K9.8/L7.8
SEM ELECTRON CHANNELING CONTRAST IMAGING OF MISFIT DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS, R.R. Keller, National Institutes of Standards and Technology, Materials Reliability Division, Boulder, CO; and J.E. Angelo, Purdue University, School of Materials Engineering, W. Lafayette, IN.

4:30 P.M. K9.9/L7.9
Ge-RELATED INTERFACIAL DEFECT IN SiGe ALLOY STRUCTURES, Patricia J. Macfarlane, Mary Ellen Zvanut, University of Alabama at Birmingham, Birmingham, AL; William E. Carlos, Mark E. Twigg and Phillip E. Thompson, Naval Research Laboratory, Washington, DC.

4:45 P.M. K9.10/L7.10
INTERFACIAL AND NEAR-SURFACE DEFECTS IN Si MATERIALS INVESTIGATED BY MOS/EBIC, H.R. Kirk, Z. Radzimski, A. Romanowski and G.A. Rozgonyi, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

SESSION K10: EFFECT OF STRAIN AND
CHEMISTRY ON INTERFACES
Chair: S.M. Prokes
Thursday Morning, November 30
Essex North Center (W)

8:30 A.M. *K10.1
CONTINUUM ELASTIC STRAIN EFFECTS AT SEMICONDUCTOR SURFACES AND INTERFACES, Thomas P. Pearsall, University of Washington, Department of Materials Science and Engineering, Seattle, WA.

9:00 A.M. K10.2
INCORPORATION OF NITROGEN ATOMS AT Si/SiO2 INTERFACES OF FETS TO IMPROVE DEVICE RELIABILITY, G. Lucovsky, D.R. Lee, Z. Jing and J.L. Whitten, North Carolina State University, Department of Materials Science and Engineering, Physics and Electrical and Computer Engineering, Raleigh, NC.

9:15 A.M. K10.3
THEORETICAL MODELLING OF THE SURFACE OXIDATION OF A SILICON CARBIDE NANOPOWDER BASED ON THE v(SiH) FREQUENCY EVOLUTION, Marie-Isabelle Baraton, LMCTS URA 320 CNRS, University of Limoges, Limoges, France; and Sylvette Besnaïnou, Laboratory of Physical Chemistry, URA 176 CNRS, Paris, France.

9:30 A.M. BREAK

SESSION K11: DEPOSITION AND SURFACE PROPERTIES OF
SEMICONDUCTOR NANOPARTICLES
Chair: K. Kash
Thursday Morning, November 30
Essex North Center (W)

10:00 A.M. K11.1
PHASE TRANSFORMATION OF GERMANIUM ULTRAFINE PARTICLES AT HIGH TEMPERATURE, Shinji Nozaki, Seiichi Sato, Hiroshi Ono, Hiroshi Morisaki, University of Electro-Communications, Communications and Systems, Chofu, Japan; and Mitsuo Iwase, Tokai University, Electrical Engineering, Kanagawa, Japan.

10:15 A.M. K11.2
SURFACE TREATMENT EFFECTS ON THE MICROSTRUCTURE OF uc-Si,Ge:H DEPOSITED BY REACTIVE MAGNETRON SPUTTERING, S.M. Cho, K. Christensen, D. Wolfe, D.R. Lee, G. Lucovsky and D.M. Maher, North Carolina State University, Department of Materials Science and Engineering, Physics and Electrical and Computer Engineering, Raleigh, NC.

10:30 A.M. K11.3
POSSIBILITY OF EXCITON POLARONIC STATES AT THE SURFACE OF SILICON NANOCRYSTALLITES, G. Allan, C. Delerue and M. Lannoo, IEMN, Department ISEN, Lille, France.

10:45 A.M. K11.4
THE EFFECT OF HYDROGEN PASSIVATION ON LUMINESCENCE OF ION BEAM SYNTHESIZED GE NANOCRYSTALS IN SiO2 MATRICES, Kyu S. Min, Kirill V. Shcheglov, Renato Camata and Harry A. Atwater, California Institute of Technology, Thomas J. Watson Laboratory of Applied Physics, Pasadena, CA.

11:00 A.M. K11.5
ELECTRICAL CHARACTERISTICS AND TEMPERATURE EFFECTS OF ELECTROLUMINESCING SI NANOCRYSTALS, E.W. Forsythe, E.A. Whittaker, Stevens Institute of Technology, Physics and Engineering Physics Department, Hoboken, NJ; B.A. Khan, Philips Laboratories, Briarcliff, NY; B.S. Sywe, Rutgers University, Piscataway, NJ; and G.S. Tompa, Structured Materials Industries INc., Piscataway, NJ.

11:15 A.M. K11.6
CONTROL OF SILICON NANOCRYSTALLITE LUMINESCENCE BEHAVIOR THROUGH SURFACE TREATMENTS, A.A. Seraphin and K.D. Kolenbrander, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

11:30 A.M. K11.7
PHASES AND LUMINESCENCE OF NANOMETER -SIZE ZIRCONIA, Wang Dazhi, University of Science and Technology of China (USTC), Department of Materials Science and Engineering, Hefei, China, Applied Surface Physics Laboratory of Fudan University, Hefei, China and University of Science and Technology of China (USTC), The Structure Research Open Laboratory, Hefei, China; Zuo Jian, University of Science and Technology of China (USTC), The Structure Research Open Laboratory, Hefei, China; Hou Xiaoyuan, Applied Surface Physics Laboratory of Fudan University, Hefei, China; Li Guofeng, University of Science and Technology of China (USTC), Department of Materials Science and Engineering, Hefei, China; and Miao Xiyue, Applied Surface Physics Laboratory of Fudan University, Hefei, China.

SESSION K12: NANOSTRUCTURES
Chair: C. Sotomayor-Torres
Thursday Afternoon, November 30
Essex North Center (W)

1:30 P.M. *K12.1
PROPERTIES OF STRAIN-INDUCED SEMICONDUCTOR NANOSTRUCTURES, K. Kash, Case Western Reserve University, Department of Physics, Cleveland, OH.

2:00 P.M. *K12.2
INVESTIGATION OF LOCAL STRUCTURES AROUND Eu AND Tb LUMINESCENT CENTERS IN NANOCRYSTALS OF ZnS:Eu, Y2O3:Eu, AND Y2O3:Tb, Y.L. Soo, S. W. Huang, Z.H. Ming, Y.H. Kao, State University of New York at Buffalo, Department of Physics, Buffalo, NY; E. Goldburt, R. Hodel, B. Kulkarni and R. Bhargava, Nanocrystals Technology, Briarcliff Manor, NY.

2:15 P.M. K12.3
NONLINEAR OPTICAL PROPERTIES OF CuS NANOCRYSTALS WITH MODIFIED SURFACE, K.V. Yumashev, V.P. Mikhailov, A.M. Malyarevich, P.V. Prokoshin, International Laser Center, Minsk, Belarus; V.S. Gurin and M.V. Artemyev, Physico-Chemical Problems Research Institute, Belarus State University, Minsk, Belarus.

2:45 P.M. BREAK

SESSION K13: STRESS EFFECTS
Chairs: S. Murarka and R.C. Cammarata
Thursday Afternoon, November 30
Essex North Center (W)

3:00 P.M. *K13.1
STRESS RELAXATION IN ULTRA THIN FILMS, Manfred Wuttig and Quanmin Su, University of Maryland, Department of Materials and Nuclear Engineering, College Park, MD.

3:30 P.M. K13.2
SIMPLE MODEL FOR INTERFACE STRESSES OF SEMICHOHERENT BOUNDARIES, R.C. Cammarata, The Johns Hopkins University, Department of Materials Science and Engineering, Baltimore, MD; and K. Sieradzki, Arizona State University, Department of Mechanical and Aerospace Engineering, Tempe, AZ.

3:45 P.M. K13.3
THE -DEPENDENCE OF THE EFFECTIVE ELASTIC CONSTANTS FOR X-RAY STRAIN/STRESS ANALYSIS, Yongchu Song and I.C. Noyan, Columbia University, Department of Chemical Engineering, New York, NY.

4:00 P.M. *K13.4
USE OF ADVANTAGEOUS IMPURITY EFFECTS IN METALLIZATION, S. Murarka, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY.

4:30 P.M. K13.5
MEASUREMENT OF THE YIELD STRESS AND MODULUS OF FREE-STANDING, Ag/Cu MULTILAYERED THIN FILMS, Haibo Huang and Frans Spaepen, Harvard University, Division of Applied Sciences, Cambridge, MA.

4:45 P.M. K13.6
INTERNAL STRESS REINFORCING MECHANISMS IN NANOCOMPOSITES, Zhonghua Fang, Jiahua Gao, Zhejiang University, Department of Materials Science and Engineering, Hangzhou, China; Changrong Ji, Florida Tech, Department of Mechanical Engineering, Melbourne, FL; Guangjian Huang, Shaoxing Materials Corporation, Shaoxing, China; Zhijian Shen and Zishang Ding, Zhejiang University, Department of Materials Science and Engineering, Hangzhou, China.



SESSION K14: NANOSTRUCTURED METALS AND CERAMICS
Chair: Manfred Wuttig
Friday Morning, December 1
Essex North Center (W)

8:30 A.M. K14.1
INTERFACIAL STRUCTURE IN ALUMINUM THIN FILMS DEPOSITED ON SAPPHIRE, D.L. Medlin, R.Q. Hwang, S.E. Guthrie, N.R. Moody, K.F. McCarty and M.I. Baskes, Sandia National Laboratories, Livermore, CA.

8:45 A.M. K14.2
GOLD NANOCOMPOSITES PREPARED BY REACTIVE SPUTTERING, L. Maya, M. Paranthaman, T. Thundat, Oak Ridge National Laboratory, Oak Ridge, TN; W.R. Allen, A.L. Glover and J.C. Mabon, Y-12 Plant, Oak Ridge, TN.

9:00 A.M. K14.3
MAGNETIC PROPERTIES OF NANOSCALE IRON PARTICLES PHOTODEPOSITED IN GLASS, D. Dunil, C. Tsang, H.D. Gafney, Queens College/City University of New York, Department of Chemistry and Biochemistry, Flushing, NY; M. Rafailovich, J. Sokolov and R. Gambino, State University of New York, Department of Materials Science and Engineering, Stony Brook, NY.

9:15 A.M. BREAK

9:45 A.M. K14.4
HOT STAGE X-RAY DIFFRACTION (HXRD) ANALYSIS OF THE COMBINED EFFECTS OF PRIMARY CRYSTALLITE SIZE AND STATE OF POWDER AGGREGATION ON THE PHASE TRANSFORMATION CHARACTERISTICS OF HIGH PURITY BARIUM TITANATE, Mark R. Leonard, E. Koray Akdogan and Ahmad Safari, Rutgers, The State University of New Jersey, Department of Ceramic Science and Engineering, Piscataway, NJ.

10:00 A.M. K14.5
THE EFFECT OF ELECTRIC POLING ON THE SURFACE PHATOVOLTAIC PROPERTIES OF LEAD TITANATE NANOCRYSTALS, Jihua Yang, Yubai Bai, Yinghua Zhang, Peng Zhang, Tiejin Li, Jilin University, Department of Chemistry, Changchun, China; and Guangyan Hong, Changchun Institute of Applied Chemistry, Changchun, China.

10:15 A.M. K14.6
CATHODOLUMINESCENCE FROM METAL NANOPARTICLES, Igor A. Konovalov, Institute of Materials Science, Kiev, Ukraine; and Klavdiya N. Pilipchak, Institute of Physics, Kiev, Ukraine.

10:30 A.M. K14.7
STRESS EFFECTS IN 2D ARSENIC DIFFUSION IN SILICON, V. Rao and W. Zagozdzon-Wosik, University of Houston, Department of Electrical and Computer Engineering, Houston, TX.


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Products and Services
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Aldrich Chemical Company
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FEI Company
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TEC
Tencor Instruments
TexSEM Laboratories, Inc.
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See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.