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Fall 2008 Logo2008 MRS Fall Meeting & Exhibit

December 1-5, 2008 | Boston
Meeting Chairs:
 S. Ashok, Shenda M. Baker, Michael R. Fitzsimmons, Young-Chang Joo

Symposium D : Rare-Earth Doping of Advanced Materials for Photonic Applications

2008-12-01   Show All Abstracts

Symposium Organizers

Volkmar Dierolf Lehigh University
Yasufumi Fujiwara Osaka University
Uwe Hommerich Hampton University
Pierre Ruterana CIMAP
John Zavada North Carolina State University

Symposium Support

Army Research Office
D1: Mechanisms and Laser Materials
Session Chairs
Pierre Ruterana
Monday PM, December 01, 2008
Room 201 (Hynes)

2:30 PM - **D1.1
Electron Spin Resonance Measurement on Er,O-codoped GaAs.

Hitoshi Ohta 1 2 , Masashi Fujisawa 2 , Makoto Yoshida 2 4 , Yasufumi Fujiwara 3
1 Molecular Photoscience Research Center, Kobe University, Kobe, Hyogo, Japan, 2 Department of Frontier Research and Technology, Kobe University, Kobe, Hyogo, Japan, 4 Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, Japan, 3 Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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3:00 PM - D1.2
Luminescence Properties in Er,O-codoped GaAs Light-Emitting Devices with Double Excitation Mechanism.

Yasufumi Fujiwara 1 , Kei Fujii 1 , Asafumi Fujita 1 , Yuji Ota 1 , Yoshiaki Ito 1 , Takashi Kawasaki 1 , Kohta Noguchi 1 , Takahiro Tsuji 1 , Yoshikazu Terai 1
1 Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka Japan

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3:15 PM - **D1.3
Magnetic Resonance Study of Non-Equivalent Centers Created by 4f-Ions in Congruent and Stoichiometric Lithium Niobate.

Galina Malovichko 1 , Valentin Grachev 1 , Jonathan Jorgensen 1 , Martin Meyer 1 , Mark Munro 1 , Benjamin Todt 1 , Ian Vrable 1 , Edward Kokanyan 2 , Viktor Bratus 3 , Sergei Okulov 3
1 Physics Department, Montana State University, Bozeman, Montana, United States, 2 , Institute of Physical Researches, Ashtarak Armenia, 3 , Institute of Semiconductor Physics, Kiev Ukraine

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3:45 PM - D1
BREAK

4:15 PM - **D1.4
Novel Materials for an Eye-safe, Resonantly-pumped, Er-doped Laser Development – Recent Successes.

Mark Dubinskii 1
1 , US Army Research Lab., Adelphi, Maryland, United States

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4:45 PM - **D1.5
Yb3+ doped CaF2 Ceramic Laser Materials.

Michel Mortier 1 , Philippe Aubry 1 , Jessica Labeguerie-Egea 1 , Daniel Vivien 1 , Gilles Patriarche 2
1 LCMCP, ENSCP-CNRS, Paris France, 2 LPN, CNRS, Marcoussis France

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5:15 PM - D1.6
Elaboration of Yb doped Sc2O3 Transparent Ceramics for Laser Applications.

Laurence Longuet 1 , Anne-Cecile Bravo 1 , Denis Autissier 1 , Pascal Vissie 1 , Jean-Louis Longuet 1 , Sebastien Lambert 1
1 , CEA, Le Ripault, Monts France

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5:30 PM - D1.7
Phase Equilibria and Crystal Growth for LiREF4 Scheelite Laser Crystals.

Detlef Klimm 1 , Ivanildo dos Santos 2 , Izilda Ranieri 2 , Sonia Baldochi 2
1 , Leibniz Institute for Crystal Growth, Berlin Germany, 2 Center for Lasers and Applications, IPEN, São Paulo Brazil

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2008-12-02   Show All Abstracts

Symposium Organizers

Volkmar Dierolf Lehigh University
Yasufumi Fujiwara Osaka University
Uwe Hommerich Hampton University
Pierre Ruterana CIMAP
John Zavada North Carolina State University
D2: Nitrides I
Session Chairs
Volkmar Dierolf
Tuesday AM, December 02, 2008
Room 201 (Hynes)

9:30 AM - **D2.1
Development of Rare-earth Doped III-Nitride and its Application for Optoelectronic Devices.

Akihiro Wakahara 1 , Hiroshi Okada 1
1 , Toyohashi University of Technology, Toyohashi Japan

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10:00 AM - D2.2
The Dependence of the Luminescence Efficiency of Eu-Implanted GaN on the Implantation Fluence and Post-Annealing Temperature.

Iman Roqan 1 , Kevin O'Donnell 1 , Carol Trager-Cowan 1 , Katharina Lorenz 2 , Eduardo Alves 2 , Michal Bockowski 3
1 Physics Department, SUPA, University of Strathclyde, Glasgow United Kingdom, 2 Department of Physics, Instituto Tecnologico e Nuclear, Sacavem Portugal, 3 , Institute of High Pressure Physics Polish Academy of Sciences, Warsaw Poland

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10:15 AM - D2.3
Optical Characterization of Nanocrystallized AlN and AlN: Er Films Prepared by Magnetron Sputtering.

Valerie Brien 1 , Syed Sajjad Hussain 1 , Hervé Rinnert 2 , Nolwenn Tranvouez 1 , Manuel Dossot 3 , Bernard Humbert 3 , Philippe Pigeat 1
1 LPMIA UMR CNRS 7040, CNRS/Nancy-University, Vandœuvre-les-Nancy France, 2 LPM UMR CNRS 7556, Nancy-University/CNRS , Vandœuvre-les-Nancy France, 3 LCPME UMR 7564 CNRS, CNRS/Nancy-University, Villers-les-Nancy France

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10:30 AM - **D2.4
GaN Doped with Neodymium by Plasma-Assisted Molecular Beam Epitaxy for Potential Lasing Applications.

Eric Readinger 1 , Grace Metcalfe 1 , Hongen Shen 1 , Michael Wraback 1 , Naveen Jha 2 , Nathaniel Woodward 2 , Pavel Capek 2 , Volkmar Dierolf 2
1 , US Army Research Laboratory, Adelphi, Maryland, United States, 2 Physics Department, Lehigh University, Bethlehem, Pennsylvania, United States

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11:00 AM - D2
BREAK

11:30 AM - D2.5
Different Behavior for AlN and GaN during Medium Energy Range Rare Earth Ion Implantation and Annealing.

Pierre Ruterana 1 , Marie Pierre Chauvat 1 , Florence Gloux 1 , Katharina Lorenz 2 , Eduardo Alves 2
1 CIMAP, CNRS, Caen France, 2 , Instituto Tecnológico e Nuclear, Sacavem Portugal

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11:45 AM - D2.6
Spatially Resolved Site Selective Optical Spectroscopy on Nd Doped GaN Epitaxial Layers.

Nate Woodward 1 , Naveen Jha 1 , Volkmar Dierolf 1 , Eric Readinger 2 , Grace Metcalfe 2 , Michael Wraback 2
1 Physics, Lehigh University, Bethlehem, Pennsylvania, United States, 2 Sensors and Electronic Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland, United States

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12:00 PM - D2.7
Luminescence and Excitation Mechanisms of Eu-doped GaN Phosphor.

Wojciech Jadwisienczak 1 , Tiju Thomas 2 , Michael Spencer 2 , Nelson Garces 3 , Evan Glaser 3 , Krzysztof Wisniewski 4
1 School of EECS, Ohio University, Athens, Ohio, United States, 2 School of ECE, Cornell University, Ithaca, New York, United States, 3 Code 6877, Naval Research Laboratory, Washington, District of Columbia, United States, 4 Institute of Experimental Physics, University of Gdansk, Gdansk Poland

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12:15 PM - D2.8
Development of RE-Doped III-Nitride Nanomaterials for Laser Applications.

Geliang Sun 1 , Xiaofei Liu 1 , Stephen Tse 1 , Sudhir Trivedi 2 , Uwe Hommerich 3 , John Zavada 4
1 Mechanical and Aerospace Engineering, Rutgers University, Piscataway, New Jersey, United States, 2 , Brimrose Corporation, Baltimore, Maryland, United States, 3 Physics, Hampton University, Hampton, Virginia, United States, 4 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States

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12:30 PM - **D2.9
Rare Earth Activated GaN Luminescent Powders by Combustion Synthesis and GaN:RE Thin Films Deposited by a Novel Hybrid PLD/MOCVD Technique.

Gustavo Hirata 1
1 Center of Nanoscience and Nanotechnology, National University of Mexico, San Ysidro, California, United States

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D3: Nitrides II
Session Chairs
G. Hirata
Tuesday PM, December 02, 2008
Room 201 (Hynes)

2:30 PM - **D3.1
Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN.

Shuichi Emura 1 , Masahiro Takahashi 1 , Hiroyuki Tambo 1 , Tetsuya Nakamura 2 , Y. Zhou 1 , Shigehiko Hasegawa 1 , Hajime Asahi 1
1 The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, Japan, 2 , JASRI/SPring-8, Sayocho, Hyogo, Japan

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3:00 PM - D3.2
First Principles Calculations for Gd doped GaN.

Chandrima Mitra 1 , Walter R.L Lambrecht 1
1 Physics , Case Western Reserve University, Cleveland, Ohio, United States

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3:15 PM - D3.3
Magnetotransport in Gd-implanted Wurtzite GaN/AlxGa1-xN High Electron Mobility Transistor Structures.

Fang-Yuh Lo 1 2 , Alexander Melnikov 2 , Dirk Reuter 2 , Yvon Cordier 3 , Andreas Wieck 2 3
1 Department of Physics, National Dong-Hwa University, Hualien Taiwan, 2 Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum Germany, 3 Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne France

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3:30 PM - D3.4
Rare Earth Doping of GaN with Gadolinium by MOCVD.

Shalini Gupta 1 , Andrew Melton 1 , William Fenwick 1 , Hongbo Yu 1 , Ian Ferguson 1 2
1 Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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3:45 PM - D3
BREAK

4:00 PM - **D3.5
Gd-doped III-nitride Dilute Magnetic Semiconductor Materials.

Ryan Davies 1 , Jennifer Hite 1 , Rachel Frazier 1 , Brent Gila 1 , Gerald Thaler 1 , Cammy Abernathy 1 , Stephen Pearton 1 , Christopher Stanton 2 , John Zavada 3
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States, 2 Physics, University of Florida, Gainesville, Florida, United States, 3 Electronics Division, U.S. Army Research Office, Durham, North Carolina, United States

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4:30 PM - D3.6
Ultraviolet Luminescence from Thullium-doped Aluminum Gallium Nitride Epilayers.

Neeraj Nepal 1 , John Zavada 1 , Ei Ei Brown 2 , Uwe Hommerich 2 , Ashok Sedhain 3 , Jingyu Lin 3 , Hongxing Jiang 3 , Dong Lee 4 , Andrew Steckl 4
1 ECE, North Carolina State Univ, Raleigh, North Carolina, United States, 2 Physics, Hampton University, Hampton, Virginia, United States, 3 Physics, Kansas State University, Manhattan, Kansas, United States, 4 ECE, University of Cincinnati, Cincinnati, Ohio, United States

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4:45 PM - D3.7
Europium Doping of Cubic (Zincblende) GaN by Ion Implantation.

Katharina Lorenz 1 2 , N. Franco 1 2 , E. Alves 1 2 , I. Roqan 3 , K. O'Donnell 3 , C. Trager-Cowan 3 , R. Martin 3 , D. As 4 , M. Panfilova 4
1 UFA, Instituto Tecnologico e Nuclear, Sacavem Portugal, 2 CFNUL, University of Lisbon, Lisbon Portugal, 3 Department of Physics, SUPA, University of Strathclyde, Glasgow United Kingdom, 4 Department of Physics, University of Paderborn, Paderborn Germany

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5:00 PM - D3.8
Current-injected 1.54 μm Emitters based on Er Doped GaN.

Rajendra Dahal 1 , Cris Ugolini 1 , Ashok Sedhain 1 , John Zavada 2 , Jingyu Lin 3 , Hongxing Jiang 3
1 Physics, Kansas State University, Manhattan, Kansas, United States, 2 Electrical & Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 3 Nano Tech Center and Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas, United States

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5:15 PM - D3.9
Excitation Pathways of Rare Earth Ions by Energetic Electrons.

Samson Tafon Penn 1 , Zackery Fleischman 1 , Leon Maurer 1 , Volkmar Dierolf 1
1 Physics, Lehigh University, Bethlehem, Pennsylvania, United States

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5:30 PM - **D3.10
Optical Activation of Rare Earths Implanted into III-Nitrides.

Eduardo Alves 1 , Katharina Lorenz 1 , F. Gloux 2 , P. Ruterana 2 , Alan Braud 2 , Kevin Donnell 3 , Robert Martin 3
1 Physics and Accelerators, ITN, Sacavem Portugal, 2 , CIMAP, UMR 6252 ENSICAEN-CNRS-CEA-UCBN, Caen France, 3 Department of Physics, SUPA, University of Strathclyde, Glasgow United Kingdom

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D4: Poster Session
Session Chairs
Uwe Hommerich
Wednesday AM, December 03, 2008
Exhibition Hall D (Hynes)

9:00 PM - D4.1
Luminescence Enhancement in Eu-doped GaN Powder by Oxidative Passivationof the Surface.

Tiju Thomas 1 , Mvs Chandrashekhar 1 , Carl Poitras 1 , Junxia Shi 1 , Jesse Reiherzer 2 , Francis DiSalvo 2 , Michal Lipson 1 , Michael Spencer 1
1 School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States, 2 Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York, United States

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9:00 PM - D4.10
Luminescence Properties from Si- and Ge-doped AlN:Eu Thin Films Prepared by RF Magnetoron Sputtering.

Naoki Iwata 1 , Shin-ichiro Uekusa 1
1 School of Science and Technology, Meiji University, Kawasaki-shi Japan

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9:00 PM - D4.11
Optical and Luminescent Properties of Highly Oriented Nanocrystalline Gd2-xEuxO3 Thin Films.

Segundo Jauregui-Rosas 1 2 , Oscar Perales-Perez 3 , Maharaj Tomar 2 , Omar Vasquez 2
1 Fisica, Universidad Nacional de Trujillo, Trujillo Peru, 2 Physics, University of Puerto Rico at Mayagüez, Raleigh, North Carolina, United States, 3 Department of Engineering Science and Materials, University of Puerto Rico at Mayagüez, Mayagüez, Puerto Rico, United States

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9:00 PM - D4.12
Studies of III-Nitride Superlattice Structures and its Deformation upon Implantation with Lanthanide Ions.

Mohammad Ebdah 1 , W. Jadwisienczak 2 , H. Morkoc 3 , A. Anders 4
1 Department of Physics and Astronomy, Ohio University, Athens, Ohio, United States, 2 School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio, United States, 3 Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia, United States, 4 , Lawrence Berkeley National Laboratory, Berkeley, California, United States

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9:00 PM - D4.13
Similarities and Differences of Sensitization Mechanism of Er3+ in Si-rich SiO2 with and without Silicon Nanocrystals.

Oleksandr Savchyn 1 , Pieter Kik 1 , Ravi Todi 2 , Kevin Coffey 2
1 CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida, United States, 2 AMPAC, Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, Florida, United States

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9:00 PM - D4.14
Enhancement of Erbium Incorporation with Implantation into Nanoporous GaN.

Chew Beng Soh 1 , Sihui Sim 2 , Sudhiranjan Tripathy 1 , Soo Jin Chua 1 2 , Eduardo Alves 3
1 , Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore Singapore, 2 , Centre of Optoelectronics, National University of Singapore, Singapore Singapore, 3 , ITN, Sacavém Portugal

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9:00 PM - D4.15
First Eu3+@Organo-Si(HIPE) Hybrid Macro-Mesocellular Foams Generation and Associated Photonic Properties.

Nicolas Brun 1 5 , Béatriz Julian-Lopez 2 , Peter Hesemann 3 , Guillaume Laurent 4 , Hervé Deleuze 5 , Clément Sanchez 4 , Marie-France Achard 1 , Annick Babeau 1 , Rénal Backov 1
1 , Centre de Recherche Paul Pascal UPR 8641 CNRS, PESSAC France, 5 , Institut des Sciences Moléculaires UMR 5255 CNRS Université Bordeaux 1, TALENCE France, 2 , Departamento de Química Inorgánica y Orgánica ESTCE Universitat Jaume I, CASTELLÓN Spain, 3 , Institut Charles Gerhardt UMR 5253 Ecole Nationale Supérieure de Chimie, MONTPELLIER France, 4 , Laboratoire de Chimie de la Matière Condensée de Paris UMR 7574 CNRS Université Pierre et Marie Curie, PARIS France

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9:00 PM - D4.16
Fullerene Derivatives with a Red Emissive Europium Substituent.

Anita Fuchsbauer 1 , Olesya Troshina 2 , Pavel Troshin 2 , Robert Koeppe 1 , Rimma Lyubovskaya 2 , Serdar Sariciftci 1
1 Linz Insitute for Organic Solar Cells (LIOS), Johannes Kepler Universtiy Linz, Linz Austria, 2 , Institute of Problems of Chemical Physics of Russian Academy of Science , Chernogolovka, Moscow Region, Russian Federation

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9:00 PM - D4.17
Monoporphyrinate Lanthanide Complex Functionalized Sol-gel Glass with Strong Near-infrared Emission.

Hongshan He 1 , Andrew Sykes 2 , Xingzhong Yan 1 , David Galipeau 1
1 Department of Electrical Engineering, South Dakota State University, Brookings, South Dakota, United States, 2 Department of Chemistry, University of South Dakota, Vermillion, South Dakota, United States

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9:00 PM - D4.18
Nd Diffusion During Sintering of Transparent YAG.

Joel Hollingsworth 1 2 , Joshua Kuntz 1 , Thomas Soules 1
1 Photon Science & Applications, Lawrence Livermore National Laboratory, Livermore, California, United States, 2 Materials Science, University of California, San Diego, La Jolla, California, United States

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9:00 PM - D4.2
Structural and Optical Properties of Rare Earth Implanted AlN.

Katharina Lorenz 1 2 , E. Alves 1 2 , M. Peres 3 , T. Monteiro 3 , M. N. da Silva 3 , M. Soares 3 , J. Leitao 3
1 UFA, Instituto Tecnologico e Nuclear, Sacavem Portugal, 2 CFNUL, University of Lisbon, Lisbon Portugal, 3 Departamento de Física e I3N, Universidade de Aveiro, Aveiro Portugal

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9:00 PM - D4.3
970 nm Infrared Upconversion in Er3+ and Yb3+ Doped PLZT Glass Thin Films.

Xiaomei Guo 1 , Kewen Li 1 , Yingyin Zou 1 , Hua Jiang 1
1 , Boston Applied Technologies, Inc., Woburn, Massachusetts, United States

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9:00 PM - D4.4
Electroluminescence, Charge Trapping and Clustering in Rare-Earth Implanted SiO2-Si Light-Emitting Diodes.

Alexei Nazarov 1 2 , I. Tyagulskii 1 2 , S. Tyagulsiy 1 2 , L. Rebohle 2 , S. Prucnal 2 , J. Lehmann 2 , J. Biskupek 3 , U. Kaiser 3 , W. Skorupa 3
1 National Academy of Sciences of Ukraine, Institute of Semiconductor Physics,, Kyiv Ukraine, 2 Institut fur Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-, Dresden Germany, 3 , University Ulm, , Ulm Germany

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9:00 PM - D4.5
Red Emission Properties of Eu3+ doped GaN Powders Prepared by a Na Flux Method.

Ei Brown 1 , Uwe Hommerich 1 , Takahiro Yamada 2 , Hisanori Yamane 2 , John Zavada 3
1 Physics, Hampton University, Hampton, Virginia, United States, 2 Institute of Multidisciplinary Research fo Advanced Materials, Tohoku University, Sendai Japan, 3 Electrical and Computer Engineering, North Carolina state University, Raleigh, North Carolina, United States

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9:00 PM - D4.6
ESR Study of Er-concentration Effect in Photoluminescent Semiconductor GaAs:Er,O.

Masashi Fujisawa 1 , Atsushi Asakura 2 , Elmasry Fatma 2 , Susumu Okubo 3 , Hitoshi Ohta 1 2 3 , Yasufumi Fujiwara 4
1 Department of Frontier Research and Technology, Kobe University, Kobe Japan, 2 Graduate School of Sciences, Kobe University, Kobe Japan, 3 Molecular Photoscience Research Center, Kobe University, Kobe Japan, 4 Graduate School of Engineering, Osaka University, Osaka Japan

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9:00 PM - D4.7
Optical Properties of High Mole-Fraction Europium Doped Beta Gallium Oxide.

Patrick Wellenius 1 , Robert Kolbas 1 , John Muth 1 , Steven LeBoeuf 2 , Michael Aumer 2 , Jesse Tucker 2
1 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 , Valencell, Inc., Raleigh, North Carolina, United States

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9:00 PM - D4.8
Enhanced 1.54 μm Luminescence in Er-doped ZnO Nanoparticle Films via Indirect Excitation.

Zhengda Pan 1 , S. Morgan 1 , A. Ueda 1 , R. Aga 1 , H. Xu 2 , S. Hark 2 , R. Mu 1
1 , Fisk University, Nashville, Tennessee, United States, 2 , The Chinese University of Hong Kong, Hong Kong China

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9:00 PM - D4.9
Characterization of Er3+ Ions in Aluminum Nitride Crystals Using Electron Paramagnetic Resonance.

Shan Yang 1 , S. Evans 1 , N. Giles 1 , L. Halliburton 1 , G. Slack 2 , S. Schujman 2 , K. Morgan 2 , R. Bondokov 2 , S. Mueller 2
1 Physics, West Virginia University, Morgantown, West Virginia, United States, 2 , Crystal IS, Inc., Green Island, New York, United States

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2008-12-03   Show All Abstracts

Symposium Organizers

Volkmar Dierolf Lehigh University
Yasufumi Fujiwara Osaka University
Uwe Hommerich Hampton University
Pierre Ruterana CIMAP
John Zavada North Carolina State University
D5: Rare Earth Doping and Devices in Silicon-related Materials
Session Chairs
Tom Gregorkiewicz
Wednesday AM, December 03, 2008
Room 201 (Hynes)

9:30 AM - D5.1
β-Ga2O3 Nanostructures Doped with Rare Earth Ions for Photonic Nanodevices.

Emilio Nogales 1 , Bianchi Mendez 1 , Javier Piqueras 1 , Jose Angel García 2
1 Departamento de Física de Materiales, Universidad Complutense de Madrid, Madrid Spain, 2 Departamento de Física Aplicada II, Universidad del País Vasco, Bilbao Spain

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9:45 AM - D5.2
Size Control, Surface Control and Surface Modification of Doped Lanthanide Phosphate Nanocrystals.

Katharina Hickmann 1 , Karsten Koempe 1 , Anke Oertel 1 , Markus Haase 1
1 Inorganic Chemistry I- Materials Research, University of Osnabrück, Institute of Chemistry, Osnabrück, Niedersachsen, Germany

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10:00 AM - **D5.3
Deposition of Single-phase ErxY2-xSiO2 Thin Films for a Compact, High Gain High Optical in Compact Volume on a Si Chip.

Jung Shin 1 , Kiseok Suh 1 , Jee Soo Chang 1
1 Physics, KAIST, Daejeon Korea (the Republic of)

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10:30 AM - *
BREAK

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11:00 AM - **D5.4
Fabrication and Evaluation of Self-organized Er2SiO5 Crystalline Films for the 1.5μm Emitters and Amplifiers in Silicon Photonics.

Tadamasa Kimura 1 , Hideo Isshiki 1
1 Electronic Engineering, Univ. Electro-Communications, Tokyo Japan

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11:45 AM - D5.6
Huge Performance Increase of Tb-implanted MOS Light Emitting Devices with SiOxNy Layers Moderating Hot Carrier Effects.

Lars Rebohle 1 , Jiaming Sun 2 1 , Slawomir Prucnal 3 1 , Alexei Nazarov 4 1 , Igor Tyagulskii 4 1 , Manfred Helm 1 , Wolfgang Skorupa 1
1 Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., Dresden Germany, 2 Key Laboratory of Weak Light Nonlinear Photonics, Nankai University, Nankai China, 3 Department of Ion Beam Physics and Ion Implantation, Marie Curie-Sklodowska University, Lublin Poland, 4 Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev Ukraine

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12:00 PM - D5.7
Optimization of Si Nanoparticle Size in Nanostructured Er-Si:Al2O3 Thin Films to Enhance the Er3+ Luminescence by Photon and Electron Excitation.

Rosalia Serna 1 , Sara Nunez-Sanchez 1 , Emilio Nogales 2 , Bianchi Mendez 2
1 Instituto de Optica, CSIC, Madrid, Madrid, Spain, 2 Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Computense, Madrid, Madrid, Spain

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12:15 PM - D5.8
Photoluminescence Properties of Erbium-doped Silicon Oxycarbide Thin Films with a Low Carbon Content (SiC0.20O1.70).

Vasileios Nikas 1 , Spyros Gallis 1 2 , Himani Suhag 1 , Mengbing Huang 1 , Alain Kaloyeros 1
1 College of nanoscale schiences and engineering, State university of New York at Albany, Albany, New York, United States, 2 , IBM Microelectronics, Semiconductor Reasearh and development, East Fishkill, New York, United States

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12:30 PM - D5.9
Influence of Upconversion on Er2SiO5 Waveguide Light Emitting Devices.

Hideo Isshiki 1 , Takayuki Nakajima 1 , Tadamasa Kimura 1
1 Electronic Engineering, The Univ. of Electro-Communications, Tokyo Japan

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12:45 PM - D5.10
Erbium-based Active Materials Integrated with Wafer-bonded Silicon Slot Waveguides for Laser and Optical Amplifier Applications.

Ryan Briggs 1 , Gerald Miller 1 , Harry Atwater 1
1 Thomas J. Watson Laboratory of Applied Phyiscs, California Institute of Technology, Pasadena, California, United States

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D6/MM9: Joint Session: Er Doped Si Nanostructures
Session Chairs
Tadamasa Kimura
Wednesday PM, December 03, 2008
Room 309 (Hynes)

2:30 PM - **D6.1/MM9.1
Rare Earth Ion Beam Processing for Silicon Photonics.

Wolfgang Skorupa 1 , Lars Rebohle 1 , Slawomir Prucnal 1 , Charaf Cherkouk 1 , Manfred Helm 1
1 Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Dresden Germany

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3:00 PM - D6.2/MM9.2
The Role of Hydrogen in the Luminescence-center-mediated Er3+ Excitation in Si-rich SiO2 with and without Si Nanocrystals.

Pieter Kik 1 , Oleksandr Savchyn 1 , Ravi Todi 2 , Kevin Coffey 2
1 CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida, United States, 2 AMPAC, Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, Florida, United States

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3:15 PM - D6.3/MM9.3
Er-doped Si Nanolayers for Generation of IR and THz Range Radiation.

Salvatore Minissale 1 , Tom Gregorkiewicz 1
1 Van der Waals Zeeman Institute, University of Amsterdam, Amsterdam Netherlands

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3:30 PM - D6/MM9
BREAK

4:00 PM - **D6.4/MM9.4
Towards an Er Doped Silica Amplifier Sensitized by Silicon Nanoclusters.

Nicola Daldosso 1 , Daniel Navarro-Urrios 1 , Alessandro Pitanti 1 , Romain Guider 1 , Lorenzo Pavesi 1 , Larysa Khomenkova 2 , Fabrice Gourbilleau 2 , Richard Rizk 2
1 Physics, University of Trento, Povo - Trento Italy, 2 , CIMAP, UMR CEA/CNRS 6176, Caen France

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4:30 PM - **D6.5/MM9.5
Optimum Coupling between Er Ions and Si Nanoclusters Sensitizers for High Performance Integrated Photonics.

Richard Rizk 1 , Julien Cardin 1 , Khalil Hijazi 1 , Larysa Khomenkova 1 , Fabrice Gourbilleau 1
1 CIMAP, CNRS, Caen France

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5:00 PM - D6.6/MM9.6
Sensitized Erbium Emission in Silicon Nanocrystals-based Superlattice Structures.

Rui Li 1 2 , Joe Warga 1 2 , Selcuk Yerci 1 2 , Luca Dal Negro 1 2
1 Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts, United States, 2 Photonics Center, Boston University, Boston, Massachusetts, United States

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5:15 PM - D6.7/MM9.7
Significant Improvement of Photoluminescence Intensity and Lifetime from Er3+ Ions Coupled to Si Clusters in Si-rich-SiO2 Layers.

Larysa Khomenkova, 1 , Fabrice Gourbilleau 1 , Christian Dufour 1 , Julien Cardin 1 , Richard Rizk 1
1 CIMAP, ENSICAEN, Caen Cedex 04 France

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5:30 PM - D6.8/MM9.8
Investigation of the Er3+ Location in Si-rich Silicon Oxide by 3D Atom Probe Tomography.

Etienne Talbot 1 , Rodrigue Larde 1 , Fabrice Gourbilleau 2 , Richard Rizk 2 , Philippe Pareige 1
1 , GPM - Université de Rouen - UMR CNRS 6634, Saint Etienne du Rouvray France, 2 , CIMAP, UMR CNRS 6252, ENSICAEN, Caen France

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5:45 PM - D6.9/MM9.9
Enhanced Erbium Near Infrared Emission in Doped Group IV Oxide Nanowires Using a GeOx Sensitizer.

Jeffery Coffer 1 , Ji Wu 1
1 Chemistry, Texas Christian University, Fort Worth, Texas, United States

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D7: Poster Session
Session Chairs
J. Zavada
Thursday AM, December 04, 2008
Exhibition Hall D (Hynes)

9:00 PM - D7.1
Luminescence Lifetime Thermometry in YSZ.

Matthew Chambers 1 , Vince Kispersky 1 , David Clarke 1
1 Materials Department, University of California, Santa Barbara, Santa Barbara, California, United States

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9:00 PM - D7.11
Electroluminescence from Erbium-Doped Amorphous Silicon Oxycarbide Thin Films.

Himani Suhag 1 , Vasilis Nikas 1 , Spyros Gallis 1 2 , Mengbing Huang 1 , Alain Kaloyeros 1
1 College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York, United States, 2 Semiconductor Research and Development Center, IBM Microelectronics, Hopewell Jct, New York, United States

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9:00 PM - D7.13
Rare-earth Doped Polymeric Gain Media for Visible Amplification.

Paula Russell-Hill 1 , Takeyuki Kobayashi 1 , Werner Blau 1
1 School of Physics, Trinity College Dublin, Dublin Ireland

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9:00 PM - D7.14
Increase in Excitation Efficiency of Er3+-Related 1.53μm Emission from Er2SiO5 Crystallite Embedded in SRSO.

Masaki Oe 1 , Yu Fujiwara 1 , Hideo Isshiki 1 , Tadamasa Kimura 1
1 , Univ.Electro Communication, Tokyo Japan

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9:00 PM - D7.15
Effects of Preparation Method and Doping Concentration on the Luminescent Properties of (Sb3+, Eu3+) Co-doped YBO3 Prepared using a Hydrothermal Method and a Solid-state Process.

Fushan Wen 1 , Jinhyeok Kim 2
1 College of Chemistry & Chemical Engineering, China University of Petroleum, Dongying, Shandong, China, 2 Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering , Chonnam National University, Kwangju Korea (the Republic of)

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9:00 PM - D7.16
Comparison of n-type Gd2O3 and Gd-doped HfO2 Electronic Structure.

Yaraslov Losovyj 1 2 , David Wooten 3 , Juan Colon-Santana 1 , N. Lozova 2 , James Petrosky 3 , A. Sokolov 1 , Jinke Tang 4 , Wendong Wang 4 , I. Ketsman 1 , Peter Dowben 1
1 Physics and Astronomy, University of Nebraska (Linicoln), Lincoln, Nebraska, United States, 2 Center for Advanced Microstructures and Devices, Louisiana State University, Baton Rouge, Louisiana, United States, 3 Physics and Nuclear Engineering, Air Force Institure of Technology, Wright Patterson Air Force Base, Ohio, United States, 4 Physics and Astronomy, University of Wyoming, Laramie, Wyoming, United States

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9:00 PM - D7.17
Photoluminescent Properties of Eu2+-activated M3MgSi2O8 (M=Ba,Sr,Ca).

Yoshinori Yonesaki 1 , Takahiro Takei 1 , Nobuhiro Kumada 1 , Nobukazu Kinomura 1
1 Interdisciplinary Graduate School of Medical and Engineering, University of Yamanashi, Kofu Japan

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9:00 PM - D7.18
Sensitized Luminescence from Rare Earth-Doped Nanocrystalline Titania Microspheres.

Jianfang Wang 1
1 Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR China

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9:00 PM - D7.19
Fabrication and Optical Property of Rare-earth Oxide-doped Synthetic Opals.

Tadashi Nakamura 1 , Yuri Yamada 1 , Hisashi Yamada 1 , Kazuhisa Yano 1
1 , Toyota Central R&D Labs., Inc., Aichi Japan

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9:00 PM - D7.2
Effects of Ultraviolet Light Irradiation on Photoluminescence of Ce Doped Silicate Glasses.

Arika Nakada 1 , Tetsuo Kishi 1 , Atsuo Yasumori 1
1 Department of Materials Science and Technology, Tokyo University of Science, Chiba Japan

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9:00 PM - D7.20
Strongly Enhanced Erbium Near-Infrared Emission in Dye-Loaded Nanoporous Materials.

Agnieszka Mech 1 , Angelo Monguzzi 1 , Francesco Meinardi 1 , Riccardo Tubino 1 , Jakub Mezyk 1
1 Dipartimento di Scienza dei Materiali, Università degli Studi di Milano- Bicocca, Milano, Lombardia, Italy

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9:00 PM - D7.4
Nd-Doped Gallium Oxide Thin Films Grown by Radiofrequency Magnetron Sputtering.

Céline Lecerf 1 , Philippe Marie 1 , Xavier Portier 1 , Fabrice Gourbilleau 1
1 CIMAP, ENSICAEN, Caen France

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9:00 PM - D7.5
Infrared Emission Properties of Ho Doped KPb2Cl5.

Olusola Oyebola 1 , Uwe Hommerich 1 , Sudhir Trivedi 2 , Althea Bluiett 3 , J. Zavada 4
1 , Hampton University, Hampton, Virginia, United States, 2 , Brimrose Corporation, Baltimore, Maryland, United States, 3 , Elizabeth City State University, Elizabeth City, North Carolina, United States, 4 , North Carolina State University, Raleigh, North Carolina, United States

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9:00 PM - D7.6
Correlation between Ferroelectric and Fluorescent Properties by introducing Eu Atoms into Strontium Bismuth Tantalate Films.

Koji Aizawa 1 , Yusuke Ohtani 1
1 OEDS R&D Center, Kanazawa Institute of Technology, Ishikawa Japan

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9:00 PM - D7.7
Energy Transfer from the Er3+ to Ge Nanocrystals During Electroluminescence in MOSLEDs.

Aloke Kanjilal 1 , Lars Rebohle 1 , Matthias Voelskow 1 , Wolfgang Skorupa 1 , Manfred Helm 1
1 Semiconductor Materials Division (FWIM), Forschungzentrum Dresden-Rossendorf (FZD), Dresden Germany

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