Meetings & Events

 

2007 MRS Spring Meeting Logo2007 MRS Spring Meeting & Exhibit


April 9-13, 2007
| San Francisco
Meeting Chairs: Timothy J. Bunning, Harold Y. Hwang, Debra Kaiser, Jennifer A. Lewis

Symposium I : Materials and Processes for Nonvolatile Memories

2007-04-10   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Yoshihisa Fujisaki Hitachi Ltd.
Jon Slaughter Freescale Semiconductor, Inc.
Dimitris Tsoukalas National Technical University
I1: Organic Nonvolatile Memories
Session Chairs
James Tour
Y. Yang
Tuesday AM, April 10, 2007
Room 3006 (Moscone West)

9:30 AM - **I1.1
Organic- and Bio-based Digital Memory Devices.

Yang Yang 1 2 3 , Ricky Tseng 1 3 , Liping Ma 1 2
1 Materials Sci. & Eng., UCLA, Los Angeles, California, United States, 2 California Nano System Institute, UCLA, Los Angeles, California, United States, 3 FENA Center, UCLA, Los Angeles, California, United States

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10:00 AM - I1.2
Memory Effect in Organic Diodes containing Self-assembled Gold Nanoparticles

Hai Ping Wang 1 , S. Pigeon 2 , R. Izquierdo 3 , R. Martel 1
1 Chimie, Université de Montréal , Montréal , Quebec, Canada, 2 Thin films and microfabrication laboratory, OLA Display Corp., Montréal , Quebec, Canada, 3 Département d'informatique, Université du Québec à Montréal, Montréal , Quebec, Canada

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10:15 AM - I1.3
Programmable Memory Devices Using Semiconducting Nanoparticles in Insulating Polymers.

Basudev Pradhan 1 , Sudip Batabyal 1 , Amlan Pal 1
1 Dept. of Solid State Physics, Indian Association for the Cultivation of Science, Kolkata, West Bengal, India

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10:30 AM - I1.4
Synthesis and Magnetism of 2D Mn(II) Carboxlates: Evidence of Remnant Moment at Room-Temperature

Shengming Liu 1 , Marshall Bremer 1 , Brandon Brandon 1 , John Lovaasen 1 , Anthony Caruso 1 , Douglas Schulz 1
1 Center for Nanoscale Science and Engineering, North Dakota State University, Fargo, North Dakota, United States

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10:45 AM - I1.5
Resistance Switching in Organic–Based Devices; Mechanism and Addressability Issues.

Fredrik Jakobsson 1 , Xavier Crispin 1 , Magnus Berggren 1
1 Department of Science and Technology, Linköping University, Norrköping Sweden

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11:00 AM -
BREAK

11:30 AM - **I1.6
Silicon/Molecule Hybrid Devices.

James Tour 1
1 , Rice University, Houston, Texas, United States

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12:00 PM - I1.7
Co Nanocyrstal Memory Devices Using Diblock Copolymer Micelle Templates

Chiyoung Lee 1 , Yongmu Kim 1 , Jang-Sik Lee 1 , Jaegab Lee 1 , Jeonghwa Kwon 2 , Byeong-Hyeok Sohn 2
1 School of Advanced Materials Engineering, Kookmin Univ., Seoul Korea (the Republic of), 2 Chemistry College of Natural Sciences, Seoul National Univ., Seoul Korea (the Republic of)

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12:15 PM - I1.8
Hierarchically Self-assembled Gold Nanoparticles in Polymer Matrix for Nonvolatile Memory.

Jung-Ah Choi 1 , Seong Jae Choi 2 , Sangkyu Lee 1 , Taeseup Song 1 , Chul Kim 1 , Jae-Young Choi 2 , Ungyu Paik 1
1 Division of Advanced Materials Science Engineering, Hanyang University, Seoul Korea (the Republic of), 2 Display Device & Material Lab, Samsung Advanced Institute of Technology, Yongin Korea (the Republic of)

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12:30 PM - I1.9
Organic Composite Submicron Rods for Memory Applications.

Ashavani Kumar 1 , Victor Pushparaj 1 , Saravanababu Murugesan 2 , Jin Xie 2 , Caterina Soldano 1 , George John 3 , Omkaram Nalamasu 1 , Ajayan Pulickel 1 , Robert Linhardt 2
1 Materials Science and Engg., Rensselaer Polytechnic Institute, troy, New York, United States, 2 Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 Department of Chemistry, City college of New York, New York, New York, United States

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12:45 PM - I1.10
Electrical Properties of CuTCNQ Based Organic Memories Targeting Integration in the CMOS Back End-of-line.

Robert Mueller 1 , Joris Billen 1 3 , Rik Naulaerts 1 3 , Olivier Rouault 1 4 , Ludovic Goux 2 , Dirk Wouters 2 , Jan Genoe 1 , Paul Heremans 1 3
1 MCP/PME, IMEC vzw., Leuven, Vlaams-Brabant, Belgium, 3 ESAT, KULeuven, Leuven, Vlaams-Brabant, Belgium, 4 , INSA Toulouse, Toulouse France, 2 SPDT/FE, IMEC vzw., Leuven, Vlaams-Brabant, Belgium

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I2: Nano-Particle and Advanced Flash Memories
Session Chairs
Erwin Prinz
Dimitris Tsoukalas
Tuesday PM, April 10, 2007
Room 3006 (Moscone West)

2:30 PM - **I2.1
Materials Challenges in Automotive Embedded Non-Volatile Memories.

Erwin Prinz 1
1 Technology Solutions Organization, Freescale Semiconductor, Austin, Texas, United States

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3:00 PM - I2.2
Formation of Ge Nanocrystals in Lu2O3 High-k Dielectric and its Application in Non-Volatile Memory Device

Mei Yin Chan 1 , Pooi See Lee 1
1 Materials Science and Engineering, Nanyang Technological University Singapore, Singapore Singapore

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3:30 PM - I2.4
Floating Nanodot Gate Memory Fabrication with Biomineralized Nanodot as Charge Storage Node.

Atsushi Miura 1 , Yukiharu Uraoka 1 , Takashi Fuyuki 1 , Ichiro Yamashita 1 2
1 Graduate School for Materials Science, Nara Institute for Science and Technology, Ikoma Japan, 2 , JST, Kawaguchi Japan

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3:45 PM - I2.5
Self-aligned TiSi2/Si Hetero-nanocrystal Floating Gate Nonvolatile Memory

Yan Zhu 1 , Bei Li 1 , Jianlin Liu 1
1 EE Department, University of California, Riverside, Riverside, California, United States

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4:00 PM -
BREAK

4:30 PM - I2.6
Temperature Dependence of Hole and Electron Conductance in Silicon Nanocrystal Arrays in SiO2

Gerald Miller 1 , Tao Feng 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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4:45 PM - I2.7
Magnetic Resonance Studies of Silicon Nano-Crystal Flash Memory Structures.

Jason Ryan 1 , Patrick Lenahan 1 , Lucky Vishnubhotla 2 , Sherry Straub 2 , Muralidhar Ramachandran 2 , Rajesh Rao 2 , Tushar Merchant 2 , Peter Kuhn 2
1 Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, United States, 2 , Freescale Semiconductor, Austin, Texas, United States

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5:00 PM - I2.8
Charging Model of a Si Nanocrystal-based Floating Gate in a Quantum Flash Memory.

Yann Leroy 1 , Anne-Sophie Cordan 1 , Bertrand Leriche 1 , Daniel Mathiot 1
1 Solid State Electronics, InESS-ENSPS, Illkirch France

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5:15 PM - I2.9
Charge-trap Flash Memory by Partially-oxidized Amorphous Si Containing Nanodots.

Sangjin Park 1 , Daigil Cha 1 , Kwang Soo Seol 1 , Sangmin Shin 1 , Sangmoo Choi 1 , JungHun Sung 1 , Yoondong Park 1 , Joong Jeon 1 , InKyeong Yoo 1 , Eunha Lee 2 , Yo-Sep Min 3
1 Semiconductor device and material lab, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of), 2 AE center, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of), 3 Nano Fabrication Technology Center, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of)

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5:30 PM - I2.10
Multi-Bit Localized Charge Trapping Memories – Device Scaling of Twin Flash Cells to a 60nm Generation.

Torsten Mueller 1 , Ch. Kleint 1 , M. Isler 1 , S. Riedel 1 , T. Hoehr 1 , M. Strassburg 1 , F. Beug 1 , V. Pissors 1 , J. Sachse 1 , D. Manger 1 , D. Caspary 1 , S. Parascandola 1 , D. Olligs 1 , H. Boubekeur 1 , F. Heinrichsdorf 1 , V. Polei 2 , J. Gupta 1 , D. Pritchard 1 , U. Bewersdorff-Sarlette 1 , M. Verhoeven 1 , M. Markert 1 , Ch. Ludwig 1 , E. Stein v. Kamienski 1 , Th. Mikolajick 3 , N. Nagel 1
1 , Qimonda, Dresden Germany, 2 , Infineon Technologies, Dresden Germany, 3 Chair of Electronic- and Sensor Materials, Technical University of Technology and Mining, Freiberg Germany

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5:45 PM - I2.11
Self-Organization of Ge Nanocrystals on FIB Patterned Substrates for Memory Applications

Isabelle Berbezier 1 , Alim Karmous 1 , Pierre-David Szkutnik 1 , Antoine Ronda 1
1 L2MP, CNRS, Marseille France

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I3: Poster Session: Organic and Nano-particle Flash Memories
Session Chairs
Dimitris Tsoukalas
Y. Yang
Tuesday PM, April 10, 2007
Salon Level (Marriott)

9:00 PM - I3.1
Making Plastic Remember: Electrically Rewritable Polymer Memory Devices.

Dominic Prime 1 , Shashi Paul 1
1 Emerging Technologies Research Centre, De Montfort University, Leicester, Leicestershire, United Kingdom

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9:00 PM - I3.10
Oxide-nitride-oxide Dielectric Stacks with Embedded Si-nanoparticles Fabricated by Low-energy Ion-beam-synthesis.

Vassilis Ioannou-Sougleridis 1 , Caroline Bonafos 2 , S. Schamm 2 , G. Ben-Assayag 2 , P. Dimitrakis 2 , V. Vamvakas 2 , P. Normand 2 , Dimitris Tsoukalas 3
1 , IMEL/NCSRD, Aghia Paraskevi Greece, 2 , CEMES/CNRS, Toulouse France, 3 Applied Sciences, National Technical University, Athens Greece

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9:00 PM - I3.11
The Study on Charge-trapping Mechanism in Nitride Storage Flash Memory Device.

Jia-Lin Wu 1 , Hua-Ching Chien 1 , Chi-Kuang Chang 1 , Chien-Wei Liao 1 , Chih-Yuan Lee 1 , Je-Chuang Wang 1 , Yung-Fang Chen 2 , Chin-Hsing Kao 1
1 Semiconductor Laboratory, Chung-Cheng Institute of Technology, National Defense University, Taoyuan Taiwan, 2 Department of Physics, National Taiwan University, Taipei Taiwan

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9:00 PM - I3.12
A Comparison of N+ type and P+ type Polysilicon Gate in High Speed Non-Volatible Memories

Moon Kyung Kim 1 , Soodoo Chae 2 , Chungwoo Kim 2 , Sandip Tiwari 1
1 Electrical and Computer Eng., Cornell University, Ithaca, New York, United States, 2 Semiconductor R&D Center, Samsung Electronics, Kiheung Korea (the Republic of)

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9:00 PM - I3.13
The Effects of the LDD process on Short-channel effects in Nano-scale Charge Trapping Devices.

Moon Kyung Kim 1 , Soodoo Chae 2 , Chungwoo Kim 2 , Jooyeon Kim 3 , Sandip Tiwari 1
1 Electrical and Computer Eng., Cornell University, Ithaca, New York, United States, 2 Semiconductor R&D Center, Samsung Electronics Co, Kiheung Korea (the Republic of), 3 School of Electricity & Electronics, Ulsan college, Ulsan Korea (the Republic of)

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9:00 PM - I3.14
Silicon Compatible Nonlinear Dielectric as Tranistor Gate for use as Nonvolatile Memory Element.

Joseph Cuchiaro 1 , Edwin Dons 1 , Jie Yao 1 , S. Sun 1 , Catherine Rice 1 , Lloyde Provost 1 , Gary Tompa 1
1 , Structured Materials Industries, Inc., Piscataway, New Jersey, United States

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9:00 PM - I3.16
Effect of AlON Thin Films as Top Blocking Oxide for NVM.

Kyungsoo Jang 1 , Sunghyun Hwang 1 , Kwangsoo Lee 1 , Jeoungin Lee 1 , Hyungjune Park 1 , Seongwook Jeong 1 , Junsin Yi 1 , Ho-kyoon Chung 2 , Byoung-Deog Choi 2 , Ki-yong Lee 2
1 , SungKyunKwan University, Suwon Korea (the Republic of), 2 , Samsung SDI Co, Ltd., Gyeonggi-do Korea (the Republic of)

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9:00 PM - I3.17
Synthesis and Non-volatile Memory Behavior of Redox Active Conjugated Polymer Containing Ferrocene Unit

Tae-Lim Choi 1 , Kwang-Hee Lee 2 , Won-Jae Joo 2 , Sangkyun Lee 2
1 Electronic Chemical Material Division, Cheil Industries, Inc, Uiwang-si, Gyunggi-do, Korea (the Republic of), 2 Display Device and Material Lab, Samsung Advanced Institute of Technology, Yongin-si, Gyunggi-do, Korea (the Republic of)

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9:00 PM - I3.18
Material Properties of Mixed Polymer and Gold Nanoparticles Structure for Memory Applications

Yan Song 1 , Qidan Ling 2 , Siew Lay Lim 2 , Eric Yeow Hwee Teo 1 , Yoke Ping Tan 1 , En-Tang Kang 2 , Daniel Siu Hung Chan 1 , Chunxiang Zhu 1
1 Electrical and Computer Engineering, National University of Singapore, Singapore Singapore, 2 Chemical and Biomolecular Engineering, National University of Singapore, Singapore Singapore

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9:00 PM - I3.2
Memory Effect in Ferroelectric PVDF Copolymer Integrated MOS Structure for Nondestructive Readout Memory Devices.

Sang-Hyun Lim 1 , Rastogi Alok 1 , Seshu Desu 1
1 Electrical and Computer Engineering, Univ. of Massachusetts, Amherst , Massachusetts, United States

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9:00 PM - I3.3
Nonvolatile Memory Characteristics of Si-nanocrystal Floating-gate MOSFETs Fabricated by Using 0.5 μm CMOS Standard Processes.

Min Choul Kim 1 , Yong Min Park 1 , Sung Kim 1 , Suk-Ho Choi 1 , Kyung Joong Kim 2
1 College of Electronics and Information, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of), 2 Division of Advanced Technology, Korea Research Institute of Standards and Science, Taejon Korea (the Republic of)

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9:00 PM - I3.4
Silicon Nanocluster Formation by a Pulse-type Gas Feeding Technique in the LPCVD System for the Nonvolatile Memory Applications.

Kyongmin Kim 1 , Eunkyeom Kim 1 , Myeongwook Bae 2 , Daeho Son 1 , Juhyung Lee 1 , Moonsup Han 2 , Junghyun Sok 1 , Kyoungwan Park 1
1 Dept. of Nano Science and Technology, University of Seoul, Seoul Korea (the Republic of), 2 Dept. of Physics, University of Seoul, Seoul Korea (the Republic of)

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9:00 PM - I3.5
The Optical and Electrical Properties of SiOx (x<2) Thin Films Prepared by Pulsed Laser Deposition Technique.

Byoung Youl Park 1 , Sol Lee 1 , Chang Hyun Bae 2 , Seung Min Park 2 , Kyoungwan Park 1
1 Dept. of Nano Science and Technology, University of Seoul, Seoul Korea (the Republic of), 2 Dept. of Chemistry, Kyung Hee University, Seoul Korea (the Republic of)

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9:00 PM - I3.6
Nonvolatile Memory Device Based On Nanoparticle Functionalized Tobacco Mosaic Virus.

Chunglin Tsai 1 , Ricky Tseng 2 , Liping Ma 2 , Yang Yang 2 , Cengiz Ozkan 3
1 Electrical Engineering, University of California Riverside, Riverside, California, United States, 2 Material Science and Engineering, University of California Los Angeles, Los Angeles, California, United States, 3 Mechanical Engineering, University of California Riverside, Riverside, California, United States

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9:00 PM - I3.7
A Low-voltage-operative Nanocrystal Memory Made with High-k Control Oxide.

Chen Chan Wang 1 , Chun-Sheng Liang 1 , Jiun-Yi Tseng 1 , Tai-Bor Wu 1
1 Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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9:00 PM - I3.8
Deposition of Uniform Size Metallic Nanoparticles for use in Non Volatile Memories

Emanuele Verrelli 1 , Dimitris Tsoukalas 1 , Konstantinos Giannakopoulos 2 , Dimitris Ioannou 3
1 Physics, National Technical University of Athens, Athens, Attikis, Greece, 2 Institute of Material Science, NCSR Demokritos, Aghia Paraskevi, Attikis, Greece, 3 Electrical Engineering, George Mason University, Fairfax, Virginia, United States

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9:00 PM - I3.9
Characteristic of Tellurium films by Remote Plasma Atomic Layer Deposition

Do-Heyoung Kim 2 3 , Hun Jung 1 3 , Yeon-Hong Kim 1 3 , June-Key Lee 4
2 School of Applied Chemical Engineering, Chonnam National University, Kwangju Korea (the Republic of), 3 BK21 Division of Functional nano-novel chemical materials, Chonnam National University, Kwangju Korea (the Republic of), 1 Department of Fine Chemical Engineering, Chonnam National University, Kwangju Korea (the Republic of), 4 School of Materials Science & Engineering, Chonnam National University, Kwangju Korea (the Republic of)

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2007-04-11   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Yoshihisa Fujisaki Hitachi Ltd.
Jon Slaughter Freescale Semiconductor, Inc.
Dimitris Tsoukalas National Technical University
I4: Resistive Switching Non-volatile Memories I
Session Chairs
Alex Ignatiev
Tingkai Li
Wednesday AM, April 11, 2007
Room 3006 (Moscone West)

9:30 AM - **I4.1
RRAM electronics and Switching Mechanism

ShengTeng Hsu 1 , Tingkai Li 1
1 5, Sharp Laboratories of America, Camas, Washington, United States

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10:00 AM - I4.2
Direct Observation of Conducting Filament of a Few Nanometer Sizes in NiO Thin Film by Conducting Atomic Force Microscopy Under High Vacuum Condition.

Sejin Kim 1 , Jung-Bin Yun 1 , Changdeuck Bae 1 , Sunae Seo 2 , Myoung-Jae Lee 2 , Dong-Chul Kim 2 , Seung-Eon Ahn 2 , In-Kyeong Yoo 2 , Hyunjung Shin 1
1 School of Advanced Materials Engineering, Kookmin University, Seoul Korea (the Republic of), 2 Semiconductor Device & Material Lab., Samsung Advanced Institute of Tech., Seoul Korea (the Republic of)

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10:15 AM -
I4.3 Transferred to I7.13

10:30 AM - I4.4
Electrode Influence on the Resistive Switching at SrRuO3/Cr-doped SrZrO3/metal Junctions.

Hwan-Soo Lee 1 , Sukwon Choi 2 , Paul Salvador 2 , James Bain 1
1 Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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10:45 AM - I4.5
Nonvolatile Resistive Switching Devices Based on Nanoscale Metal/Amorphous Silicon/Crystalline Silicon Junctions

Sung Hyun Jo 1 , Wei Lu 1
1 EECS, University of Michigan, Ann Arbor, Michigan, United States

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11:00 AM -
BREAK

12:00 PM - I4.7
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in a Pt/TiO2/Pt Thin Film Stack.

Doo Seok Jeong 1 , Herbert Schroeder 1
1 Institute of solid state research, Research center Juelich, Juelich, NRW, Germany

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12:15 PM - I4.8
New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction.

Yasuhisa Naitoh 1 2 , Masayo Horikawa 1 , Tetsuo Shimizu 1
1 NRI, AIST, Tsukuba Japan, 2 , PRESTO-JST, Kawaguchi Japan

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12:30 PM - I4.9
Nonvolatile Memory Effects of Ti Oxide Thin Films by a Plasma-enhanced Atomic Layer Deposition.

Min Ki Ryu 1 , Hu Yonng Jeong 1 , Lee-Eun Yu 2 , Yang-Kyu Choi 2 , Sung-Yool Choi 1
1 Nano-Bio-Electronic Devices Team, ETRI, Daejeon Korea (the Republic of), 2 Dept. of Electrical Engineering and Computer Science, KAIST, Daejeon Korea (the Republic of)

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12:45 PM -
I4.10 Transferred to I7.14

I5: Resistive Switching Non-volatile Memories II
Session Chairs
A. Grishin
M. Kozicki
Wednesday PM, April 11, 2007
Room 3006 (Moscone West)

2:30 PM - **I5.1
Memory Devices Based on Solid Electrolytes.

Michael Kozicki 1
1 Center for Applied Nanoionics, Arizona State University, Tempe, Arizona, United States

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3:00 PM - I5.2
Resistance Switching In Ferroelectric Materials.

Tingkai Li 1 , Sheng Teng Hsu 1
1 , Sharp Labs of America, Inc., Camas, Washington, United States

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3:15 PM - I5.3
Electric Pulse Induced Programmable Resistance Change in Oxide Films

Alex Ignatiev 1 , Naijuan Wu 1 , Xin Chen 1 , Yibo Nian 1 , Christina Papagianni 1 , John Strozier 1
1 Center for Advanced Materials, University of Houston, Houston, Texas, United States

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3:30 PM - I5.4
Scanning Resistive Probe Microscopy: A New Electric Field Sensor as R/W Head for Non-volatile Storage Devices.

Kyunghee Ryu 1 , Hyunjung Shin 1 , Hyoungsoo Ko 2 , Seungbum Hong 2 , Chulmin Park 2 , Yongkwan Kim 2 , Sung-Hoon Choa 2 , Ho Nyung Lee 3
1 School of Advanced Materials Engineering, Kookmin University, Seoul Korea (the Republic of), 2 Semiconductor Device and Material Lab, Samsung Advanced Institute of Technology, Kyunggi-do Korea (the Republic of), 3 Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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3:45 PM - I5.5
Femtosecond Laser Structuring of As2S3 Glass for Erasable and Permanent Optical Memory.

Andrei Rode 1 , Saulius Juodkazis 2 , Toshiaki Kondo 2 , Hiroaki Misawa 2 , Eugene Gamaly 1 , Marek Samoc 1 , Barry Luther-Davies 1
1 Laser Physics Centre, RSPhysSE, The Australian National University, Canberra, Australian Capital Territory, Australia, 2 Nanotechnology Center, Hokkaido University, Sapporo Japan

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4:00 PM -
BREAK

I6: Ferroelectric Non-volatile Memories I
Session Chairs
H. Ishiwara
Wednesday PM, April 11, 2007
Room 3006 (Moscone West)

4:30 PM - **I6.1
ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On/off Current Ratio.

Eisuke Tokumitsu 1 , Tomofumi Fujimura 1 , Takashi Sato 1
1 Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama Japan

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5:00 PM - I6.2
No Interfacial Layer for PEDOT Electrodes on PVDF:Characterization of Reactions at the Interface P(VDF/TrFE)/Al and P(VDF/TrFE)/PEDOT:PSS.

Klaus Mueller 1 , Dipanka Mandal 1 , Dieter Schmeisser 1
1 , BTU Cottbus, Cottbus Germany

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5:15 PM - I6.3
Large Ferroelectricity of Thin Poly (vinylidene fluoride-trifluoroethylene) Copolymer Films Suitable for Non-Volatile Memory Applications

Sumiko Fujisaki 1 , Yoshihisa Fujisaki 2 , Hiroshi Ishiwara 1
1 Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama Japan, 2 Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan

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5:30 PM - I6.4
Oxygen Bonding in Bismuth Layered Compounds SrBi2Ta2O9.

Dong Su 1 , Nan Jiang 1 , Jianguo Wen 2 , Jianshe Liu 3
1 Department of Physics, Arizona State Universtiy, Tempe, Arizona, United States, 2 Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States, 3 Institute of Microelectronics, Tsinghua University, Beijing China

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5:45 PM - I6.5
Dielectric Characteristics of Donor Doped Nonlead Ba(Cu1/3Nb2/3)O3 Perovskite Material Synthesized by Microwave-assisted Citrate-nitrate Sol-gel Route.

Alp Manavbasi 1 , Jeffrey LaCombe 1
1 Materials Science & Engineering, University of Nevada, Reno, Reno, Nevada, United States

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I7: Poster Session: Resistive Switching and Ferroelectric Memories I
Session Chairs
Tingkai Li
Eisuke Tokumitsu
Wednesday PM, April 11, 2007
Salon Level (Marriott)

9:00 PM - I7.1
Metal Organic Chemical Vapor Deposition of Titanium Dioxide Thin Films for Applications of Resistive Switching Characteristics.

Ying-Ching Zhang 1 , Yun-Shan Lo 1 , Tai-Bor Wu 1
1 Materials Science and Engineering, National Tsing-Hua University, Hsin-Chu Taiwan

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9:00 PM - I7.11
The Microstructure and C-V Characterization for Lanthanum-doped Bi4Ti3O12 Ferroelectric Memory Capacitors Based on MFS and MFIS Structures

Dan Xie 1 , Tianling Ren 1 , Litian Liu 1
1 , Institute of Microelectronics, Tsinghua University, Beijing China

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9:00 PM - I7.12
Preferred Orientation Control and Electrical Properties of Sputtered BiFeO3 Thin Films.

Chia-Ching Lee 1 , JennMing Wu 1
1 , National Tsing Hwa Unervisty, Taiwan, R.O.C., Hsinchu Taiwan

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9:00 PM - I7.13
Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures.

Dashan Shang 1 2 , Lidong Chen 1 , Qun Wang 1 , Zihua Wu 1 , Wenqing Zhang 1 , Xiaomin Li 1
1 , Shanghai Institute of Ceramics, CAS, Shanghai China, 2 , Graduate School of Chinese Academy of Sciences, Beijing China

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9:00 PM - I7.14
Optical, Structural and Surface Properties of Silicon Dioxide Films Doped with Terbium.

Zhe Feng 1 , S. Lien 1 , C. Huang 1 , L. Cheng 1 , P. Huang 1 , Ting Li 2
1 Electrical Engineering, National Taiwan University , Taipei Taiwan, 2 , Sharp Labs of America, Inc., Camas, Washington, United States

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9:00 PM - I7.3
Effects of SrRuO3 Buffer Layers in Enhancing Resistance Change of Ag/Pr0.7Ca0.3MnO3/Pt Heterostructure.

Seungwoo Han 1 , Junghyun Sok 1 , Kyungwan Park 1 , Wanshik Hong 1 , Sanghyun Joo 1 , Yunsun Park 2
1 Department of Nano Science and Technologies, Univ. of Seoul, Seoul, Seoul, Korea (the Republic of), 2 Department of Industrial and Systems Engineering, Myongji university, Yong-in, kyunggi-do, Korea (the Republic of)

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9:00 PM - I7.4
HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition.

Pang Shiu Chen 1 , Heng-Yuan Lee 2 , Ching-Chiun Wang 2 , Ming-Jinn Tsai 2 , Kou Chen Liu 3
1 Materials Science and Engineering, MingShin University of Science and Technology, Hsin Chu Taiwan, 2 Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, HsinChu Taiwan, 3 Graduate Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan Taiwan

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9:00 PM - I7.5
Characteristics of (Pr,Ca)MnO3 Thin Films on LaNiO3-electrodized Si Substrate for Nonvolatile Resistance Random Access Memory(RRAM) Application

Cheng-Wei Wu 1 , Wen-Yuan Chang 1 , Tai-Bor Wu 1
1 , National Tsing-Hua University, Hsinchu Taiwan

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9:00 PM - I7.6
Study of Effect of Metal/semiconductor Interfaces Properties on Resistance Switching Device.

M. Villafuerte 1 , G. Juarez 1 , Silvia Heluani 1 , G. Braunstein 3 , D. Comedi 2 , F. Golmar 4
1 Dto. de Física, Universidad Nacional de Tucuman, Tucuman, San Miguel de Tucuman, Argentina, 3 , University of Central Florida, Orlando, Florida, United States, 2 , CONICET, Tucumán Argentina, 4 , Universidad de Buenos Aires, Buenos Aires Argentina

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9:00 PM - I7.7
Influence of Bottom Electrode on the Characteristics of PrCaMnO Thin Film

Young-Sun Kim 1 , Sung-Geun Kang 1 , Seung-Won Lee 1 , Won-Jun Lee 1
1 Department of Advanced Materials Engineering, Sejong University, Seoul Korea (the Republic of)

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9:00 PM - I7.8
Reproducible Resistance Switching in Ni/NiO/Ni Trilayer.

Hisashi Shima 1 , Fumiyoshi Takano 1 , Hiro Akinaga 1 , Isao Inoue 2 , Hide Takagi 2 3
1 Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, 2 Correlated Electron Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, 3 Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba, Japan

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9:00 PM - I7.9
A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM.

Kentaro Kinoshita 1 , Yuichi Yamazaki 1 , Hideyuki Noshiro 1 , Takashi Iizuka 1 , Chikako Yoshida 1 , Yoshihiro Sato 1 , Masaki Aoki 1 , Yoshihiro Sugiyama 1
1 , Fujitsu Laboratories Ltd., Atsugi, Kanagawa, Japan

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2007-04-12   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Yoshihisa Fujisaki Hitachi Ltd.
Jon Slaughter Freescale Semiconductor, Inc.
Dimitris Tsoukalas National Technical University
I8: Ferroelectric Non-volatile Memories II
Session Chairs
Xu Jianbin
Eisuke Tokumitsu
Thursday AM, April 12, 2007
Room 3006 (Moscone West)

9:45 AM - **I8.1
Ferroelectric Thin Films Investigated by Piezoresponse Force Microscopy.

Huizhong Zeng 1 2 , S. Lu 1 , J. Liu 1 , W. Huang 1 , Y. Li 1 , Jianbin Xu 2 , H. Guo 2
1 State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu China, 2 Department of Electronic Engineering, and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong China

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10:15 AM - I8.2
Comparative Study of Pb(Zr,Ti)O3/Electrode Interface Layer Engineering of Ferroelectric Random Access Memory Capacitors with Pt and IrO2 Top Electrodes

Ye (Mike) Chen 1 , Paul McIntyre 1
1 , Stanford University, Stanford, California, United States

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10:30 AM - I8.3
Nanosecond Separation of Domain Nucleation and Propagation in Thin Ferroelectric Films.

Alexei Grigoriev 1 , Rebecca Sichel 1 , Dal-Hyun Do 1 , Dong Min Kim 1 , Chang-Beom Eom 1 , Bernhard Adams 2 , Eric Dufresne 2 , Paul Evans 1
1 , University of Wisconsin-Madison, Madison, Wisconsin, United States, 2 Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois, United States

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10:45 AM - I8.4
Nanoscale Ferroelectric Domain Reading and Writing Using High Speed Piezo Force Microscopy for Memory Device Applications.

Ramesh Nath 1 , David Shuman 1 , Ying-Hao Chu 2 , Ramamoorthy Ramesh 2 , Bryan Huey 1
1 Chemical, Materials and Biomolecular Engineering, University of Connecticut, Storrs, Connecticut, United States, 2 Materials Science and Engineering, University of California, Berkeley, Berkeley, California, United States

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11:00 AM -
BREAK

11:30 AM - **I8.5
Recent Researches for Realizing High-Density Ferroelectric Memories

Hiroshi Ishiwara 1
1 Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan

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12:00 PM - I8.6
Conduction Mechanisms of BiFeO3 Thin Films.

Hao Yang 1 , M. Jain 1 , B. Kang 1 , Y. Li 1 , R. DePaula 1 , Q. Jia 1
1 , Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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12:15 PM - I8.7
Investigation of Magnetic Behaviour of Mechanical Activation Derived Multiferroic BiFeO3

Ashish Garg 1 , Thota Harikishan 1 , Brajesh Pandey 2 , Harish Verma 2
1 Department of Materials and Metallurgical Engineering, Indian Institute of Technology Kanpur, Kanpur, U.P., India, 2 Department of Physics, Indian Institute of Technology Kanpur, Kanpur, U.P., India

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12:30 PM - I8.8
Sol-gel Synthesis and Characterization of Multiferroic BiFeO3-PbTiO3 Thin Films

Soumya Kar 1 , Anju Dixit 2 , Ashish Garg 1 , D. Agrawal 2
1 Department of Materials and Metallurgical Engineering, Indian Institute of Technology Kanpur, Kanpur, 0, India, 2 Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur, U.P., India

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12:45 PM - I8.9
Biaxial Stress-Induced Domain Wall Motion at Room Temperature in Polycrystalline Lead Zirconium Titanate Thin Films

Ricardo Zednik 1 , Paul McIntyre 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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I9/J7: Joint Session: MRAM Materials and Devices
Session Chairs
Dan Ralph
Jon Slaughter
Thursday PM, April 12, 2007
Room 3006 (Moscone West)

2:30 PM - **I9.1/J7.1
Advancements In Writing Technology For Dense MRAM

Hiroaki Yoda 1
1 R&D center, Toshiba, Kawasaki Japan

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3:00 PM - **I9.2/J7.2
Materials and Device Technology of Toggle Magnetic Random Access Memory.

Jason Janesky 1 , N. Rizzo 1 , M. Deherrera 1 , K. Smith 1 , K. Nagel 1 , M. Martin 1 , J. Craigo 1 , J. Sun 1 , J. Slaughter 1 , B. Engel 1 , G. Grynkewich 1 , M. Durlam 1
1 Technology Solutions Organization, Freescale Semiconductor, Chandler, Arizona, United States

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3:30 PM - I9.3/J7.3
Thermally Stable and Scalable Magnetic Structure for High Density Magnetic Random Access Memory

Hao Meng 1 , Jian-Ping Wang 1
1 Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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3:45 PM - I9.4/J7.4
Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon.

Mehdi Kanoun 1 , Rabia Benabderrahmane 1 , Christophe Duluard 1 , Bsiesy Ahmad 1 2 , Claire Baraduc 1 , Nicolas Bruyant 1 , Herve Achard 3 , Antoine Filipe 4
1 SPINTEC, CEA, Grenoble France, 2 , Université Joseph fourrier, Grenoble France, 3 , CEA/LETI, Grenoble France, 4 , Spintron, Marseille France

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4:00 PM -
BREAK

4:30 PM - **I9.5/J7.5
Manipulating Nanomagnets Using Spin-Transfer Torques.

Dan Ralph 1
1 Physics Department, Cornell University, Ithaca, New York, United States

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5:00 PM - I9.6/J7.6
Low-RA MgO Tunnel Junctions for SMT- MRAM

Renu Dave 1 , P. Mather 1 , F. Mancoff 1 , N. Rizzo 1 , B. Butcher 1 , J. Slaughter 1
1 , Freescale Semiconductor, Inc, Chandler, Arizona, United States

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5:15 PM - I9.7/J7.7
Interfacial Oxide and Barrier Engineering in MgO Based Magnetic Tunnel Junctions.

John Read 1 , Phillip Mather 2 , Robert Buhrman 1
1 , Cornell University, Ithaca, New York, United States, 2 , Freescale Semiconductor, Inc., Chandler, Arizona, United States

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5:30 PM - I9.8/J7.8
Defect-Mediated Properties of Magnetic Tunnel Junctions.

Julian Velev 1 , Kirill Belashchenko 1 , Sitaram Jaswal 1 , Evgeny Tsymbal 1
1 Department of Physics, University of Nebraska, Lincoln, Nebraska, United States

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5:45 PM - I9.9/J7.9
Magnetic Junctions Exhibiting Spin Filter and Magnetic Tunnel Junction Behavior as a Function of Temperature.

Brittany Nelson-Cheeseman 1 , Rajesh Chopdekar 2 1 , Joanna Bettinger 1 , Yayoi Takamura 1 , Elke Arenholz 3 , Yuri Suzuki 1
1 Materials Science and Engineering, University of California - Berkeley, Berkeley, California, United States, 2 School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States, 3 , Advanced Light Source, Lawrence Berkeley National Lab, Berkeley, California, United States

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I10: Poster Session: Phase Change Volatile Memories I
Session Chairs
Karen Attenborough
Yoshihisa Fujisaki
Thursday PM, April 12, 2007
Salon Level (Marriott)

9:00 PM - I10.1
Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material

Zhe Wu 1 , Su Youn Lee 1 , Jeung-hyun Jeong 1 , In Ho Kim 1 , Seul Cham Kim 2 , Kyu Hwan Oh 2 , Byung-ki Cheong 1
1 , Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 , Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - I10.11
Characteristics of N-doped Sb2Te3 Films by X-ray Diffraction and Resistance Measurement for Phase-change Memory.

You Yin 1 , Naoya Higano 1 , Kazuhiro Ohta 2 , Akihira Miyachi 1 , Masahiro Asai 1 , Daisuke Niida 1 , Hayato Sone 1 , Sumio Hosaka 1
1 Department of Nano-Material Systems, Gunma University, Kiryu, Gunma, Japan, 2 Department of Electronic Engineering, Gunma University, Kiryu, Gunma, Japan

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9:00 PM - I10.12
Ge Doped Ge2Sb2Te5 Films as Multilevel Storage Media for PCRAM.

Kin-Fu Kao 1 , Huai-Yu Cheng 1 , Chi-Jui Lan 1 , Tsung-Shune Chin 1
1 , Department of Materials Science and Engineering, National Tsing Hua University, HsinChu Taiwan

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9:00 PM - I10.13
Changes in the Chemical States and Optical Bandgap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during Phase Transition

Youngkuk Kim 1 , Uk Hwang 2 , M. Cho 1 , H. Park 2
1 Institute of Physics and Applied Physics, Yonsei University , Seoul, 120-749, Korea (the Republic of), 2 Div.of Advan. Tech., Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of)

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9:00 PM - I10.2
Temperature Dependence of Phase Change Memory Cell on Film Thickness of Phase Change Layer

Xiangshui Miao 1 , Luping Shi 1 , Hock Koon Lee 1 , Kian Guan Lim 1 , Hongxin Yang 1 , Jianming Li 1 , Rong Zhao 1 , Tow Chong Chong 1
1 , Data Storage Institute, Singapore Singapore

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9:00 PM - I10.3
Characteristic of Sb Thin Film Deposited by PEALD.

Yeon-Hong Kim 2 3 , Hun Jung 2 3 , June Key Lee 4 , Do-Heyoung Kim 1 3
2 Department of Fine Chemical Engineering, Chonnam National University, Gwangju Korea (the Republic of), 3 BK21 Division of Functional nano-novel chemical materials, Chonnam National University, Gwangju Korea (the Republic of), 4 Department of Materials Science & Engineering, Chonnam National University, Gwangju Korea (the Republic of), 1 School of Applied Chemical Engineering, Chonnam National University, Gwangju Korea (the Republic of)

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9:00 PM - I10.4
Solution Processing – A Low Tech Route to Chalcogenide Phase Change Materials.

Delia Milliron 1 , Simone Raoux 1 , David Mitzi 2 , Andrew Kellock 1 , Robert Shelby 1 , Martha Sanchez 1 , Janette Bunten 1 , Jean Jordan-Sweet 1
1 , IBM Almaden Research Center, San Jose, California, United States, 2 , IBM Watson Research Center, Yorktown Heights, New York, United States

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9:00 PM - I10.5
Analysis of Nucleation and Growth Processes in the Amorphous to fcc Transition of Ge2Sb2Te5.

Stefania Privitera 1 , Salvatore Lombardo 2 , Corrado Bongiorno 2 , Emanuele Rimini 2 4 , Agostino Pirovano 3
1 R&D, STMicroelectronics, Catania Italy, 2 IMM, CNR, Catania Italy, 4 Physics Department, University of Catania, Catania Italy, 3 FTM Advanced R&D, STMicroelectronics, Agrate (Mi) Italy

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9:00 PM - I10.6
Calculation of Threshold Voltage in Phase Change Memory Cells.

Edward Voronkov 1
1 Semiconductor Electronics, Moscow Power Engineering Institute, Moscow Russian Federation

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9:00 PM - I10.7
Hard x-ray Photoelectron Spectroscopy of Amorphous and Crystalline GeTe-Sb2Te3 Pseudo-binary Compound.

Jung-Jin Kim 1 , Keisuke Kobayashi 1 2 , Toshiyuki Matsunaga 3 , Kouichi Kifune 5 , Eiji Ikenaga 1 , Masaaki Kobata 1 , Shigenori Ueda 1 , Rie Kojima 4 , Noboru Yamada 4
1 , JASRI/SPring-8, Hyogo Japan, 2 , NIMS/SPring-8, Hyogo Japan, 3 , Matsushita Techno Research, Osaka Japan, 5 , Osaka Prefecture University, Osaka Japan, 4 , Matsushita Electric Industrial Company, Osaka Japan

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9:00 PM - I10.8
Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films.

Edwin Dons 1 , Catherine Rice 1 , Gary Tompa 1
1 , Structured Materials Industries, Inc., Somerset, New Jersey, United States

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9:00 PM - I10.9
Adhesion of Crystalline GeSbTe/TiN Interface Characterized by Four Point Bend, Nanoindentation, and Nanoscratch.

Guohua Wei 1 , Jun Liu 2 , David Fillmore 1 , Mike Violette 2 , Shifeng Lu 1
1 Surface Analysis Laboratory, Micron Technology, Inc., Boise, Idaho, United States, 2 R & D Department, Micron Technology, Inc., Boise, Idaho, United States

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2007-04-13   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Yoshihisa Fujisaki Hitachi Ltd.
Jon Slaughter Freescale Semiconductor, Inc.
Dimitris Tsoukalas National Technical University
I11: Phase Change Non-volatile Memories II
Session Chairs
Karen Attenborough
Friday AM, April 13, 2007
Room 3006 (Moscone West)

9:30 AM - **I11.1
Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation.

Yoshihisa Fujisaki 1 , Nozomu Matsuzaki 1 , Kenzo Kurotsuchi 1 , Yuichi Matsui 1 , Osamu Tonomura 1 , Takahiro Morikawa 1 , Masaharu Kinoshita 1 , Naoki Kitai 2 , Satoru Hanzawa 1 , Hiroshi Moriya 3 , Norikatsu Takaura 1 , Motoyasu Terao 1 , Masamichi Matsuoka 4 , Tsuyoshi Koga 4 , Masahiro Moniwa 4
1 , Central Research Laboratory, Hitachi Ltd., Tokyo Japan, 2 , Hitachi ULSI Systems Co. Ltd., Kokubunji, Tokyo Japan, 3 , Hitachi Mechanical Engineering Research Laboratory, Hitachi Ltd., Hitachinaka, Ibaraki Japan, 4 , Renesas Technology Corp., Itami, Hyogo Japan

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10:15 AM - I11.3
Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory (PRAM).

Jeung-hyun Jeong 1 , Su Youn Lee 1 , Wu Zhe 1 , Taek Sung Lee 1 , Won Mok Kim 1 , Seul Cham Kim 2 , Kyu Hwan Oh 2 , Byung-ki Cheong 1
1 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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10:30 AM - I11.4
New Kind of Microstructure Essential for Amorphous-Crystalline Transitions in Chalcogenide-Based Films.

Vladimir Kolosov 1 , Lev Veretennikov 1
1 , Ural State Economic University, Ekaterinburg Russian Federation

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10:45 AM - I11.5
Crystallization Kinetics of As-Deposited and Melt-Quenched Phase-Change Materials

Yi-Chou Chen 1 , Charles Rettner 2 , Simone Raoux 2 , Geoffrey Burr 2 , Bob Shelby 2 , Martin Salinga 3
1 IBM/Qimonda/Macronix PCRAM Joint Project , Macronix International Co. Ltd., Hsin-Chu Taiwan, 2 IBM/Qimonda/Macronix PCRAM Joint Project , IBM Almaden Research Center, San Jose, California, United States, 3 IBM/Qimonda/Macronix PCRAM Joint Project, I. Physikalisches Institut IA, RWTH, Aachen, Aachen Germany

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11:00 AM -
BREAK

11:30 AM - I11.6
Phase-Change Nanowires for Non Volatile Memory

Yi Cui 1 , Stefan Meister 1 , Hailin Peng 1
1 , Stanford University, Stanford, California, United States

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11:45 AM - I11.7
Effect of Nitrogen Doping on Microstructure and Mechanical Behavior of Ge2Sb2Te5 Films.

Il-Mok Park 1 , Jung-kyu Jung 1 , Young-Chang Joo 1
1 , Seoul National University, Seoul Korea (the Republic of)

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12:00 PM - I11.8
Time-resolved X-ray Diffraction Studies of Phase Change Ultra-thin Films and Nanoparticles.

Simone Raoux 1 , Jean Jordan-Sweet 2 , Charles Rettner 1
1 1IBM/Qimonda/Macronix PCRAM Joint Project, Almaden Research Center, IBM Research Division, San Jose, California, United States, 2 2IBM T. J. Watson Research Center, IBM Research Division, Yorktown Heights, New York, United States

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