Meetings & Events

 

2007 MRS Spring Meeting Logo2007 MRS Spring Meeting & Exhibit


April 9-13, 2007
| San Francisco
Meeting Chairs: Timothy J. Bunning, Harold Y. Hwang, Debra Kaiser, Jennifer A. Lewis

Symposium F : Semiconductor Defect Engineering---Materials, Synthetic Structures, and Devices II

2007-04-10   Show All Abstracts

Symposium Organizers

S. Ashok The Pennsylvania State University
Peter Kiesel Palo Alto Research Center
Jacques Chevallier CNRS
Toshio Ogino Yokohama National University
F1: Dopant and Defect Issues in Oxide and Nitride Semiconductors
Session Chairs
Peter Kiesel
Antonio Polimeni
Tuesday AM, April 10, 2007
Room 3004 (Moscone West)

9:30 AM - F1.1
Dopability, Intrinsic Conductivity, and Non-stoichiometry of the Transparent Conducting Oxides In2O3 and ZnO.

Stephan Lany 1 , Alex Zunger 1
1 , National Renewable Energy Laboratory, Golden, Colorado, United States

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9:45 AM - F1.2
Microscopic Origin of Amphoteric Phosphorus Doping for Stable p-type ZnO.

Xiaoqing Pan 1 , Arnold Allenic 1 , Yanbin Chen 1 , Wei Guo 1 , Guangyuang Zhao 1 , Yong Che 2 , Zhendong Hu 2 , Bin Liu 2 , Shengbai Zhang 3
1 , University of Michigan, Ann Arbor, Michigan, United States, 2 , IMRA Inc., Ann Arbor, Michigan, United States, 3 , National Renewable Energy Laboratory, Golden, Colorado, United States

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10:00 AM - **F1.3
Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Ulrich Wahl 1 2 , Joao Guilherme Correia 1 2 3 , Elisabete Rita 2 , Ana Claudia Marques 2 3 , Eduardo Alves 1 2 , Jose Carvalho Soares 2
1 Fisica, Instituto Tecnologico e Nuclear, Sacavem Portugal, 2 , Centro de Física Nuclear da Universidade de Lisboa, Lisbon Portugal, 3 PH, CERN, Geneva Switzerland

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10:30 AM - F1.4
Design of Shallow Acceptors in ZnO

Su-Huai Wei 1 , Jinbo Li 1 , Yanfa Yan 1
1 , National Renewable Energy Lab, Golden, Colorado, United States

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10:45 AM - F1.5
Formation Of Impurity Complexes During The Growth Of Undoped And Nitrogen Doped Zinc Oxide.

N. Nickel 1 , F. Friedrich 1 , J. Rommeluere 2 , P. Galtier 2
1 , Hahn-Meitner-Institut Berlin, Berlin Germany, 2 , CNRS-LPSC, Meudon France

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11:00 AM - *
Break

11:30 AM - **F1.6
N Incorporation, Defects and Electronic Structure in Epitaxial N-doped TiO2 Rutile.

Scott Chambers 1 , Irene Cheung 1 , Pannusami Nachimuthu 1 , Alan Joly 1 , Mark Engelhard 1 , Michael Bowman 1
1 , Pacific Northwest National Laboratory, Richland, Washington, United States

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12:00 PM - F1.7
Chlorine Doped ZnO grown by MOCVD.

Ekaterine Chikoidze 1 2 , Vincent Sallet 1 , Julien Barjon 1 , Ouri Gorochov 1 , Pierre Galtier 1
1 GEMAC, CNRS, MEUDON France, 2 Material Science Department, Tbilisi State University, Tbilisi Georgia

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12:15 PM - F1.8
Defect States in Carbon Co-Doped n- and p-type GaN Grown by Molecular Beam Epitaxy.

Andrew Armstrong 1 , Christiane Poblenz 2 , Umesh Mishra 2 , James Speck 2 , Steven Ringel 1
1 Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, United States, 2 Materials and Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California, United States

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12:30 PM - F1.9
Unusually High Be Diffusivity in GaAs1-xNx (x<<0.01)

Wenkai Zhu 1 , Alex Freundlich 1
1 Center for Advanced Materials, University of Houston, Houston, Texas, United States

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12:45 PM - F1.10
Structural Origins of the Systematic Crystallographic Tilt in Micron-Sized InAs Islands on (100) GaAs.

Xueyan Song 1 , Ganesan Suryanarayanan 2 , Anish Khandekar 3 , Thomas Kuech 3 2 , Susan Babcock 1 2
1 Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, United States, 2 Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin, United States, 3 Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin, United States

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F2: Defect Properties, Activation, Passivation
Session Chairs
S. Ashok
Reinhart Job
Tuesday PM, April 10, 2007
Room 3004 (Moscone West)

2:30 PM - **F2.1
Are the Materials Properties of Indiumnitride Dominated by Defects?

Petra Specht 1 , Johnny Ho 1 , Joanne Yim 1 , Eicke Weber 1 , Til Bartel 2 , Christian Kisielowski 2
1 Mat. Sci. & Eng., UC Berkeley, Berkeley, California, United States, 2 National Center for Electron Microscopy, Lawrence Berkeley National Laboratories, Berkeley, California, United States

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3:00 PM - F2.2
Nature of Stacking Faults in Quaternary InxAlyGa1-x-yN Layers.

Fanyu Meng 1 , Nathan Newman 1 , Subhash Mahajan 1
1 School of Materials, Arizona State University, Tempe, Arizona, United States

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3:15 PM - F2.3
Conductivity Characteristic in Heavily Boron-Doped Diamond Films.

Hitoshi Ishiwata 1 , Tomohiro Takenouchi 1 , Ryusuke Okada 1 , Shingo Iriyama 1 , Yoshihiko Takano 2 , Hiroshi Kawarada 1
1 Nano Science Engineering, Waseda University, Setagaya-ku, Tokyo, Japan, 2 Nano-frontier Material, National Institute for Materials Science, Tsukuba, Ibaragi, Japan

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3:30 PM - F2.4
Theoretical Study of the Nature of Defect States in PbTe Thin Films.

Subhendra Mahanti 1 , Khang Hoang 1 , Puru Jena 2
1 Physics and Astronomy, Michigan State University, East Lansing, Michigan, United States, 2 Physics , Virginia Commonwealth University, Richmond, Virginia, United States

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3:45 PM - F2.5
Predominance of Alternate Diffusion Mechanisms for Interstitial-Substitutional Impurities in Si.

Hui Li 1 , Na Li 1 , Subhash Joshi 1 , Teh Tan 1
1 Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina, United States

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4:00 PM - *
Break

4:30 PM - **F2.6
Defect Engineering in Oxide Semiconductors.

Chris Van de Walle 1
1 , University of California, Santa Barbara, Santa Barbara, California, United States

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5:15 PM - **F2.8
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering.

Antonio Polimeni 1
1 CNISM and Dipartimento di Fisica, Università di Roma ''La Sapienza'', Roma Italy

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5:45 PM - F2.9
Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO

Reinhart Job 1
1 Department of Mathematics and Computer Science, University of Hagen, Hagen Germany

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F3: Poster Session I
Session Chairs
S. Ashok
Toshio Ogino
Tuesday PM, April 10, 2007
Salon Level (Marriott)

9:00 PM - F3.1
Defect Structures of B12As2 Epitaxial Films Grown on Various 6H-SiC Substrates

Hui Chen 1 , Guan Wang 1 , Balaji Raghothamachar 1 , Michael Dudley 1 , James Edgar 2
1 Materials Sci&Eng, STONY BROOK UNIVERSITY, STONY BROOK, New York, United States, 2 Chemical Engineering, Kansas State University, Manhattan, Kansas, United States

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9:00 PM - F3.10
Electronic structure of Cd, In, Sn substitutional Defects in GaSe.

Subhendra Mahanti 1 , Zsolt Rak 1 , Krishna Mandal 2 , N. Fernelius 3
1 Physics and Astronomy, Michigan State University, East Lansing, Michigan, United States, 2 , EIC Laboratories, Inc, 111 Downey Street, Norwood, Massachusetts, United States, 3 , AFRL/MLPSO, WPAFB, Dayton, Ohio, United States

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9:00 PM - F3.11
The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures.

Roman Burbelo 1 , Oleg Olikh 1 , Mark Hinders 2
1 Faculty of Physics, Taras Shevchenko Kyiv National University, Kyiv Ukraine, 2 Applied Science Faculty, The College of William & Mary, Williamsburg, Virginia, United States

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9:00 PM - F3.13
Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon

A. Vasin 1 , A. Konchits 1 , S. Kolesnik 1 , A. Rusavskii 1 , V. Lysenko 1 , Alexei Nazarov 1 , Y. Ishikawa 2 , S. Ashok 3
1 , Institute of Semiconductor Physics, Kyiv Ukraine, 2 , Japan Fine Ceramic Center , Nagoya Japan, 3 , The Pennsylvania State University, University Park, Pennsylvania, United States

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9:00 PM - F3.14
Application of Computational Intelligence to Investigation of Defect Centers in Semi-insulating Materials by Photoinduced Transient Spectroscopy.

Pawel Kaminski 1 , Stanislaw Jankowski 2 , Roman Kozlowski 3
1 , Institute of Electronic Materials Technology, Warszawa Poland, 2 Institute of Electronic Systems, Warsaw University of Technology, Warszawa Poland, 3 , Institute of Electronic Materials Technology, Warszawa Poland

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9:00 PM - F3.15
Investigations of Current Transport on GaN Pendeo Exitaxy Substrate.

Taehoon Jang 1 , Hosun Paek 1 , Younjoon Sung 1 , Joong-kon Son 1 , Okhyun Nam 1 , Yongjo Park 1
1 Photonics, Samsung Advanced Institute of Technology, Suwon Korea (the Republic of)

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9:00 PM - F3.16
The Study of Interfacial Misfit Dislocations in a Heteroepitaxial Island using Finite Element Analysis.

Gang Feng 1 , L. Freund 1
1 Engineering, Brown University, Providence, Rhode Island, United States

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9:00 PM - F3.17
Stress Effects on As Activation in Si.

Chihak Ahn 1 , Scott Dunham 2 1
1 Physics, University of Washington, Seattle, Washington, United States, 2 Electrical Engineering, University of Washington, Seattl, Washington, United States

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9:00 PM - F3.18
Computational Model for Effects of Dislocations on Bandedge Photoluminescence Reduction and Yellow Luminescence in GaN.

Jeong Ho You 1 , H. Johnson 1
1 Mechanical Science & Engineering, University of Illinois-Urbana Champaign, Urbana, Illinois, United States

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9:00 PM - F3.19
Diffusion, Solubility And Electrical Properties Of Rare Earths Elements In Silicon.

Dilshad Nazyrov 1
1 Physics , National University of Uzbekistan, Tashkent Uzbekistan

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9:00 PM - F3.20
Comparative Analysis of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation.

Vasilii Gusakov 1
1 , Joint Institute of Solid State and Semiconductor Physics, Minsk Belarus

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9:00 PM - F3.21
Interaction Of Gold With Samarium And Gadolinium In Silicon.

Dilshad Nazyrov 1
1 Physics , National University of Uzbekistan, Tashkent Uzbekistan

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9:00 PM - F3.22
Deuterium Out-diffusion Kinetics in Magnesium-doped GaN.

Jacques Chevallier 1 , Francois Jomard 1 , Norbert Nickel 2 , Philippe de Mierry 3
1 Groupe d'Etude de la Matière Condensée, CNRS, Meudon France, 2 , Hahn-Meitner-Institut, Berlin Germany, 3 Centre de Recherche sur l'Hétéroépitaxie et Applications, CNRS, Valbonne France

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9:00 PM - F3.24
Influence of Hydrogen Implantation Conditions on the Trapping of Hydrogen by Radiation-induced Damage in InP.

Peng Chen 1 , S. Lau 1 , N. Theodore 2 , Lin Shao 3 , Michael Nastasi 4 , Thomas Kuech 5
1 Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, United States, 2 Wireless and Packaging Systems Laboratory, Freescale Semiconductor Inc., Tempe, Arizona, United States, 3 Department of Nuclear Engineering, Texas A&M University, College Station, Texas, United States, 4 , Los Alamos National Laboratory, Los Alamos, New Mexico, United States, 5 Department of Chemical and Biological Engineering, University of Wisconsin, Madison, Madison, Wisconsin, United States

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9:00 PM - F3.25
Characterization of a Metastable Defect with the Emission Activation Energy of 0.55 eV in Hydrogen-Implanted n-Type Silicon by Deep-Level Transient Spectroscopy.

Yutaka Tokuda 1 , Takeshi Seo 1
1 Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Toyota Japan

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9:00 PM - F3.27
TEM Studies of the Role of Bias in Growth of Heteroepitaxial Diamond.

Vidhya Sagar Jayaseelan 1 , Raj Singh 1
1 Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio, United States

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9:00 PM - F3.3
Luminescence Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells Grown by a Pulsed Metalorganic Chemical Vapor Deposition.

Mee-Yi Ryu 1 , C. Chen 2 , M. Khan 2
1 Department of Physics, Kangwon National University, Kangwon-do Korea (the Republic of), 2 Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, United States

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9:00 PM - F3.4
Point Defect Concentration Depending on In Composition and Distribution in InxGa1-xN.

Jihye Shim 1 , Jong Pa Hong 1 , Bum Jun Kim 1 , Chang Sung Kim 1 , Won Shin Lee 1
1 , Samsung Electro-Mechanics, Suwon Korea (the Republic of)

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9:00 PM - F3.5
Raman and Photoluminescence Characterization of PbI2 Thin Films Grown Using n.n-dimethylformamide as Solvent.

Jose Condeles 1 , Ademar Caldeira Filho 1 , Marcelo Mulato 1
1 Physics and Mathematics, University of São Paulo, Ribeirao Preto-SP, SP, Brazil

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9:00 PM - F3.7
Defects Created by Plasma Based Ion Implantation of Hydrogen in Germanium.

David Marie-Laure 1 , Pailloux Frederic 1 , Drouet Michel 1 , Beaufort Marie-France 1 , Barbot Jean François 1 , Simoen Eddy 2 , Claeys Cor 2
1 Laboratoire de Métallurgie Physique, Université de Poitiers, Futuroscope-Chasseneuil Cedex France, 2 , IMEC, Leuven Belgium

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9:00 PM - F3.8
Simulation Of Intrinsic Point Defect Properties And Clustering In Single Crystal Germanium.

Piotr Spiewak 1 2 , Krzysztof Kurzydlowski 1 , Jan Vanhellemont 3 , Piotr Wabinski 2 , Krzysztof Mlynarczyk 2 , Igor Romandic 4 , Antoon Theuwis 4
1 Faculty of Materials Science and Engineering, Materials Design Division, Warsaw University of Technology, Warsaw Poland, 2 Electro-Optic Materials, Umicore, Warsaw Poland, 3 Department of Solid State Sciences, Ghent University, Ghent Belgium, 4 Electro-Optic Materials, Umicore, Olen Belgium

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9:00 PM - F3.9
Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates.

Cheng-Liang Wang 1 , Jyh-Rong Gong 1
1 Department of Physics, National Chung Hsing University, Taichung City Taiwan

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