Chairs
Miltiadis K. Hatalis, Lehigh University
Fumiaki Funada, Sharp Corporation
Jerzy Kanicki, University of Michigan
Christopher J. Summers, Georgia Institute of Technology
Symposium Support
IBM
Sharp Corporation
Xerox
TUTORIAL
STH: FLAT PANEL DISPLAY MATERIALS
Instructors: Jerzy Kanicki, University of Michigan
C. J. Summers, Georgia Institute of Technology
Monday, April 8, 1:30 - 5:00 P.M.
Golden Gate C1
*Overview of Electronic Information Displays
*Active-Matrix Liquid Crystal Displays
*Thin Film Light-Emitting Structures
*Electroluminescent Phosphors
*Field Emission Displays
The key to the active-matrix liquid-crystal displays (AMLCD) success is that,
while they retain all the desirable properties of the conventional LCDs, namely
a very thin, low mass displays, they offer an image quality which in most ways
matches or even exceeds that of a CRT. On critical technology for achieving
such displays is the use of thin-film transistor (TFT) or diodes as an
electronic switch at each pixel in the display. During this tutorial, the
properties of the materials and devices used in the present AMLCDs will be
discussed in details, but, at the same time, the new remaining challenges
related to a high-definition AMLCDs will also be addressed. Despite that
AMLCDs have established themselves as a major force in terms of both display
quality and market growth, there remain a considerable interest in leapfrog
emissive display technologies such as organic polymer light-emitting diodes
(LEDs). However, one of the major concerns which must be addressed before
polymer LEDs can be manufactured in a large scale is the efficiency and
lifetime of the LEDs, both under storage and in operation. These important
issues and their relation to the materials will be discussed during this
tutorial. Also one of most exciting events in the last few years in emissive
displays is renewed interest in field-emission displays (FEDs). While there
has been significant progress in emitter-array development, there are numerous
engineering challenges, such as low-voltage phosphor efficiency, phosphor
aging, vacuum processing and the development of first-generation manufacturing
tools, which must be resolved prior to commercial production of FEDs. Some of
these challenges will be addressed during this tutorial. Finally, as always,
the reliability, failure mechanisms, and lifetime issues of FEDs should be
rigourously studied before field-emission devices can be commercialized.
Related Symposia: A: AMORPHOUS SILICON TECHNOLOGY - 1996; and, J: THIN FILMS
FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS
*Invited Paper
JOINT SESSION H1/A2: THIN FILM TRANSISTORS I
Chair: Michael Hack
Tuesday Morning, April 9
Golden Gate C2
8:30 A.M. *H1.1/A2.1
AMORPHOUS SILICON TFT'S AND FLAT PANEL DISPLAYS, Toshihisa Tsukada,
Hitachi, Ltd., Central Research Laboratory, Tokyo, Japan.
9:00 A.M. *H1.2/A2.2
FLAT PANEL DISPLAYS, Malcolm Thompson, Xerox Palo Alto Research Center,
Palo Alto, CA.
9:30 A.M. H1.3/A2.3
A NOVEL DEVICE STRUCTURE FOR HIGH PERFORMANCE, HIGH VOLTAGE AMORPHOUS SILICON
THIN-FILM TRANSISTORS, Amir M. Miri, Prasad S. Gudem and Savvas G.
Chamberlain, University of Waterloo, Department of Electrical and Computer
Engineering, Waterloo, Canada.
9:45 A.M. H1.4/A2.4
THE FABRICATION AND PERFORMANCE OF NOVEL HIGH VOLTAGE POLYSILICON THIN FILM
TRANSISTOR STRUCTURES INCORPORATING A SEMI-INSULATING FIELD PLATE, F.J.
Clough, Y. Chen, W.I. Milne, University of Cambridge, Engineering
Department, Cambridge, United Kingdom; E.M. Sankara Narayanan, De Montfort
University, Emerging Technologies Centre, Leicester, United Kingdom; and W.
Eccleston, University of Liverpool, Electrical Engineering Department,
Liverpool, United Kingdom.
10:00 A.M. BREAK
JOINT SESSION H2/A3: THIN FILM TRANSISTORS II
Chair: Miltiadis K. Hatalis
10:30 A.M. *H2.1/A3.1
HIGH DEPOSITION RATE a-Si:H FOR THE FLAT PANEL DISPLAY INDUSTRY, J.
Hautala, Z. Saleh, J.F.M. Westendorp, Tokyo Electron America, Beverly, MA;
J. Souk, IBM T.J. Watson Research Center, Yorktown Heights, NY; and H. Meiling,
Utrecht University, Utrecht, Netherlands.
11:00 A.M. H2.2/A3.2
SURFACE ROUGHNESS OF SILICON-NITRIDE GATE INSULATORS DEPOSITED IN A 40-MHZ GLOW
DISCHARGE, H. Meiling, W.F. van der Weg, Debye Institute Utrecht
University, Department of Atomic and Interface Physics, Utrecht, Netherlands;
J.J. Hautala and J.F.M. Westendorp, Tokyo Electron America, Inc., Beverly,
MA.
11:15 A.M. H2.3/A3.3
HOT-WIRE DEPOSITED AMORPHOUS SILICON THIN-FILM TRANSISTORS, R.E.I.
Schropp, K.F. Feenstra and H. Meiling, Utrecht University, Debye Institute,
Utrecht, Netherlands.
11:30 A.M. H2.4/A3.4
BELOW THRESHOLD CURRENT DISTRIBUTION IN a-Si:H TFTs: BACK CHANNEL CONDUCTION,
H.C. Slade, M.S. Shur, University of Virginia, Charlottesville, VA; S.C.
Deane, Philips Research Laboratory, Surrey, United Kingdom; and M. Hack, Xerox
Palo Alto Research Center, Palo Alto, CA.
11:45 A.M. H2.5/A3.5
CHARACTERISTICS OF XeCl EXCIMER-LASER ANNEALED INSULATOR, K.H. Jang,
H.S. Chol and M.K. Hand, Seoul National University, Department of Electrical
Engineering, Seoul, Korea.
SESSION H3: LIQUID CRYSTAL DISPLAYS
Chairs: F. Funada and S. Naemura
Tuesday Afternoon, April 9
Golden Gate C1
1:30 P.M. *H3.1
LIQUID-CRYSTALS FOR MULTIMEDIA DISPLAY USE: MATERIALS AND THEIR PHYSICAL
PROPERTIES, Shohei Naemura, Merck Japan Limited, LC Technical Center,
Kanagawa, Japan.
2:00 P.M. *H3.2
TBD
2:30 P.M. H3.3
SUSPENDED PARTICLE DISPLAY USING NOVEL COMPLEXES, Hisato Takeuchi,
Arimitsu Usuki, Hiromitsu Tanaka, Akane Okada, Toyota Central R&D
Laboratories, Inc., Materials Division III, Nagakute, Japan; and Kazuo Tojima,
Toyota Motor Corporation, Material Engineering Division I, Toyota, Japan.
2:45 P.M. H3.4
STUDIES OF SURFACE ORIENTATION IN BUFFED AMORPHOUS AND SEMICRYSTALLINE POLYMER
FILMS, Y. Liu, H.R. Brown, T.P. Russell, M. Friedenberg, J. Diaz, A.
Cossy, M. Samant, J. Stohr, IBM Almaden Research Center, San Jose, CA.
3:00 P.M. H3.5
THE EFFECT OF PHENYL BENZOATE AND CYANOBIPHENYL SELF-ASSEMBLED MONOLAYERS ON
LIQUID CRYSTAL ALIGNMENT, Renate J. Ondris-Crawford, Curtis W. Frank,
Stanford University, Department of Chemical Engineering, Stanford, CA; Lorraine
M. Lander and Robert J. Twieg, IBM Almaden Research Center, San Jose, CA.
3:15 P.M. H3.6
ANISOTROPIC CROSSLINKING AND LC ALIGNMENT ON PHOTOACTIVE POLYMERS, I.
Sage, G. Bryan-Brown, DRA Electronics Sector, Worcestershire, United
Kingdom; J.W. Goodby and J. Hollingshurst, University of Hull, Department of
Chemistry, Hull, United Kingdom.
3:30 P.M. BREAK
SESSION H4: TRANSPARENT CONDUCTING OXIDES
Chairs: S. Naemura and F. Funada
Related Symposium J: THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE
APPLICATIONS
4:00 P.M. H4.1
BACKGROUND PRESSURE EFFECT IN SPUTTER DEPOSITION ON CHARACTERISTICS OF INDIUM
TIN OXIDE THIN FILM, B.H. Lee, C.-H. Yi, I.G. Kim, S.-H. Lee and S.K.
Kang, Samsung Display Devices Company, Ltd., Research and Development Center,
Kyungki-Do, Korea.
4:15 P.M. H4.2
LOW RESISTIVITY TRANSPARENT INDIUM TIN OXIDE (ITO) FILMS SPUTTERED AT ROOM
TEMPERATURE WITH H2O ADDITION, Ken-ichi Onisawa, Etsuko Nishimura,
Masahiko Ando, Hitachi, Ltd., Hitachi Research Laboratory, Department of
Imaging Devices, Hitachi-shi, Japan; Masaru Takabatake, Hitachi, Ltd., Electron
Tube and Devices Division, Mobara-shi, Japan; and Tetsuroh Minemura, Hitachi,
Ltd., Hitachi Research Laboratory, Department of Imaging Devices, Hitachi-shi,
Japan.
4:30 P.M. H4.3
ATOMIC HYDROGEN EFFECTS ON THE OPTICAL AND ELECTRICAL PROPERTIES OF TRANSPARENT
CONDUCTING OXIDES FOR FLAT PANEL DISPLAY, Je-Hsiung Lan and Ierzy
Kanicki, University of Michigan, Display Technology and Manufacturing Center,
Ann Arbor, MI.
4:45 P.M. H4.4
OPTICAL AND ELECTRICAL PROPERTIES OF Sb AND Bi DOPED TIN OXIDE FILMS DEPOSITED
ON VARIOUS TYPES OF GLASS SUBSTRATES, V. Foglietti, Instituto di
Elettronica dello Stato Solido del CNR, Via Cineto, Roma, Italy; A. Galbato and
P. Maltese, Universita' degli studi di Roma "La Sapiena" e Unita INFM, Via
Eudossiana, Roma, Italy.
SESSIION H5: POLYSILICON THIN FILM TRANSISTORS I
Chairs: M.K. Hatalis and W.A. Anderson
Wednesday Morning, April 10
Golden Gate C1
8:30 A.M. *H5.1
LOW TEMPERATURE POLYSILICON DEVICES AND CIRCUITS, D. Pribat, F. Plais,
P. Legagneux, C. Reita, F. Petinot and O. Huet, Thompson CSF, LCR, Orsay,
France.
9:00 A.M. H5.2
SINGLE-CRYSTAL Si TFT IN ULTRA-LARGE GRAIN Si FILM ON GLASSY SUBSTRATE, R.
Ishihara and M. Matsumura, Tokyo Institute of Technology, Department of
Physical Electronics, Tokyo, Japan.
9:15 A.M. H5.3
ELECTRICAL PERFORMANCE OF AN N-CHANNEL TFT FABRICATED ON A QUARTZ SUBSTRATE BY
ZMR, Si-Woo Lee, Seung-Ki Joo, Seoul National University, Department of
Metallurgical Engineering, Seoul, Korea; and In-Gon Lim, LG Electronics
Research Center, Device and Material Laboratory, Seoul, Korea.
9:30 A.M. H5.4
LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON FOR THIN FILM
TRANSISTORS, J. Jang, B.Y. Ryu and J.I. Ryu, Kyung Hee University,
Department of Physics, Seoul, Korea.
9:45 A.M. H5.5
PERFORMANCE OF POLY-Si TFTS WITH DOUBLE GATE OXIDE LAYERS, B.H. Min,
C.M. Park, J.H. Jun, K.Y. Choi, H.S. Choi and M.K. Han, Seoul National
University, Department of Electrical Engineering, Seoul, Korea.
10:00 A.M. H5.6
HELICAL RESONATOR PLASMA OXIDATION OF AMORPHOUS SILICON FOR FLAT PANEL
DISPLAYS, Sita R. Kaluri, Dennis W. Hess, Lehigh University, Chemical
Engineering Department, Bethlehem, PA; and Miltiadis K. Hatalis, Lehigh
University, EECS Department, Bethlehem, PA.
10:15 A.M. BREAK
SESSION H6: POLYSILICON THIN FILM TRANSISTORS II
Chairs: W.A. Anderson and M.K. Hatalis
10:45 A.M. *H6.1
LOW ENERGY ION DOPING TECHNOLOGY FOR POLY-Si TFTS, Akio Mimura, Hitachi
Research Laboratory, Department of Imaging Devices, Ibaraki-Ken, Japan.
11:15 A.M. H6.2
FORMATION OF SOURCE/DRAIN BY ION MASS DOPING FOR POLY-Si TFTs, Duck-Kyun Choi,
Jin-Young Yoon, Hanyang University, Department of Inorganic Material
Engineering, Seoul, Korea; Tae-Hyung Lu, Seung-Ki Joo, Seoul National
University, Department Metallurgical Engineering, Seoul, Korea.
11:30 A.M. H6.3
NOVEL N2O PLASMA PASSIVATIONS ON POLY-SILICON THIN-FILM TRANSISTORS, H.C. Chen,
F.S. Wang and C.Y. Huang, National Chiao-Tung University, Department of
Electronic Engineering, Hsinchu, Taiwan.
11:45 A.M. H6.4
POLYSILICON THIN FILM TRANSISTORS WITH SILICIDE SOURCE AND DRAIN CONTACTS,
Greg Sarcona anmd Miltiadis K. Hatalis, Lehigh University, Display
Research Laboratory, EECS Department, Bethlehem, PA.
SESSION H7: AMORPHOUS SILICON THIN FILM TRANSISTORS
Chairs: A. Mimura and D. Pribat
Wednesday Afternoon, April 10
Golden Gate C1
Related Symposium: A: AMORPHOUS SILICON TECHNOLOGY - 1996
1:30 P.M. *H7.1
TBD
2:00 P.M. H7.2
HIGH-RATE DEPOSITED AMORPHOUS MATERIALS FOR THE HYDROGENATED AMORPHOUS SILICON
THIN FILM TRANSISTOR STRUCTURES, Tong Li, Chun-Ying Chen, Jerzy Kanicki,
University of Michigan, Department of Electrical Engineering and Computer
Science, Center for Display Technology and Manufacturing, Ann Arbor, MI; and
Charles Malone, Optical Imaging Systems, Inc., Northville, MI.
2:15 P.M. H7.3
LOW TEMPERATURE FABRICATION OF THIN FILM TRANSISTORS BY DC REACTIVE MAGNETRON
SPUTTERING, C.S. McCormick and J.R. Abelson, University of Illinois,
Materials Science Department and The Coordinated Science Laboratory, Urbana,
IL.
2:30 P.M. H7.4
INFLUENCE OF THE DENSITY OF STATES AND TEMPERATURE-DEPENDENT CONTACT RESISTANCE
ON THE FIELD-EFFECT ACTIVATION ENERGY IN a-Si:H TFT, Chun-Ying Chen and
Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and
Computer Science, Ann Arbor, MI.
2:45 P.M. H7.5
INVESTIGATION OF THE OFF-CURRENT IN AMORPHOUS SILICON THIN FILM TRANSISTORS FOR
SiO2 AND SiNx GATE INSULATORS, Jeong Hyun Kim, Woong Sik Choi and Chan
Hee Hong, Large Electronics Inc., Anyang Shi, Korea.
3:00 P.M. H7.6
LOW TEMPERATURE GROWTH OF MICROCRYSTALLINE SILICON FROM SiF4, Yu Chen
and S. Wagner, Princeton University, Princeton, NJ.
3:15 P.M. BREAK
SESSION H8: NEW POLYSILICON PROCESSES
Chairs: D. Pribat and A. Mimura
3:45 P.M. H8.1
SOLUTION GROWN POLYSILICON FOR FLAT PANEL DISPLAYS, Wayne Anderson and
Richard Wallace, State University of New York at Buffalo, Department of
Electrical and Computer Engineering, Amherst, NY.
4:00 P.M. H8.2
COPPER-ENHANCED SOLID PHASE CRYSTALLIZATION OF AMOUPHOUS SILICON FILMS, Dong
Kyun Sohn, Dae Gyu Moon and Byung Tae Ahn, Korea Advanced Institute of
Science and Technology, Department of Materials Science and Engineering,
Taejon, Korea.
4:15 P.M. H8.3
SOLID-PHASE CRYSTALLIZATION OF a-(Si0.69Ge0.31/Si) and a-(Si/0.69Ge0.31/Si)
BILAYER FILMS ON SiO2, Tae-Hoon Kim, Myung-Kwan Ryu, Jin-Won Kim, Ki-Bum
Kim, Seoul National University, Department of Metallurgical Engineering, Seoul,
Korea; and Chang-Soo Kim, Korea Research Institute of Standards Science,
Taejeon, Korea.
4:30 P.M. H8.4
INVESTIGATION OF THE DEPOSITION AND CHARACTERIZATION OF THE STRUCTURE OF
as-DEPOSITED AND CRYSTALLIZED POLYCRYSTALLINE SixGe1-x THIN FILMS, Tolis
Voutsas, Sharp Microelectronics Technology, Corporate Strategic Engineering
Center, Camas, WA; and John Grant, Sharp Microelectronics Technology, IC
Process Technology, Camas, WA.
4:45 P.M. H8.5
INFLUENCE OF LIGHT ON THE SOLID PHASE CRYSTALLIZATION OF AMORPHOUS SILICON,
Reece Kingi, Stephen Fonash, Pennsylvania State University, Department
of Electronic Materials and Processing Research Laboratory, University Park,
PA; John Mehlhaff and Howard Hovagimian, Intevac RTP Systems, Rocklin, CA.
5:00 P.M. H8.6
SELECTIVE DEPOSITION OF POLYSILICON AT LOW TEMPERATURE BY HOT-WIRE CVD,
Shuangying Yu, Erdogan Gulari, University of Michigan, Department of
Chemical Engineering, Ann Arbor, MI; and Jerzy Kanicki, University of Michigan,
Department of Electrical Engineering and Computer Science, Center for Display
Technology and Manufacturing, Ann Arbor, MI.
SESSION H9: ORGANIC ELECTROLUMINESCENT
MATERIALS AND DISPLAYS I
Chairs: J. Kanicki and C. Tang
Thursday Morning, April 11
Golden Gate C1
8:30 A.M. *H9.1
STABLE ORGANIC ELECTROLUMINESCENT DEVICES, C.W. Tang, S.A. Van Slyke, J.
Shi, C.H. Chen, Eastman Kodak Company, Imaging Research and Advanced
Development, Rochester, NY.
9:00 A.M. H9.2
AROMATIC AMINE-CONTAINING POLYMERS FOR ORGANIC ELECTROLUMINESCENT DEVICES,
Junji Kido, Gaku Harada, Hiromasa Ohta and Katsutoshi Nagai, Yamagata
University, Department of Materials Science and Engineering, Yamagata,
Japan.
9:15 A.M. H9.3
FULL-COLOR DISPLAYS MADE WITH LIGHT-EMITTING ELECTROCHEMICAL CELLS, G.
Yu, Q. Pei, C. Zhang, Y. Cao, Y. Yang and A.J. Heeger, UNIAX Corporation,
Santa Barbara, CA.
9:30 A.M. H9.4
LOW-VOLTAGE, HIGH-BRIGHTNESS POLYMER LIGHT-EMITTING DIODES WITH LONG STRESS
LIFE, G. Yu, C. Zhang, Q. Pei, Y. Cao, Y. Yang and A.J. Heeger, UNIAX
Corporation, Santa Barbara, CA.
9:45 A.M. H9.5
(ABSTRACT WITHDRAWN)
10:00 A.M. H9.6
ELECTRON INJECTION EFFECTS IN ELECTROLUMINESCENT DEVICES USING POLYMER BLEND
THIN FILMS, C.C. Wu, J.C. Sturm, R.A. Register, Princeton University,
Advanced Technology Center for Photonic and Optoelectronic Materials,
Princeton, NJ; and M.E. Thompson, University of Southern California, Los
Angeles, Department of Chemistry, Los Angeles, CA.
10:15 A.M. BREAK
SESSION H10: ORGANIC ELECTROLUMINESCENT
MATERIALS AND DISPLAYS II
Chairs: C. Tang and J. Kanicki
10:45 A.M. H10.1
POLY(BITHIAZOLES): A NEW CLASS OF POLYMERS FOR LIGHT-EMITTING DIODES, David
Curtis, Jeffrey K. Politis, John Nanos and Jerzy Kanicki, University of
Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor,
MI.
11:00 A.M. H10.2
VOLTAGE CONTROLLABLE TWO-COLOR LIGHT-EMITTING ELECTRO-CHEMICAL CELLS, Yang
Yang, Qibing Pci, Alan J. Heeger, UNIAX Corporation, Santa Barbara, CA.
11:15 A.M. H10.3
INDOLOINDOLE-BASED ORGANIC LIGHT-EMITTING DIODES, S.J. Jacobs, T.P.
Pollagi, M.B. Sinclair, Sandia National Laboratories, Albuquerque, NM; R.D.
Scurlock and P.R. Ogilby, University of New Mexico, Department of Chemistry,
Albuquerque, NM.
11:30 A.M. H10.4
CORE-LEVEL PHOTOABSORPTION SPECTROSCOPY OF MEH-PPV, D.G.J. Sutherland,
Lawrence Berkeley Laboratory, Berkeley, CA; K. Pakbaz, L.J. Terminello, S.C.
Williams, Lawrence Livermore National Laboratory, Livermore, CA; T.A. Callcott,
University of Tennessee, Department of Physics, Knoxville, TN; J.A. Carlisle,
Lawrence Livermore National Laboratory, Livermore, CA; D.L. Ederer, Tulane
University, Department of Physics, New Orleans, LA; F.J. Himpsel, University of
Wisconsin, Department of Physics, Madison, WI; and I. Jimenez, Lawrence
Berkeley Laboratory, Berkeley, CA.
11:45 A.M. H10.5
SYNTHESIS AND CHARACTERIZATION OF MOLECULAR AND POLYMERIC MATERIALS FOR
UTILIZATION IN ELECTROLUMINESCENT CONJUGATED ORGANIC POLYMERS AND MOLECULARLY
DOPED POLYMER DEVICES, G.A. Fox, P.E. Elliker, A.M. Murray and R.W.
Pekala, Lawrence Livermore National Laboratory, Chemistry and Material Science
Department, Livermore, CA.
SESSION H11: FIELD EMISSION DISPLAYS
Chairs: B.K. Wagner and E.T. Goldburt
Thursday Afternoon, April 11
Golden Gate C1
1:30 P.M. *H11.1
THE EFFECT OF TECHNOLOGY AND MATERIALS CHOICE ON FIELD EMISSION DISPLAY
PERFORMANCE, Marko M.G. Slusarczuk, Silicon Video Corporation, San Jose,
CA.
2:00 P.M. H11.2
EMISSION CHARACTERISTICS OF THE MO-COATED SILICON TIPS, Heung-Woo Park,
Byeong-Kwon Ju, Jung-Ho Park, Myung-Hwan Oh, KIST, Department of Information
and Electronics, Seoul, Korea; In-Jae Chung and M.R. Hascard, University of
South Australia, Microelectronics Centre, Level Campus, Australia.
2:15 P.M. H11.3
TiC THIN FILMS FOR FIELD EMITTER FLAT PANEL DISPLAYS, R.F. Greene, R.
Tsu, M. Hasan, K. Daneshvar, J. Miller and J. Chaffin, University of North
Carolina at Charlotte, Charlotte, NC.
2:30 P.M. H11.4
STUDY ON THE DIAMOND FIELD EMITTER FABRICATED BY TRANSFER MOLD TECHNIQUE,
Byeong-Kwon Ju, Seong-Jin Kim, Jae-Hoon Jung, KIST, Division Electronics
and Information Technology, Seoul, Korea; Beom Soo Park, Young-Joon Baik, KIST,
Division Ceramics, Seoul, Korea; Sung-Kvoo Lim, Dankook University, Division
Electronics Engineering, Cheonan, Korea; Sung-Kvoo Lim, Dankook University,
Division Electronics Engineering, Cheonan, Korea; and Myung-Hwan Oh, Kist,
Division Electronics and Information technology, Seoul, Korea.
2:45 P.M. H11.5
ELECTRON EMISSION FROM DIAMOND AND CARBON NITRIDE GROWN BY HOT FILAMENT CVD OR
Cs+ ION GUN SPUTTER DEPOSITION SYSTEM, Eung Joon Chi, Jae Yeob Shim,
Soon Joon Rho and Hong Koo Baik, Yonsei University, Department of Metallurgical
Engineering, Seoul, Korea.
3:00 P.M. H11.6
PROPERTIES OF DIAMOND-LIKE CARBON FOR THIN FILM MICROCATHODES FOR FIELD
EMISSION DISPLAYS, J. Robertson and W.I. Milne, Cambridge University,
Engineering Department, Cambridge, United Kingdom.
3:15 P.M. BREAK
SESSION H12: FIELD EMISSION PHOSPHORS
Chairs: E.T. Goldburt and B.K. Wagner
3:45 P.M. *H12.1
TBD
4:15 P.M. H12.2
PHOSPHOR SYNTHESIS ROUTES AND THEIR EFFECT ON THE PERFORMANCE OF GARNET
PHOSPHORS AT HIGH AND LOW VOLTAGES, L.E. Shea, J. McKittrick, University
of California, San Diego, Department of Applied Mechanics and Engineering
Sciences and Materials Science Program, La Jolla, CA; and M.L.F. Phillips,
Sandia National Laboratories, Albuquerque, NM.
4:30 P.M. H12.3
CHARACTERIZATION OF Y2SiO5:Ce, YAG:Tb AND YAG:Eu RGB PHOSPHOR TRIPLET FOR FIELD
EMISSION DISPLAY APPLICATION, A.A. Talin, T.E. Felter, M.E. Malinowski,
K.D. Stewart, Sandia National Laboratories, Livermore, CA; A.G. Chakhovskoi,
J.T. Trujillo and C.E. Hunt, University of California, Davis, Department of
Electrical and Computer Engineering, Davis, CA.
4:45 P.M. H12.4
CHARACTERIZATION OF LOW-VOLTAGE PHOSPHOR SCREENS FOR FED APPLICATIONS, B.S.
Jeon, J.S. Yoo, Chung-Ang University, Department of Chemical Engineering,
Seoul, Korea; and J.D. Lee, Seoul National University, School of Electronics
Engineering, Seoul, Korea.
5:00 P.M. H12.5
NATURE OF THE GREEN LUMINESCENT CENTER IN ZnO, K. Vanheusden, W.L.
Warren, C.H. Seager, D.R. Tallant and J.A. Voigt, University of New Mexico,
Sandia National Laboratories, Albuquerque, NM; B.E. Gnade, Texas Instruments
Inc., Dallas, TX.
SESSION H13: POSTER SESSION:
Thursday Evening, April 11
8:00 P.M.
Presidio Ballroom
THIN FILM TRANSISTORS
H13.1 POLYCRYSTALLINE SILICON FILMS FORMED BY SOLID-PHASE
CRYSTALLIZATION OF AMORPHOUS SILICON: THE SUBSTRATE EFFECTS ON CRYSTALLIZATION
KINETICS AND MECHANISM, Y.-H. Song, S.-Y. Kang, K.I. Cho, H.J. Yoo,
Electronics and Telecommunications Research Institute, Taejon, Korea; J.H. Kim
and J.Y. Lee, Electronics and Telecommunications Research Institute, Department
of Materials Science and Engineering, Taejon, Korea.
H13.2 A NEW REVERSIBLE DEPASSIVATION/PASSIVATION MECHANISM IN
POLYCRYSTALLINE SILICON, Vyshnavi Suntharalingam and Stephen J. Fonash,
Pennsylvania State University, Electronic Materials & Processing Research
Lab, University Park, PA.
H13.3 TMCTS FOR GATE DIELECTRIC IN THIN FILM TRANSISTORS,
Albert W. Wang, Navakanta Bhat and Krishna C. Saraswat, Stanford
University, Department of Electrical Engineering, Stanford, CA.
H13.4 A NOVEL TECHNIQUE FOR IN-SITU MONITORING OF
CRYSTALLINITY AND TEMPERATURE DURING RAPID THERMAL ANNEALING OF THIN Si/Si-Ge
FILMS ON QUARTZ/GLASS, Vivek Subramanian, F. Levent Degertekin, Paul
Dankoski, Butrus T. Khuri-Yakub, Krishna C. Saraswat, Stanford University,
Department of Electrical Engineering, Stanford, CA.
H13.5 EFFECT OF ANNEALING AMBIENT ON PERFORMANCE AND
RELIABILITY OF LPCVD OXIDES FOR TFTS, Vanakanta Bhat, Albert Wang and
Krishna Saraswat, Stanford University, Department of Electrical Engineering,
Stanford, CA.
H13.6 HIGH PERFORMANCE LASER ANNEALED POLY-Si TFTs WITH A HIGH
QUALITY GATE OXIDE DEPOSITED BY PECVD, Moon-Youn Jung, Sung-Mo Seo,
Yun-Ho Jung, Dae-Gyu Moon and Hoe-Sub Soh, LG Electronics Inc., LCD R&D
Center, Kyoungki-Do, Korea.
H13.7 AC AND DC CHARACTERIZATION AND SPICE MODELING OF SHORT
CHANNEL POLYSILICON TFTs, M.D. Jacunski, M.S. Shur, T. Ytterdal, A.A.
Owusu, University of Virginia, Charlottesville, VA; and M. Hack, Xerox Palo
Alto Research Center, Palto Alto, CA.
H13.8 APPROACHES TO MODIFYING SOLID PHASE CRYSTALLIZATION
KINETICS FOR a-Si FILMS, Reece Kingi, Yaozu Wang, Stephen Fonash, Osama
Awadelkarim, Pennsylvania State University, Department of Materials and
Processing Research Laboratory, University Park, PA; and Yuan-Min Li, Solarex
Corporation, Newton, PA.
H13.9 EFFECTS OF GERMANIUM ON GRAIN SIZE AND SURFACE ROUGHNESS
OF THE SOLID PHASE CRYSTALLIZED POLYCRYSTALLINE, Jin-Won Kim, Myung-Kwan
Ryu, Tae-Hoon Kim, Ki-Bum Kim and Sang-Joo Kim, Seoul National University,
Department of Metallurgical Engineering, Seoul, Korea.
H13.10 MATERIAL PROPERTIES OF SIPOS FILMS PREPARED BY XeCl
EXCIMER LASER ANNEALING OF a-Si:Nx FILMS, H.S. Choi, K.H. Jang, B.H. Min
and M.K. Han, Seoul National University, Department of Electrical Engineering,
Seoul, Korea.
H13.11 THE POLY-Si TFTS FABRICATED BY NOVEL OXIDATION METHOD
WITH INTERMEDIATE OXIDE, C.M. Park, B.H. Min and M.K. Han, Seoul
National University, Department of Electrical Engineering, Seoul, Korea.
H13.12 IMPROVEMENT OF POLY-SILICON THIN FILMS AND TFTS USING
ULTRASOUND TREATMENT, S. Ostapenko, J. Lagowski, L. Jastrzebski, University of
South Florida, Center for Microelectronics Research, Tampa, FL; R.
Smeltzer, David Sarnoff Research Center, Princeton, NJ.
H13.13 DEVICE CHARACTERISTICS OF POLY-SILICON THIN FILM
TRANSISTOR FABRICATED BY MILC AT LOW TEMPERATURE, Seok-Woon Lee and
Seung-Ki Joo, Seoul National University, Department of Metallurgical
Engineering, Seoul, Korea.
H13.14 ECR PLASMA OXIDATION OF AMORPHOUS SILICON FOR
IMPROVEMENT OF THE INTERFACE STATE IN A POLY SILICON THIN FILM TRANSISTOR,
Tae-Hyung Ihn, Seoul National University, Department of Metallurgical
Engineering, Seoul, Korea; Yoo-Chan Jeon, LG Semicon Corporation Ltd.,
Cheongiu, Korea; and Seung-Ki Joo, Seoul National University, Department of
Metallurgical Engineering, Seoul, Korea.
H13.15 NANOSTRUCTURE AND ELECTRICAL PROPERTIES OF ANODIZED Al
GATE INSULATORS FOR THIN-FILM TRANSISTORS, Satoshi Tsuji, Arai Toshiaki
and Hiromasu Yasunobu, IBM Japan, Ltd., Kanagawa, Japan.
H13.16 TFTs MADE BY ELECTROPHOTOGRAPHIC PATTERING, H.
Gleskova, E.Y. Ma, S. Wagner, Princeton University, Department of
Electrical Engineering, Princeton, NJ; and D.S. Shen, University of Alabama,
Huntsville, AL.
H13.17 IMPROVED a-Si:H TET PERFORMANCES USING
a-SixN1-x/a-SixC1-x STACK DIELECTIRCS, G. Lavareda, E. Fortunato, N.
Carvalho and R. Martins, FCT-UNI/CEMOP-UNINOVA, Monte de Caparica, Portugal.
LIQUID CRYSTAL DISPLAY MATERIALS AND PROCESSES
H13.18 Cr/Cr COMPOUND BILAYERED THIN FILM BLACK MATRIX FOR LCD
COLOR FILTER, Byung Hak Lee, Iee Gon Kim, Si-Hyun Lee and Sung Ki Kang,
Samsung Display Devices Company, Ltd., Research and Development Center,
Kyungki-Do, Korea.
H13.19 OPTIMIZED MATERIALS FOR A NEW REFLECTIVE COLOR LCD,
Wu Sheng, Guo Jianxin, Huang Ximin, Changchun Institute of Physics,
Liquid Crystal Department, Changchun, China.
H13.20 LIQUID CRYSTALLINE FERROELECTRIC POLYMER FILMS, I.
Sage, K. Blackwood, DRA Electronics Sector, Worcestershire, United Kingdom;
M. Verrall, D. Coates, Merck Ltd., Dorset, United Kingdom.
H13.21 COLOR ALIGNMENT LAYER FOR LDC, Hai Jing,
Changchun Institute of Physics Chinese Academy of Sciences, Department of
Liquid Crystal Laboratory, Changchun, China.
H13.22 STUDIES OF THERMAL STABILITY OF RUBBED POLYMIDE
ALIGNING LAYER, Qingbing Wang, Zhenjun Ma and Kai Ma, Changchun
Institute of Physics, Chinese Academy of Science, LC Laboratory, Changchun,
China.
H13.23 THE STUDY OF THE LIQUID CRYSTAL ALIGNMENT
CHARACTERISTICS, Jianxin Guo, Sheng Wu, Weishong Zhao, Ruipeng Sun,
Zhenjun Ma, Ximin Huang, Changchun Institute of Physics, Chinese Academy of
Sciences, Liquid Crystal Laboratory, Changchun, China.
H13.24 HYDROXYL AND ESTER FUNCTIONAL GROUP CONTRIBUTIONS IN
LIQUID CRYSTAL ALIGNMENT, Jean Yang and Curtis W. Frank, Stanford
University, Department of Chemical Engineering, Stanford, CA.
H13.25 CRYSTALLIZATION KINETICS OF AMORPHOUS Sn-DOPED INDIUM
OXIDE (ITO) THIN FILMS STUDIED USING TIME-RESOLVED REFLECTIVITY AND IN
SITU TEM TECHNIQUES, C.W. Ow-Yang, D. Spinner, Brown University,
Division of Engineering, Providence, RI; Y. Shigesato, University of Tokyo,
Institute of Industrial Science, Tokyo, Japan; and D.C. Paine, Brown
University, Division of Engineering, Providence, RI.
H13.26 A NEW BUMP CHIP TECHNOLOGY WITH A FOCUS ON FLAT PANEL
DISPLAYS, Everett Canning, Ranjan Dutta, AT&T Bell Laboratories,
Princenton, NJ.
EMMISIVE DISPLAYS
H13.27 IN-PLANE TRANSIENT PHOTOCONDUCTIVITY IN CONJUGATED
POLYMERS, R. Schwarz, S. Grebner, Technical University of Munich,
Department of Physics, Garching, Germany; W. Rieß, M. Meier and M.
Schwoerer, University of Bayreuth, Department of Physics and Bayreuth Institute
for Macromolecular Research (BIMF), Bayreuth, Germany.
H13.28 COLOR-VARIABLE LIGHT-EMITTING DIODE USING
Tb3+ COMPLEX, Gang Sun, Chinese Academy of Sciences,
Changchun Institute of Physics, Changchun, China.
H13.29 AN ORGANIC LUMINESCENT DIODE WITH SHARPER EMITTING BAND
OF RARE EARTH ION, Gang Sun, Chinese Academy of Sciences, Changchun
Institute of Physics, Changchun, China.
H13.30 TiO2:Ce/CeO2 HIGH PERFORMANCE INSULATORS FOR THIN FILM
ELECTROLUMINESCENT DEVICES, A. Bally, K. Prasad, R. Sanjinés,
P.E. Schmid, F. Lévy, EPFL, Institute of Applied Physics, Lausanne,
Switzerland; J. Benoit, C. Barthou and P. Benalloul, Université P. et M.
Curie, Laboratoire d'Acoustique et Optique de la Matiére
Condensée, Paris, France.
H13.31 DEGRADATION MECHANISMS AND VACUUM REQUIREMENTS FOR FED
PHOSPHORS, Paul H. Holloway, J. Sebastian, T. Trottier, S. Jones and H.
Swart, University of Florida, Department of Materials Science and Engineering,
Gainsville, FL.
H13.32 AN INVESTIGATION OF THE MICROSTRUCTURAL EVOLUTION OF
Zn2SiO4:Mn AND ITS EFFECT ON THE LUMINESCENCE CHARACTERISTICS, Peter
Mascher, McMaster University, Centre for Electrophotonic Materials and
Devices, Hamilton, Canada; G.A. Sloka and A.H. Kitai, McMaster University,
Department of Engineering Physics, Hamilton, Canada.
H13.33 METAL THIOCARBOXYLATES AS PRECURSORS FOR METAL
SULFIDES, Klaus Kunze and Mark J. Hampden-Smith, University of New
Mexico, Department of Chemistry and Center for Micro-Engineered Ceramics,
Albuquerque, NM.
H13.34 FORMATION OF GALLIUM SULFIDE THIN FILMS FROM
SINGLE-SOURCE PRECURSORS BY AEROSOL-ASSISTED CHEMICAL VAPOR DEPOSITION (AACVD),
Guihua Shang and Mark J. Hampden-Smith, University of New Mexico,
Department of Chemistry and Center for Micro-Engineered Ceramics, Albuquerque,
NM.
H13.35 NEGATIVE ION RESPUTTERING EFFECTS OF rf MAGNETRON
SPUTTER DEPOSITED OF CaxSr1-xGa2S4:Ce THIN FILM ELECTROLUMINESCENT (TFEL)
PHOSPHOR, Lance S. Robertson, Scott W. Bailey, Philip D. Rack and Paul
H. Holloway, University of Florida, Department of Materials Science and
Engineering, Gainesville, FL.
H13.36 THE USE OF SPRAY PYROLYSIS IN THE CONTROL OF
MICROSTRUCTURE AND RELATIONSHIP BETWEEN MICROSTRUCTURE AND PHOSPHORESCENCE IN
ADVANCED PHOSPHOR POWDERS, James Caruso, Mark J. Hampden-Smith and Toivo
T. Kodas, Nanochem Research, Inc., Albuquerque, NM.
H13.37 SYNTHESIS AND CHARACTERIZATION OF CONTROLLED
MICROSTRUCTURE ZnO PHOSPHOR POWDERS BY SPRAY PYROLYSIS, James Caruso,
Mark J. Hampden-Smith and Toivo Kodas, Nanochem Research, Inc., Albuquerque,
NM; K. Vanheusden, C.H. Seager, D.R. Tallant and W.L. Warren, Sandia National
Laboratories, Albuquerque, NM.
H13.38 OPTIMIZATION OF HEXA-ALUMINATE PHOSPHORS BY NOVEL
PROCESSING AND Ga SUBSTITUTIONS, R. Roy, D. Ravichandran and W.B. White,
Pennsylvania State University, Materials Research Laboratory, University Park,
PA.
H13.39 PHOTOLUMINESCENCE PROPERTIES OF -DOPED ZnS:Mn GROWN BY
METALORGANIC MOLECULAR BEAM EPITAXY, W. Park, T.K. Tran, W. Tong, S.
Schön, B.K. Wagner and C.J. Summers, Georgia Institute of Technology,
Phosphor Technology Center of Excellence, Manufacturing Research Center,
Atlanta, GA.
H13.40 OPTIMIZATION AND RESOLUTION OF FED PHOSPHOR SCREENS,
Fuli Zhang, Sen Yang, S.M. Jacobsen and C.J. Summers, Georgia Institute
of Technology, Manufacturing Research Center, Atlanta, GA.
H13.41 SILICON TIP ARRAYS WITH DIFFERENT COVERS FOR FLAT PANEL
DISPLAY APPLICATION, A.A. Evtukh, V.G. Litovchenko, R.I. Marchenko, M.I.
Klyui and A. Semenovich, Institute of Semiconductor Physics, Physical Bases of
Microelectronics, Kiev, Ukraine.
H13.42 PREPARATION OF SILICON AND DIAMOND TIP EMITTERS FOR
FLAT PANEL DISPLAYS BY ION BEAM ETCHING, A.N. Stepanova, E.S. Mashkova,
V.A. Molchanov and V.I. Muratova, Institute of Crystallography, Russian Academy
of Sciences, Moscow, Russia.
H13.43 GOLD OVERCOATINGS ON SPINDT-TYPE FIELD EMITTER ARRAYS,
Stephen Skala, Coloray Display Corporation, Fremont, CA; Douglas A.A.
Ohlberg, Alec A. Talin and Thomas E. Felter, Sandia National Laboratories,
Livermore, CA.
H13.44 FIELD EMISSION FROM SILICON WHISKER ARRAYS, Douglas
A.A. Ohlberg, Alec A. Talin and Thomas E. Felter, Sandia National
Laboratories, Livermore, CA; and E.I. Givargizov, Institute of Crystallography,
Moscow, Russia.
H13.45 DIAMOND FIBERS AS LINEAR ELECTRON EMITTERS FOR FLAT
PANEL DISPLAYS, John W. Glesener and Arthur A. Morrish, Naval Research
Laboratory, Optical Sciences Division, Washington, DC.
H13.46 PREPARATION OF SILICON-BASED FIELD EMISSION MATERIALS,
Guang Yuan, Yixin Jin, Changhun Jin, Hang Song, Baolin Zhang, Yongqiang
Ning, Hong Jiang, Tianming Zhou and Shuwei Li, Chinese Academy of Sciences,
Changchun Institute of Physics, Changchun, China.
H13.47 THE STUDYING OF THE MECHANISM OF LOWERING THE ELECTRON
WORK FUNCTION IN FILMS WITH DIFFERENT CARBON PHASES, O.E. Glukhova, Z.Ja.
Kosakovskaya, Sh.T. Mevlyut, N.I. Sinitsyn, G.V. Torgashov, A.G. Veselov
and A.I. Zhbanov, Russian Academy of Science, IRE, Saratov, Russia.
H13.48 ANALYSIS OF ELECTRON EMISSION MECHANISM FROM HFCVD
DIAMOND ON TUNGSTEN TIP OR PATTERNED METAL LAYER, Jae Yeob Shim, Eung
Joon Chi, Soon Joon Rho, and Hong Koo Baik, Yonsei University, Department of
Metallurgical, Seoul, Korea.
H13.49 p-AlN:C/n-6H-SiC HETEROJUNCTION DIODES, Christopher
I. Thomas and Michael Spencer, Howard University, MSRCE, Washington DC.
SESSION H14: ELECTROLUMINESCENT PHOSPHOR
Chairs: C. Summers and R. Ginerich
Friday Morning, April 12
Golden Gate C1
8:30 A.M. *H14.1
NEW DEVELOPMENTS IN ELECTROLUMINESCENT PHOSPHORS, B.K. Wagner, Georgia
Institute of Technology, Phosphor Technology Center of Excellence, Atlanta,
GA.
9:00 A.M. H14.2
IMPROVED GROWTH OF SrGa2S4 THIN FILM ELECTROLUMINESCENCE PHOSPHORS, H.W.
Schock, T.A. Oberacker and D. Braunger, Universität Stuttgart,
Institut für Physikalische Elektronik, Stuttgart, Germany.
9:15 A.M. H14.3
INVESTIGATION OF THE NUCLEATION AND GROWTH OF THIN-FILM PHOSPHORS, T.S. Moss,
R.W. Springer and Robert C. Dye, Los Alamos National Laboratories, Los
Almos, NM.
9:30 A.M. H14.4
PRECURSOR EFFECTS ON THE MOCVD OF SrS:Ce,M THIN FILMS, John A. Samuels,
Kenneth Salazar, Kerry N. Siebein, David C. Smith, Los Alamos National
Laboratory, Los Alamos, NM; Richard T. Tuenge and Christopher N. King, Planar
Systems, Inc., Beaverton, OR.
9:45 A.M. H14.5
SYNTHESIS OF CdS, ZnS AND CdxZn1-xS FILMS BY AEROSOL-ASSISTED CHEMICAL VAPOR
DEPOSITION (AACVD) OF NOVEL SINGLE-SOURCE PRECURSORS, May Nyman and Mark
J. Hampden-Smith, University of New Mexico, Department of Chemistry,
Albuquerque, NM.
10:00 A.M. H14.6
ELECTROLUMINESCENCE OF ZnS:Tm - REVISITED, Regina Mueller-Mach, Rene
Helbing, Sophie Chantrenne, Krzysztof W. Nauka and Gerd O. Mueller, Hewlett
Packard Laboratories, Electroluminescent Technology Department, Fremont, CA.
10:15 A.M. BREAK
SESSION H15: NANOCRYSTALLINE PHOSPHOR
Chairs: R. Ginerich and C. Summers
10:45 A.M. *H15.1
RARE EARTH DOPED NANOCRYSTALLINE PHOSPHORS FOR DISPLAYS, E.T. Goldburt
and R.N. Bhargava, Nanocrystals Technology, Briarcliff Manor, NY.
11:15 A.M. H15.2
CdSe/ZnS QUANTUM DOT COMPOSITES FOR ELECTROLUMINESCENT DEVICES, J.
Rodriquez-Viejo, B.O. Daboushi, M.G. Bawendi and K.F. Jensen, Massachusetts
Institute of Technology, Cambridge, MA.
11:30 A.M. H15.3
OPTICAL STUDIES OF LUMINESCENT ZINC SELENIDE NANOCRYSTALS IN POTASSIUM
BOROSILICATE GLASS MATRICES, Christine A. Smith, Subhash H. Risbud,
University of California, Davis, Department of Material Science, Davis, CA;
Howard W.H. Lee and J. Diane Cooke, Lawrence Livermore National Laboratory,
Livermore, CA.
11:45 A.M. H15.4
SILICON-RICH SILICA: A STABLE ALTERNATIVE TO POROUS SILICON AS AN
ELECTROLUMINESCENT MATERIAL, P. Trwoga, A.J. Kenyon and C.W. Pitt,
University College London, Department Electronic and Electrical Engineering,
London, United Kingdom.
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