Chairs
Stephen Campbell,University of Minnesota
Subramanian Iyer, SiBond
Ted Kamins, Hewlett-Packard Laboratories
Symposium Support
Office of Naval Research
*Invited Paper
SESSION F1: GROWTH AND STRUCTURE
Chairs: S.A. Campbell and E.A. Fitzgerald
Tuesday Morning, April 9
Sunset F
8:30 A.M. F1.1
IN-SITU RHEED OBSERVATION OF NUCLEATION AND SMOOTHENING OF {105}
Si1-xGex/Si(001) SUPPERLATTICES IN UHV-CVD, D.E. Savage, S. Nayak, T.F.
Kuech and M.G. Lagally, University of Wisconsin, Madison, WI.
8:45 A.M. F1.2
STRAIN STATUS AND SURFACE MORPHOLOGY OF SiGe HETERO-STRUCTURES, J.H. Li,
G. Springholz, F. Schäffler and G. Bauer, Institut für
Halbleiterphysik, Linz, Austria.
9:00 A.M. F1.3
TEMPERATURE DEPENDENCE OF THE INTERFACIAL ROUGHNESS IN Si/Si1-xGex
SUPERLATTICES GROWN BY RAPID THERMAL UHV-CVD, S. Nayak, D.E. Savage,
M.G. Lagally and T.F. Kuech, University of Wisconsin, Madison, WI.
9:15 A.M. F1.4
REDUCTION OF Ge SEGREGATION BY SURFACTANTS DURING GROWTH OF SiGe SINGLE QUANTUM
WELLS, Hans Peter Zeindl, S. Nilsson, J. Klatt, D. Krüger and R.
Kurps, Institute of Semiconductor Physics, Frankfurt, Germany.
9:30 A.M. F1.5
EFFECT OF Ge ON B SEGREGATION FROM Si1-xGex QUANTUM WELLS, P.E.
Thompson, K. Hobart, Naval Research Laboratory, Washington, DC; D. Simons,
National Institute of Standards and Technology, Gaithersburg, MD, M. Gregg, T.
Kreifels, R. Hengehold and Y.K. Yeo, Air Force Institute of Technology, Wright
Patterson AFB, OH.
9:45 A.M. F1.6
DOPANT SEGREGATION AND DIFFUSION ON SIGE SURFACES, J.F. Nützel,
M. Holzmann and G. Abstreiter, Walter-Schottky-Institut, Garching,
Germany.
10:00 A.M. BREAK
10:30 A.M. F1.7
ARSENIC INCORPORATION FROM ARSINE AND ITS SURFACE SEGREGATION BEHAVIOUR IN Si
AND SiGe DURING GAS SOURCE MOLECULAR BEAM EPITAXY, M.-H. Xie, A.K. Lees,
J.M. Fernández, J. Zhang and B.A. Joyce, Imperial College, IRC for
Semiconductor Materials, London, United Kingdom.
10:45 A.M. F1.8
IN-SITU DOPED SIGE AND Si LAYERS DEPOSITED IN NARROW DEEP TRENCHES, G.
Ritter, J. Schlote, B. Tillack, D. Wolansky, Ch. Quick and D. Krüger,
Institute of Semiconductor Physics, Frankfurt (Oder), Germany.
11:00 A.M. F1.9
Si0.8Ge0.2 HETEROEPITAXIAL GROWTH ON Si(100) BY LASER INDUCED MELTING AND
CRYSTALLIZATION OF AMORPHOUS LASER DEPOSITED THIN FILMS, R. Serna,
A. Blasco, C.N. Afonso, Instituto de Optica, Madrid, Spain;
C. Ballesteros, E.P.S., Universidad Carlos III de Madrid, Madrid, Spain;
and T. Rodríguez, E.T.S.I. Telecomunicación, Madrid,
Spain.
11:15 A.M. F1.10
GROWTH OF SILICON-GERMANIUM BULK CRYSTALS WITHOUT DISLOCATIONS, Juergen
Wollweber and Detlev Schulz, Institut für Kristallzüchtung,
Berlin, Germany.
11:30 A.M. F1.11
HYDROGEN PASSIVATION OF Si/SiGe HETEROSTRUCTURES, V. Vekatraman, M.N.
Vijayaraghavan, Institute of Science, India, Department of Physics,
Bangalore, India; Jim Sturn and C.W. Lin, Princeton University, Department of
Electrical Engineering, Princeton, NJ.
11:45 A.M. F1.12
GROWTH KINETICS OF Si1-x-yGexCy ED MS ON Sr(100) WITH y>0.05 AND
T=450-560deg.C, Harald Jacobsson, Nicole Herbots, Sean Hearne, Joan
Xiang and Peihua Ye, Arizona State University, Department of Physics and
Astronomy, Tempe, AZ.
SESSION F2/B4: STRAIN RELAXATION/DISLOCATIONS IN GeSi
Chair: D.W. Greve
Tuesday Afternoon, April 9
Sunset E
1:30 P.M. *F2.1/B4.1
RELAXED GeSi/Si: MATERIAL LIMITS, DETECTORS AND TEMPLATES, E.A.
Fitzgerald, Massachusetts Institute of Technology, Department of Materials
Science and Engineering, Cambridge, MA.
2:00 P.M. *F2.2/B4.2
CORRELATION BETWEEN DISLOCATIONS AND ELECTRON TRANSPORT PROPERTIES IN Si/SiGe,
K. Ismail, IBM T.J. Watson Research Center, Yorktown Heights, NY.
2:30 P.M. F2.3/B4.3
ELECTRICAL CONDUCTIVITY TYPE CONVERSION DUE TO STRAIN-RELAXATION RELATED
DEFECTS IN GeSi/Si, P.N. Grillot, S.A. Ringel, Ohio State University,
Electronic Materials and Devices Laboratory and Department of Electrical
Engineering, Columbus, OH; E.A. Fitzgerald and J. Michel, Massachusetts
Institute of Technology, Department of Materials Science and Engineering,
Cambridge, MA.
2:45 P.M. F2.4/B4.4
ELECTRICALLY ACTIVE DISLOCATION-RELATED STATES IN RELAXED SiGe LAYERS, P.M.
Mooney, L.P. Tilly, C.P. D'Emic and J.O. Chu, IBM T.J. Watson Research
Center, Yorktown Heights, NY.
3:00 P.M. BREAK
3:30 P.M. F2.5/B4.5
INFLUENCE OF MISFIT DISLOCATION INTERACTIONS ON PHOTOLUMINESCENCE SPECTRA OF
SiGe ON PATTERNED Si, G.P. Watson, J.L. Benton, Y.H. Xie, AT&T Bell
Laboratories, Murray Hill, NJ; and E.A. Fitzgerald, Massachusetts Institute of
Technology, Department of Materials Science and Engineering, Cambridge, MA.
3:45 P.M. F2.6/B4.6
ELECTRICAL ACTIVITY OF DISLOCATIONS IN SiGe/Si STRUCTURES, Martin
Kitler, Institute of Halbleiter Physik, Frankfurt, Germany; and Victor
Higgs, Bio-Rad, Semiconductor Division, Hertfordshire, United Kingdom.
4:00 P.M. F2.7/B4.7
DISLOCATION NUCLEATION IN STRAINED LAYER EPITAXY: A BRITTLE-TO-DUCTILE
PHENOMENON? Steven Labovitz, David Pope, Pennsylvania State University,
Department of Materials Science and Engineering, Philadelphia, PA; and Ya-Hong
Xie, AT&T Bell Laboratories, Silicon Materials, Murray Hill, NJ.
4:15 P.M. F2.8/B4.8
REAL TIME MEASUREMENTS OF ELASTIC AND PLASTIC STRAIN KINETICS DURING SiGe MBE
GROWTH, J.A. Floro, E. Chason and S.R. Lee, Sandia National
Laboratories, Albuquerque, NM.
4:30 P.M. F2.9/B4.9
SOI-BASED COMPLIANT SUBSTRATES-A NEW APPROACH TO HETEROEPITAXY, S.S.
Iyer, SiBond L.L.C., Hopewell Junction, NY; F.J. Guarin, IBM
Microelectronics Division, Hopewell Junction, NY; Z. Yang and W.I. Wang,
Columbia University, Department of Electrical Engineering, NY.
SESSION F3: SELECTIVE DEPOSITION AND
QUANTUM STRUCTURES
Chairs: D.G. Ast and K. Eberl
Wednesday Morning, April 10
Sunset F
8:30 A.M. F3.1
FACETING OF SIDEWALLS IN SELECTIVE EPITAXIAL GROWTH OF SI ON PATTERNED (110) SI
SUBSTRATES, Qi Xiang, Shaozhong Li, Dawen Wang, Kang Wang, University of
California, Electrical Department, Los Angeles, CA; Greg U'Ren and Mark
Goorsky, University of California, Department of Materials Science and
Engineering, Los Angeles, CA.
8:45 A.M. F3.2
SELECTIVE Si AND SiGe EPITAXY GROWN BY LPCVD WITHOUT THE USE OF CHLORINATED
SOURCE GASES, Janet M. Bonar and Gregory P. Parker, University of
Southampton, Electronics & C.S., Southampton, United Kingdom.
9:00 A.M. F3.3
GROWTH BY LPCVD OF STRAINED Si1-xGex/Si SUB-100 nm DOTS AND WIRES ON PATTERNED
(001) SUBSTRATES, Lili Vescan, Christel Dieker, Abdelkader
Souifí, Roger Loo and Paul Gartner, Institut für Schicht- und
Ionentechnik (ISI), Forschungzentrum Jülich, Germany.
9:15 A.M. *F3.4
STRESSES IN STRAINED GeSi STRIPES AND QUANTUM STRUCTURES: CALCULATION USING THE
FINITE ELEMENT METHOD AND DETERMINATION USING MICRO-RAMAN AND OTHER
MEASUREMENTS, S.C. Jain and H.E. Maes, IMEC, Leuven, Belgium.
9:45 A.M. BREAK
10:15 A.M. F3.5
NORMAL INCIDENCE PHOTODIODE USING SELF-ORGANIZED GROWTH OF SiGe DOTS ON Si,
P. Schittenhelm, C. Engel and G. Abstreiter, Walter-Schottky-Institut,
Garching, Germany.
10:30 A.M. F3.6
MBE OF Ge QUANTUM-DOTS ON Si(110) SURFACES, M. Krishnamurthy, Bi-Ke
Yang, Michigan Technology University, Houghton, MI; and Y-J. Li, Motorola
Corporate Research Labs, Phoenix, AZ.
10:45 A.M. F3.7
CHARACTERIZATION OF Ge ISLANDS ON Si (100) GROWN BY CHEMICAL VAPOR DEPOSITION,
E.C. Carr, T.I. Kamins, R.S. Williams, S.J. Rosner and K. Nauka,
Hewlett-Packard Laboratories, Palo Alto, CA.
11:00 A.M. F3.8
DLTS STUDY OF SIGE QW WITH HIGH GE CONTENT, K. Schmalz, I.N. Yassievich,
E.J. Collart, Institute of Semiconductor Physics, Frankfurt, Germany; and D.J.
Gravesteijn, Phillips Research Laboratories, Eindhoven, Netherlands.
11:15 A.M. F3.9
LOCAL ELECTRIC FIELD EFFECT IN SiGe QW STRUCTURES, K. Schmalz, S. Nilsson, I.N.
Yassievich, Institute of Semiconductor Physics, Frankfurt, Germany;
Chung-Yen Chang and Wen-Chung Tsai, National Chiao-Tung University,
Hsin-Chu, Taiwan.
11:30 A.M. F3.10
LOCAL STATES INDUCED IN SiGe QW BY B-DELTA DOPING, I.N. Yassievich,
Ioffe Physico-Technical Institute, St. Petersburg, Russia; K. Schmalz,
Institute of Semiconductor Physics, Frankfurt, Germany; K.L.Wang and Shawn
Thomas, University of California, Department of Engineering, Los Angeles,
CA.
SESSION F4: PROCESSING
Chairs: S.A. Iyer and S.C. Jain
Wednesday Afternoon, April 10
Sunset F
1:30 P.M. *F4.1
OXIDATION OF POLY-AND SINGLE-CRYSTALLINE Si-Ge FILMS, Dieter G. Ast,
William Edwards, Cornell University, Department of Materials Science and
Engineering, Ithaca, NY; and Ted Kamins, Hewlett Packard Palo Alto, CA.
2:00 P.M. F4.2
THE EFFECT OF FLUORINE ON THE DRY OXIDATION BEHAVIOR OF SiGe, S.J.
Kilpatrick, R.J. Jaccodine, Lehigh University, Department of Materials
Science and Engineering, Bethlehem, PA; and P.E. Thompson, Naval Research
Laboratory, Washington, DC.
2:15 P.M. F4.3
TIME-RESOLVED MEASUREMENTS AND MODELING OF SOLID-PHASE EPITAXIAL REGROWTH
DYNAMICS IN STRAINED GeSi ALLOYS, Xiaobiao Zeng and Michael O.
Thompson, Cornell University, Department of Materials Science and Engineering,
Ithaca, NY.
2:30 P.M. F4.4
EFFECTIVE DOPING OF PSEUDOMORPHIC GeSi LAYERS, Seongil Im and Marc
Nicolet, California Institute of Technology, Department of Applied Physics,
Pasadena, CA.
2:45 P.M. F4.5
FABRICATION OF LATERAL NPN-AND PNP-STRUCTURES FROM REMOTE DOPED Si/SiGe/Ge
QUANTUM WELLS BY MEANS OF A FOCUSED LASER BEAM, M. Holzmann, P.B.
Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, Technische
Universität München, Walter Schottky Institut, Garching, Germany; and
F. Schäffler, Daimler-Benz AG, Forschungsinstitut Ulm, Ulm, Germany.
3:00 P.M. BREAK
3:30 P.M. F4.6
DIFFUSION IN STRAINED AND RELAXED Si1-xGex, Per Kringhøj and Arne
Nylandsted Larsen, University of Aarhus, Institute of Physics and Astronomy,
Aarhus, Denmark.
3:45 P.M. F4.7
HIGH Ge FLUENCE ION BEAM PROCESSED SixGe1-x LAYERS DEFECT ANNIHILATION BY
SILICIDATION, K. Kyllesbech Larsen, F. La Via, S. Lombardo,
V. Raineri, CNR-IMETEM, Catania, Italy; R.A. Donaton, IMEC, Leuven,
Belgium; and S.U. Campisano, CNR-IMETEM, Catania, Italy.
4:00 P.M. F4.8
ION BEAM SYNTHESIS OF CoSi2 LAYERS IN Si65Ge35 ALLOY, G. Curello, R.
Gwilliam, M. Harry, B.J. Sealy, University of Surrey, Department of Electronic
and Electrical Engineering, Surrey, United Kingdom; and T. Rodriguez, Civdad
Universitaria, ESTI Telecomunicacion, Madrid, Spain.
4:15 P.M. F4.9
W-CONTACTS TO Si1-xGex,Si1-yCy AND Si1-x-yGexCy ALLOYS, M. Mamor,
V. Aubry-Fortuna, G. Villaret, F. Meyer,
D. Bouchier, Institut d'Electronique Fondamentale, CNRS, Université
Paris Sud, Orsay, France; S. Bodnar and J.L. Regolina, France Telecom
CNET, Meylan, France.
4:30 P.M. F4.10
Ti METALLIZATION OF Si1-xGex AND Si1-x-yGexCy STRAINED EPILAYERS GROWN ON Si,
A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Solid State Institute,
Technion-Israel Institute of Technology, Haifa, Israel; Z. Atzmon, David J.
Smith and J.W. Mayer, Arizona State University, Center for Solid State Science,
Tempe AZ.
4:45 P.M. F4.11
DEGRADATION AND RECOVERY OF Si1-xGex DEVICES AFTER PROTON IRRADIATION, H.
Ohyama, Kumamoto National College of Technology, Nishigoshi Kumamoto,
Japan; J. Vanhellemont, IMEC, Leuven, Belgium; Y. Takami, Rikkyo University,
Kanagawa, Japan; K. Hayama, Kumamoto National College of Technology, Nishigoshi
Kumamoto, Japan; H. Sunaga, I. Nashiyama, Takasaki JAERI, Gunma, Japan; Y.
Uwatoko, Saitama University, Saitama, Japan; J. Poortmans and M. Caymax, IMEC,
Leuven, Belgium.
SESSION F5: POSTER SESSION
GeSi AND RELATED COMPOUNDS
Chairs: T.I. Kamins and S.S. Iyer
Wednesday Evening, April 10
8:00 P.M.
Presidio Ballroom
F5.1 Ge QUANTUM DOTS ON Si, Vladimir Markov, Alexandr
Nikitorov, Institute of Semiconductor Physics, MBE, Novosibirsk, Russia.
F5.2 COMPARISON OF Co SILICIDATION ON SiGe AND SiGeC ALLOYS,
R.A. Donaton, K. Maex, IMEC, Leuven, Belgium; A. Vantomme, Institut voor
Kern- en Stralingsfysika, Leuven, Belgium; A. St. Amour, J.C. Sturm, Princeton
University, Department of Electrical Engineering, Princeton, NJ.
F5.3 COMPARISON OF STRAIN AND DISLOCATION-DENSITY IN LARGE-AND
SMALL-AREA Si1-xGex/Si(100) HETEROSTRUCTURES, B. Hollander, L. Vescan,
St. Mesters, S. Wickenhauser and S. Mantl, KFA Julich GmbH, Institut fur
Schicht- und Ionentechnik, Julich, Germany.
F5.4 VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE Ge
PREPARED BY OXIDATION OF SiGe LAYERS, Valentin Craciun, Institute of Atomic
Physics, Lasers Department, Bucharest, Romania; Pascal Andreazza, Chantal
Boulmer-Leborgne, GREMI, University of Orleans, Faculte des Sciences, Orleans,
France; Edward J. Nicholls, University of Hull, Applied Physics, Hull, United
Kingdom; and Ian W. Boyd, University College London, Electronics and
Electrical Engineering Department, London, United Kingdom.
F5.5 PHOTOLUMINESCENCE OF Ge1-xCx ALLOYS GROWN ON (100) Si
SUBSTRATES, Al-Sameen T. Khan, Brad A. Orner, Paul R. Berger, James
Kolodzey, University of Delaware, Department of Electrical Engineering,
Newark, DE; Fernando J. Guarin, IBM Microelectronics Division, Hopewell
Junction, NY; and Subramanian S. Iyer, SiBond L.L.C., Hopewell Junction, NY.
F5.6 LOW-TEMPERATURE (200deg.C) MBE GROWTH OF Ge1-xCx ALLOYS
ON Si (100), Bi-Ke Yang, A.W. Mathews and M. Krishnamurthy, Michigan
Technological University, Houghton, MI.
F5.7 CARBON EFFECTS ON THE BANDSTRUCTURE IN STRAINED Si1-yCy
LAYERS GROWN PSEUDO-MORPHICALLY ON Si(001), Myeongcheol Kim, H.J. Osten,
G. Lippert, S. Nilsson, Institute of Semiconductor Physics,
Frankfurt, Germany.
F5.8 A COMPARISON OF ELECTRON MICROSCOPY TECHNIQUES FOR
CHARACTERIZING SiGe LAYERS, T. Walther, C.B. Boothroyd, R.E.
Dunin-Borkowski and C.J. Humphreys, University of Cambridge, Department of
Materials Science and Metallurgy, Cambridge, United Kingdom.F5.9
OBSERVATION OF IMPURITY ENHANCED INTERMIXING IN Si1-xGe/Si QUANTUM WELL
STRUCTURE, C.C. Li, K.Y. Hsieh, National Sun Yat-Sen University,
Institute of Materials Science and Engineering, Kaohsiung, Taiwan; D.P. Wang,
National Sun Yat-Sen University, Department of Physics, Kaosiung, Taiwan; W.C.
Tsai and C.Y. Chang, National Chiaou Tung University, Institute of Electronics,
Hsinchu, Taiwan.
F5.10 EPITAXIAL GROWTH OF Si(111) AT BURIED INTERFACES USING
SOLID-METAL MEDIATED MOLECULAR BEAM EPITAXY (SMM-MBE), M.-A. Hasan,
University of North Carolina, Department of Electrical Engineering, Charlotte,
NC; J.E. Sundgren, University of Linköping, Physics Department,
Linköping, Sweden; and I.E. Greene, University of Illinois, Department of
Coordinated Science Laboratory, Urbana, IL.
F5.11 STRAINED SiGe CHANNELS OPTIMISATION FOR P TYPE MOSFET
APPLICATIONS, L. Garchery, I. Sagnes, Y. Campidelli and P.-A. Badoz,
France Telecom-Cnet, Meylan, France.
F5.12 PHOTOLUMINESCENCE INVESTIGATION OF INTERMIXING BY RTA IN
"AS GROWN" AND "Si IMPLANTED" SiGe QUANTUM WELLS, H. Lafontaine, D.
Labrie, National Researcfh Council of Canada, Ottawa, Canada; R.D. Goldberg,
University of Western Ontario, London, Canada; D.C. Houghton, N.L. Rowell, G.C.
Aers, S. Charbonneau, National Research Council of Canada, Ottawa, Canada; and
I.V. Mitchell, University of Western Ontario, London, Canada.
F5.13 Ge CONCENTRATION PROFILE IN THE LEADING EDGE OF SiGe
ALLOYS GROWN BY MBE, Glenn G. Jernigan, Phillip E. Thompson, Conrad L.
Silvestre, Jim V. Lill, Karl D. Hobart, Naval Research Laboratory, Solid State
Devices, Washington DC.
F5.14 CHARACTERIZATION OF SiGe MATERIALS BY SIMS, A.V.
Li-Fatou, I.C. Ivanov, Charles Evans and Associates, Redwood City, CA.
F5.15 IN-SITU BORON DOPED POLYCRYSTALLINE SILICON-GERMANIUM
FILMS FORMED ON SiO2 USING RAPID THERMAL CHEMICAL VAPOR DEPOSITION PROCESS,
V.Z-O Li, M.R. Mirabedini, R.T. Kuehn, D. Gladden,
D. Batchelor, D. Venables, K. Christenson, J.J. Wortman, M.C.
Ozturk, D.M. Maher, North Carolina State University, Department of Electrical
and Computer Engineering, Raleigh, NC.
F5.16 THE OPTOELECTRONIC PROPERTIES a-SiGe:H ALLOY DEPOSITED
BY MAGNETRON ASSISTED SILANE DECOMPOSITION, V.Kh. Kudoynrova, N.A.
Roguohev, J.T. Terukov, Ioffe Physico-Technical Institute, St. Petersburg,
Russia; and E.I. Milichevich, M.V. Lomonosov State University, Moscow,
Russia.
F5.17 CORRELATION BETWEEN ION CHANNELING MINIMUM YIELD AND
DISLOCATION DENSITY OF HETEROEPITAXIAL Si1-xGexFILMS AS MEASURED BY ATOMIC
FORCE MICROSCOPY, Harald Jacobsson, Nicole Herbots, Shawn Whaley and
Joan Xiang, Arizona State University, Department of Physics and Astronomy,
Tempe, AZ.
F5.18 ELECTRONIC PROPERTIES AND DIFFUSION BEHAVIOR OF Au AND
Zn IN Si1-xGx ALLOYS, Hartmut Bracht, Axel Giese, Stephen Voss, Nicolaas
A. Stolwijk, Institut fuer Metallforschung, Muenster, Germany; and Juergen
Wollweber, Institut fuer Kristallzuechtung, Berlin, Germany.
F5.19 INTERFACES IN Si/Ge MULTILAYERS: EFFECT OF GROWTH
TEMPERATURE, J.-M. Baribeau, R.W.G. Syme and D.J. Lockwood, Institute
for Microstructural Sciences, National Research Council, Ottawa, Canada.
F5.20 XPD STUDY OF THE EARLY STATES OF Ge/Si(001) INTERFACE
FORMATION, I. Davoli, R. Gunnella, M. De Crescenzi,
Universita' di Camerino, Dip. di Fisica, INFM, Camerino, Italy.
F5.21 VERY HIGH MOBILITY IN P-TYPE Si/SiGe MODULATION-DOPED
HETEROSTRUCTURES, Chun-Yen Chang, National Nano-Device Laboratory, Hsinchu,
China; Wen-Chung Tsai, National Chlao Tung University and Institute of
Electronics, Hsinchu, China; F.F. Fang, Center for Condensed Matter Sciences,
Taipei, China; and Y.H. Chang, National Taiwan University, Department of
Physics, Taipei, China.
F5.22 FABRICATION OF NANOSCALE SILICON WIRES BASED ON SiGe/Si
HETEROSTRUCTURE, Jianlin Liu, Youdou Zheng, Y. Shi, F. Wang, Y. Lu, R.
Zhang, S.L. Gu, P. Han, and L.Q. Hu, Nanjing University, Physics Department,
Nanjing, China.
SESSION F6: PROPERTIES AND DEVICES
Chairs: T.I. Kamins and J. Sturm
Thursday Morning, April 11
Sunset F
PROPERTIES
8:30 A.M. *F6.1
IN-SITU AND POST DEPOSITION CHARACTERIZATION OF SiGe ALLOYS USING OPTICAL
TECHNIQUES, C. Pickering, DRA Malvern, Malvern, United Kingdom.
9:00 A.M. F6.2
OBSERVED CONFINEMENT ALONG THE (111) DIRECTION IN Si/Si1-xGex
(0.17<x<0.23) QUANTUM WELLS USING PHOTOREFLECTANCE, David J. Hall,
University of Surrey, Department of Physics, Surrey, United Kingdom; and Roger
T. Carline, Defence Research Agency, Worcestershire, United Kingdom.
9:15 A.M. F6.3
PHOTORESPONSE AND ABSORPTION MEASUREMENTS ON Si/Si1-xGex MULTI-QUANTUM WELL
STRUCTURES GROWN ON (100) AND (110) Si, Michael R. Gregg, Robert L.
Hengehold, David E. Weeks, Yung Kee Yeo, Air Force Institute of Technology,
Department of Engineering Physics, WPAFB, OH; Philip E. Thompson, M. Fatemi,
Naval Research Laboratory, Washington DC; and Conrad Silvestre, Naval Research
Laboratory, ASEE Postdoctoral Fellow, Washington DC.
9:30 A.M. F6.4
SPECTROSCOPIC ELLIPSOMETRY AND BAND STRUCTURE OF Si1-x-yGexCy ALLOYS,
Rüdiger Lange, Kelly E. Junge, Iowa State University, Department of
Physic and Astronomy, Ames, IA; Anthony A. Affolder, Ames Laboratory,
Department of Condensed matter Physics, Ames, IA; Stefan Zollner, Iowa State
University, Department of Physics and Astronomy, Ames, IA; S.S. Iyer, SiBond
LLC, Hopewell Junction, NY; A.P. Powell, ATMI, Danbury, CT; and K. Eberl,
MPI-FKF, Stuttgart, Germany.
9:45 A.M. F6.5
MECHANICAL PROPERTIES OF Si-Ge, Si-Ge-C AND Si-Ge-B ALLOYS, B. Roos, H.
Richter, J.J. Osten, B. Tillack, Institut für Halbleiterphysik, Frankfurt,
Germany; J. Wollweber, Institut für Kristallzüchtung, Berlin,
Germany; and A. Wanner, Max-Planck-Institut für Metallforschung,
Stuttgurt, Germany.
10:00 A.M. BREAK
DEVICES
10:30 A.M. F6.6
A STUDY OF HALL AND FILED-EFFECT MOBILITIES IN AQ Si/Si0.8Ge0.2 P-CHANNEL MOS
HETEROSTRUCTURE, Robert J.P. Lander, C. John Ameleus, Evan C.H. Parker,
Terrance E. Whall, University of Warwick, Department of Physics, Coventry,
United Kindogm; Gary P. Kennedy, Roslina Sidek, Alan G. R. Evans,
Microelectronics Group, Department of Electronics and Computer Science,
Southampton, Uited Kingdom.
10:45 A.M. F6.7
OPTIMIZATION OF CRYSTAL GROWTH PARAMETERS FOR STRAINED Si LAYERS ON SiGe WITH
HIGH ELECTRON MOBILITIES, H.P. Zeindl and P. Gaworzewski, Institute of
Semiconductor Physics, Frankfurt, Germany.
11:00 A.M. F6.8
GeSi INFRARED DETECTORS, D.W. Greve, R. Strong, Carnegie Mellon
University, Pittsburgh, PA; M. Weeks, P. Pellegrini, Rome
Laboratories, Hanscom Air Force Base, MA.
11:15 A.M. F6.9
WAVEGUIDE/PHOTODETECTOR COMBINATION WITH Ge/Si/Si1-xGex QUANTUM WELLS FOR LONG
WAVELENGTH OPERATION, Hartmut Presting, Oliver Brux, Daimler-Benz
Research Center, Ulm, Germany; Thomas Zinke, Technical University of Berlin,
Department of Electrical Engineering, Berlin, Germany; and Horst Kibbel,
Daimler-Benz Research Center, Ulm, Germany.
11:30 A.M. F6.10
DARK CURRENTS OF P-SiGe INTERSUBBAND DETECTORS, R. Brederlow, J.F.
Nützel and G. Abstreiter, Walter-Schottky-Institut, Garching, Germany.
11:45 A.M. F6.11
THE COMMERCIAL APPLICATIONS OF SiGe TECHNOLOGY, Robert A. Metzger and
Marie Meyer, Compound Semiconductor Magazine, Saint Paul, MN.
SESSION F7: Si/Ge/C
Chairs: S.A. Campbell and C. Pickering
Thursday Afternoon, April 11
Sunset F
1:30 P.M. *F7.1
PROPERTIES OF PSEUDOMORPHIC Si1-yCy AND Si1-x-yGexCy ALLOY LAYERS ON Si, K.
Eberl and K. Brunner, Max-Planck-Institut, Stuttgart, Germany.
2:00 P.M. *F7.2
OPTICAL AND ELECTRICAL PROPERTIES OF Si1-x-yGexCy STRUCTURES GROWN BY RTCVD,
J.C. Storm, A. St. Amour, L.D. Laozerotti, C.L. Chang, Princeton
University , Department of Electrical Engineering, Princeton, NJ; T. Lacroix
and M.L. Thewalt, Simon Fraser University, Department of Physics, Buraby,
Canada.
2:30 P.M. F7.3
EPITAXIAL SiGeC FILMS GROWN BY ATMOSPHERIC PRESSURE AND LOW PRESSURE CHEMICAL
VAPOR DEPOSITION, James R. Dekker, University of California Davis,
Department of Chemical Engineering and Material Sciences, Davis, CA; McDonald
Robinson, Lawrence Semiconductor Laboratory, Tempe, AZ; and Charles E. Hunt,
University of California, Department of Electrical and Computer Engineering,
Davis, CA; Richard C. Westhoff, Lawrence Semiconductor Laboratory, Tempe,
AZ.
2:45 P.M. F7.4
UHV-CVD GROWTH OF HETEROEPITAXIAL Ge1-xCx ALLOYS ON SILICON USING NOVEL
DEPOSITION CHEMISTRY, Michael Todd, David J. Smith and John Kouvetakis,
Arizona State University, Department of Chemistry and Biochemistry, Tempe,
AZ.
3:00 P.M. BREAK
3:30 P.M. F7.5
STRAIN-ENGINEERED SiGeC MULTI-QUANTUM WELLS GROWN BY RTCVD, Patricia
Warren, Michel Dutoit, EPEL, Department of Physics, Lausanne, Switzerland;
Georoes Brémond, INSA, LPM, Villeurbanne, France; Jean Daniel Ganiero
EPFL, Department of Physics, Lausanne, Switzerland; Philippe Boucaud, Jean
Michel Lourtioz, IEF, France.
3:45 P.M. F7.6
Si1-x-yGexCy/Si HETERO-STRUCTURES GROWN BY RAPID THERMAL CHEMICAL VAPOR
DEPOSITION, Jian Mi, Ashawant Gupta and Cary Yang, Santa Clara
University, Department of Electrical Engineering, Santa Clara, CA; M. Dutoit
and P. Warren, Swiss Federal Institute of Technology, EPFL Lausanne, Institute
de Micro et Optoelectron, Lausanne, Switzerland.
4:00 P.M. F7.7
BAND STRUCTURES AND OFFSETS OF ORDERED CxSi1-x-yGey STRUCTURES, Marcey
Berrding, M. van Schilfgaarde and A. Sher, SRI International, Physical
Electronics Laboratory, Menlo Park, CA.
4:15 P.M. F7.8
PSEUDOMORPHIC Si1-x-yGexCy PIN DIODES WITH LOW LEAKAGE CURRENT, A. St.
Amour and J.C. Sturm, Princeton University, Department of Electrical
Engineering, Princeton, NJ.
4:30 P.M. F7.9
GROWTH OF TERNARY AND QUATERNARY Si/Ge/C/Sn ALLOYS BY MOLECULAR BEAM EPITAXY,
F.J. Guarin, IBM Microelectronics Division, Hopewell Junction, NY; and
S.S. Iyer, SiBond L.L.C., Hopewell Junction, NY.
4:45 P.M. F7.10
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF Ge1-2Cx CUBIC HETEROSTRUCTURES On
Si, Xiaoping Shao, S. Rommel, B. Orner, F. Chen, Paul R. Berger and J.
Kolodzey, University of Deleware, Department of Electrical Engineering, Newark,
DE.
SESSION F8: LATE NEWS
Thursday Afternoon, April 10
5:00 P.M.
Sunset F Ballroom
Late news papers of exceptional quality will be considered for a special late
news session to be held Thursday evening. In order to be considered for this
session, your abstract must be received at MRS Headquarters no later than
Friday, March 8, 1996.
The following exhibitors have identified their products and services as
directly related to your research:
Academic Press
American Institute of Physics
Bede Scientific
CVC Products, Inc.
Elsevier Science, Inc.
IOP Publishing, Inc.
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
n & k Technology, Inc.
Omicron Associates
Oxford Applied Research
Philips Semiconductors/Materials Analysis Group
Research & PVD Materials Corp.
South Bay Technology, Inc.
Staib Instruments, Inc.
Thermionics Laboratory, Inc.
Voltaix, Inc.
See page 6 for a complete list of exhibitors.