Symposium A: Amorphous Silicon Technology

Chairs

Michael Hack, Xerox Palo Alto Research Center
Rudd Schropp, Utrecht University
Eric A. Schiff, Syracuse University
Akihisa Matsuda, Electrotechnical Laboratory
Sigurd Wagner, Princeton University

Symposium Support

• Materials Research Group
• Sharp Corporation
• Mitsui-Toatsu Chemicals, Inc.
• Sanyo Electric Co. Ltd.
• Fuji Electric Corporate Research & Development Ltd.

TUTORIAL
STA: AMORPHOUS SILICON MATERIALS AND
DEVICES FOR LARGE AREA ELECTRONICS
Instructors: Robert Street, Xerox Palo Alto Research Center
Michael Hack, Palo Alto Research Center
Monday, April 8, 8:30 A.M. - 4:30 P.M.
Golden Gate C3

*Plasma growth of a-Si:H and related materials
*Electronic and structural properties
*Metastability effects in materials and devices
*Sensor and transistor devices
*Solar cell and large area display technology

Hydrogenated amorphous silicon (a-Si:H) is an important technological
material for large area electronics, with applications to solar cells,
liquid crystal displays, optical scanners and radiation imaging. The course
describes the growth, material properties, device physics and large area
array technology of amorphous silicon. The relation between material
properties and device performance of a-Si:H is emphasized.


*Invited Paper

Related Symposia: H: FLAT PANEL DISPLAY MATERIALS; and J: THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS

JOINT SESSION A1/J3: AMORPHOUS FILMS
Chairs: P.Craig Taylor and Liyou Yang
Monday Afternoon, April 8
Golden Gate C3

1:30 P.M. *A1.1/J3.1
TECHNOLOGICAL DEVELOPMENT FOR COMMERCIALIZATION OF a-Si:H BASED MULTIJUNCTION MODULES, Liyou Yang, M. Bennett, L. Chen, K. Jansen, Y. Li, J. Newton, K. Rajan, F. Willing, R. Arya and D. Carlson, Solarex, A Business Unit of Amoco/Enron Solar, Newtown, PA.

2:00 P.M. A1.2/J3.2
INHIBITION OF METAL INDUCED CRYSTALLIZATION IN THE SYSTEM Ag/ZnO/a-Si:H, F. Edelman, R. Brener, C. Cytermann, R. Weil, Solid State Institute, Technion-israel Institute of Technology, Haifa, Israel, C. Beneking and W. Beyer, Institut für Schicht-und Ionentechnik, Forschungszentrum, Jülich, Jülich, Germany.

2:15 P.M. A1.3/J3.3
MEASURED AND SIMULATED TEMPERATURE DEPENDENCE OF A-Si:H SOLAR CELL PARAMETERS, Th. Eickhoff, H. Stiebig, W. Reetz, C. Beneking and H. Wagner, Forschungszentrum Jülich GmbH, Jülich, Germany.

2:30 P.M. A1.4/J3.4
IMPROVEMENT OF THE ITO-P INTERFACE IN a-Si:H SOLAR CELLS USING A THIN SiO INTERMEDIATE LAYER, C.N. Carvalho, I. Ferreira, E. Fortunato and R. Martins, FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, Portugal.

2:45 P.M. A1.5/J3.5
THE STABILITY IMPROVEMENT OF a-Si:H FILMS FOR PHOTOTVOLTAIC APPLICATIONS, Boris G. Budaguan, Arcady A. Aivazov and Mark N. Meytin, Moscow Institute of Electronic Technology Department of Microtechnology, Moscow, Russia.
3:00 P.M. BREAK

3:30 P.M. *A1.6/J3.6
THE POTENTIAL OF HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS FOR ABSORBER MATERIALS IN PHOTOVOLTAIC DEVICES, Craig P. Taylor, University of Utah, Department of Physics, Salt Lake City, UT.

4:00 P.M. A1.7/J3.7
a-Si:H FILMS FROM DICHLOROSILANE: DEPOSITION SPACE AND FILM PROPERTIES, A.M. Payne and S. Wagner, Princeton University, Princeton, NJ.

4:15 P.M. A1.8/J3.8
A SIMPLE OPTICAL PROPERTIES MODELING OF MICROCRYSTALLINE SILICON BY EFFECTIVE MEDIUM APPROXIMATION METHOD, Woo Yeong Cho, Koeng Su Lim, KAIST, Department of Electrical Engineering, Taejon, Korea; and Hyun Mo Cho, KRISS, Department of Optics Laboratory, Taejon, Korea.

4:30 P.M. A1.9/J3.9
PRESSURE CONTROLLED mc TO AMORPHOUS TRANSITION IN HOT-WIRE THIN FILMS, E. Terzini, C. Minarini, G. Fameli, V. Barbarossa, R. Polini, G. Mattei and A. Eray, ENEA, Energy a-Si Division, Portici, Italy.

4:45 P.M. A1.10/J3.10
NANO-SCALE RESOLVED DETECTION OF PHOTO-CURRENT IN a-Si:H FILMS, Takashi Koida, Masashi Kawasaki, Mitsutaka Matsuse and Hidcomi Koinuma, Tokyo Institute of Technology, Research Laboratory of Engineering Materials, Yokohama, Japan

JOINT SESSION A2/H1: THIN FILM TRANSISTORS I
Chair: Michael Hack
Tuesday Morning, April 9
Golden Gate C2

8:30 A.M. *A2.1/H1.1
AMORPHOUS SILICON TFT'S AND FLAT PANEL DISPLAYS, Toshihisa Tsukada, Hitachi, Ltd., Central Research Laboratory, Tokyo, Japan.

9:00 A.M. *A2.2/H1.2
FLAT PANEL DISPLAYS, Malcolm Thompson, Xerox Palo Alto Research Center, Palo Alto, CA.

9:30 A.M. A2.3/H1.3
A NOVEL DEVICE STRUCTURE FOR HIGH PERFORMANCE, HIGH VOLTAGE AMORPHOUS SILICON THIN-FILM TRANSISTORS, Amir M. Miri, Prasad S. Gudem and Savvas G. Chamberlain, University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Canada.

9:45 A.M. A2.4/H1.4
THE FABRICATION AND PERFORMANCE OF NOVEL HIGH VOLTAGE POLYSILICON THIN FILM TRANSISTOR STRUCTURES INCORPORATING A SEMI-INSULATING FIELD PLATE, F.J. Clough, Y. Chen, W.I. Milne, University of Cambridge, Engineering Department, Cambridge, United Kingdom; E.M. Sankara Narayanan, De Montfort University, Emerging Technologies Centre, Leicester, United Kingdom; and W. Eccleston, University of Liverpool, Electrical Engineering Department, Liverpool, United Kingdom.

10:00 A.M. BREAK

JOINT SESSION A3/H2: THIN FILM TRANSISTORS II
Chair: Miltiadis K. Hatalis

10:30 A.M. *A3.1/H2.1
HIGH DEPOSITION RATE a-Si:H FOR THE FLAT PANEL DISPLAY INDUSTRY, J. Hautala, Z. Saleh, J.F.M. Westendorp, Tokyo Electron America, Beverly, MA; J. Souk, IBM T.J. Watson Research Center, Yorktown Heights, NY; and H. Meiling, Utrecht University, Utrecht, Netherlands.

11:00 A.M. A3.2/H2.2
SURFACE ROUGHNESS OF SILICON-NITRIDE GATE INSULATORS DEPOSITED IN A 40-MHZ GLOW DISCHARGE, H. Meiling, W.F. van der Weg, Debye Institute Utrecht University, Department of Atomic and Interface Physics, Utrecht, Netherlands; J.J. Hautala and J.F.M. Westendorp, Tokyo Electron America, Inc., Beverly, MA.

11:15 A.M. A3.3/H2.3
HOT-WIRE DEPOSITED AMORPHOUS SILICON THIN-FILM TRANSISTORS, R.E.I. Schropp, K.F. Feenstra and H. Meiling, Utrecht University, Debye Institute, Utrecht, Netherlands.

11:30 A.M. A3.4/H2.4
BELOW THRESHOLD CURRENT DISTRIBUTION IN a-Si:H TFTs: BACK CHANNEL CONDUCTION, H.C. Slade, M.S. Shur, University of Virginia, Charlottesville, VA; S.C. Deane, Philips Research Laboratory, Surrey, United Kingdom; and M. Hack, Xerox Palo Alto Research Center, Palo Alto, CA.

11:45 A.M. A3.5/H2.5
CHARACTERISTICS OF XeCl EXCIMER-LASER ANNEALED INSULATOR, K.H. Jang, H.S. Chol and M.K. Hand, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

SESSION A4: GROWTH I
Chair: Greg Parsons
Tuesday Afternoon, April 9
Golden Gate C2

1:30 P.M. *A4.1
STM OBSERVATIONS ON THE INITIAL GROWTH OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS, K. Ikuta, Y. Toyoshima, S. Yamasaki, A. Matsuda and K. Tanaka, IRCAT-NAIR, Tsukuba, Japan.

2:00 P.M. A4.2
IN SITU ELLIPSOMETRIC STUDIES OF THE GROWTH OF a-Si:H FILMS PREPARED BY THE HOT WIRE DEPOSITION, Bernd Schroeder, Stefan Bauer and Rajif Dusane, University Kaiserslautern, Department of Physics, Kaiserslautern, Germany.

2:15 P.M. A4.3
REAL TIME CONTROL OF GROWING SURFACE WITH ATOMIC HYDROGEN TO FABRICATE NARROW GAP a-Si:H, S. Takeoka, W. Futako and I. Shimizu, Tokyo Institute of Technology, The Graduate School, Yokohama, Japan.

2:30 P.M. A4.4
PLASMA POST-HYDROGENATION OF AMORPHOUS SILICON AND GERMANIUM, M. Beyer and U. Zastrow, ISI-PV, Forschungszentrum Jülich, Jülich, Germany.

2:45 P.M. A4.5
THE INFLUENCE OF HYDROGEN DILUTION IN HOT-WIRE DEPOSITION WITH FILAMENT TEMPERATURES BETWEEN 1900deg.C AND 2500deg.C, J.P. Conde, P. Brogueira, Instituto Superior Técnico, Department of Physics, Lisbon, Portugal; and V. Chu, INESC, Lisbon, Portugal.

3:00 P.M. BREAK

SESSION A5: GROWTH II
Chair: Isamu Shimizu

3:30 P.M. *A5.1
LOW TEMPERATURE (<300deg.C) SUBSTRATE SELECTIVE PLASMA ENHANCED DEPOSITION OF SILICON, Gregory N. Parsons, North Carolina State University, Department of Chemical Engineering, Raleigh, NC.

4:00 P.M. A5.2
SELECTIVE DEPOSITION OF POLYSILICON AT LOW TEMPERATURE BY HOT-WIRE CVD, Shuangying Yu, Erdogan Gulari, University of Michigan, Department of Chemical Engineering, Ann Arbor, MI; and Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, MI.

4:15 P.M. A5.3
ON THE EFFECT OF SUBSTRATE TEMPERATURE ON a-Si:H DEPOSITION USING AN EXPANDING THERMAL PLASMA, R.J. Severens, H.J.M. Verhoeven, J. Bastiaanssen, M.C.M. van de Sanden and D.C. Schram, Eindhoven University of Technology, Department of Applied Physics, Eindhoven, Netherlands.

4:30 P.M. A5.4
MODIFIED TRIODE PLASMA CONFIGURATION ALLOWING PRECISE CONTROL OF ION-ENERGY FOR PREPARING HIGH MOBILITY a-Si:H, G. Ganguly, T. Ikeda, I. Sakata, A. Matsuda, Electrotechnical Laboratory, Non-Equilibrium Materials Section, Ibaraki, Japan; K. Kato, S. Iizuka and N. Sato, Tohoku University, Sendai, Japan.

4:45 P.M. A5.5
A-Si:H FILMS DEPOSITED BY DC-MASD TECHNIQUE AT HIGH SUBSTRATE TEMPERATURE, O.A. Golikova, A.N. Kuznetsov, V.Kh. Kudoyarova, M.M. Kazanin, A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia.

SESSION A6: POSTER SESSION
DEVICES, TRANSPORT AND INTERFACES
Chair: Eric A. Schiff
Tuesday Evening, April 10
8:00 P.M.
Presidio Ballroom

A6.1 FAST COLOR DETECTION WITH TWO-TERMINAL p-i-i-n DEVICES, T. Neidlinger, M.B. Schubert, G. Schmid and H. Brummack, Universität Stuttgart, Institut für Physikalische Elektronik, Stuttgart, Germany.

A6.2 OPTIMIZED THREE-COLOR DETECTOR BASED ON a-SiGe:H HETEROJUNCTIONS, H. Stiebig, J.Fölsch, F. Finger and H. Wagner, ISI-PV, Forschungszentrum, Juelich, Germany.

A6.3 PHASE SEPARATION BY RAPID THERMAL ANNEALING IN Si-SUB-OXIDES AND -NITRIDES FORMED BY PLASMA CVD, A. Banerjee and G. Lucovsky, North Carolina State University, Departments of Materials Science and Engineering, Physics and Electrical and Computer Engineering, Raleigh, NC.

A6.4 LOW FREQUENCY NOISE BEHAVIOR IN a-Si:H SCHOTTKY BARRIER DEVICES, Koorosh Aflatooni, Richard Hornsey and Arokia Nathan, University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Canada.

A6.5 DEFECT DENSITY-OF-STATES IN a-Si:H TFTs, Tatiana Globus, Boris Gelmont, Liang Quan Sun, Robert J. Mattauch, University of Virginia, Charlottesville, VA.

A6.6 AMORPHOUS SILICON-CARBON THIN FILM P-I-N STRUCTURES FOR LIQUID-CRYSTAL SPATIAL LIGHT MODULATORS, N.A. Feoktistov, N.L. Ivanova, L.E. Morozova, Yu.A. Nikulin, A.P. Onochov, A.B. Pevtsov, A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia; and R. Schwarz, Technical University of Munich, Physics Department, Garching, Germany.

A6.7 IMPROVED MONOLITHIC PHOTOVOLTAIC-ELECTROCHROMIC DEVICES INCORPORATING AN a-SiC:H SOLAR CELL, John N. Bullock, Clemens Bechinger, David K. Benson and Howard M. Branz, National Renewable Energy Laboratory, Golden, CO.

A6.8 TRANSIENT BEHAVIOR OF COLOR DIODES, Jürgen Giehl, Peter Rieve, Qi Zhu and Markus Böhm, Universität-GH-Siegen, Institut für Halbleiterelektronik, Siegen, Germany.

A6.9 FROM INTELLIGENT MATERIALS TO SMART SENSORS: a-Si:H VS POSITION SENSITIVE DETECTORS, E. Fortunato, F. Soares, M. Fernandes, G. Lavareda and R. Martins, FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, Portugal.

A6.10 EXAMINATION OF 1-D POSITION SENSITIVE DETECTORS PERFORMANCES THROUGH ANALYSIS OF FRONT CONTACT HETEROJUNCTION, Marko Topic, University of Ljubljana, Ljubljana, Slovenia; Franc Smole, Joze Furlan, Elvira Fortunato; and Rodrigo Martins, FCT-UNL/ CEMOP-UNINOVA, Ljubljana, Slovenia.

A6.11 PARTIAL DEPLETION-REGION COLLAPSE AND ITS IMPACT ON TRANSIENT CAPACITANCE EXPERIMENTS, K. Lips, T. Unold, H.M. Branz, Y. Xu and R.S. Crandall, NREL, Department of Physics, Golden, CO.

A6.12 TRANSIENT PHOTOCONDUCTIVITY OF a-Si:H AT LOW TEMPERATURES INDUCED BY BANDGAP LIGHT, S. Heck, P. Stradins and H. Fritzsche, University of Chicago, James Franck Institute, Chicago, IL.

A6.13 MONTE CARLO SIMULATION OF TRANSIENT CURRENT IN a-Si:H, Louis-André Hamel and Wen Chao Chen, University of Montreal, Physics Department, Montreal, Canada.

A6.14 KINETICS BOTH DEFECTS AND ELECTRON, HOLE DIFFUSION LENGTHS DURING LIGHT-SOAKING IN a-SiH FILMS, Alexej Abramov, Andrej Kosarev, Ioffe Institute, Department of Solid State Electronics, St. Petersburg, Russia; Pere Roca i Cabarrocas, Ecole Polytechnique, LPICM, Palaiseau, France; and Andrej Vinogradov, Ioffe Institute, Academy of Science, St. Petersburg, Russia.

A6.15 HOLE DRIFT IN a-Si:H PREPARED BY HOT-WIRE DEPOSITION, Qing Gu, Syracuse University, Department of Physics, Syracuse, NY; R.S. Crandall, E. Iwaniczko, A.H. Mahan and B. Nelson, National Renewable Energy Laboratory, Golden, CO.

A6.16 PHOTOCONDUCTIVITY DURING 30 ns LASER PULSES IN a-Si:H AS A FUNCTION OF DOPING AND TEMPERATURE, N. Kopidakis, P. Tzanetakis, FORTH, Institute of Electrical Structure and Laser, Heraklion, Greece; H. Fritzsche, P. Stradins, University of Chicago, James Franck Institute, Chicago, IL.

A6.17 IMPLICATIONS OF SHORT ELECTRON SCATTERING LENGTHS IN AMORPHOUS MATERIALS, C.M. Fortmann, State University of New York at Stony Brook, Department of Applied Mathematics and Statistics, Stony Brook, NY.

A6.18 TEMPERATURE DEPENDENCE OF MINORITY CARRIER LIFETIMES IN a-Si:H, Glenn T. Hefter, John Cornish and Philip Jennings, Murdoch University, Murdoch, Australia.

A6.19 ELECTRICAL TRANSPORT MECHANISMS IN p⁺-a-SiC:H/(n) c-Si HETEROJUNCTIONS, M.W.M. van Cleef, M.W.H. Philippens, F.A. Rubinelli, M.A. Kolter and R.E.I. Schroop, Utrecht University, Department of Atomic & Interface Physics, Utrecht, Netherlands.

A6.20 ADMITTANCE OF a-Si:H/C-Si SCHOTTKY DIODES, Stefan Gall, Reinhold Hirschauer and Dieter Bruunig, Hahn-Meitner-Institut Berlin, Berlin, Germany.

A6.21 RELAXATION MEASUREMENTS OF THE PERSISTENT PHOTOCONDUCTIVITY IN SULFUR-DOPED a-Si:H, D. Quicker and J. Kakalios, University of Minnesota, School of Physics and Astronomy, Minneapolis, MN.

A6.22 1/f NOISE AND THERMAL EQUILIBRATION EFFECTS IN HOTWIRE DEPOSITED AMORPHOUS SILICON, G.M. Khera, J. Kakalios, University of Minnesota, School of Physics and Astronomy, Minneapolis, MN; Qi Wang and E. Iwaniczko, NREL, Golden, CO.

A6.23 HALL-EFFECT AND SIGN PROPERTIES IN HYDROGENATED AMORPHOUS AND DISORDERED SILICON, C.E. Nebel, M. Rother, Walter Schottky Institut, TU-München, Germany; C. Summonte, CNR-LAMEL, Bologna, Italy; and M. Stutzmann, Walter Schottky Institut, TU-München, Germany.

A6.24 STUDY OF RECOMBINATION PROCESS IN a-Si:H BY THE TEMPERATURE DEPENDENCE OF THE TWO CARRIERS PHOTOTRANSPORT PROPERTIES, Isaac Balberg, Yoram Lubianiker, Hebrew University, Racah Institute, Jerusalem, Israel; Zvi Weisz and Luis Fonseca, University of Puerto Rico, Department of Physics, Rio Piedras, PR.

A6.25 ANALYSIS OF THE CONDUCTION PROPERTIES OF a-Si:H n⁺-i-n⁺ STRUCTURES VIA AB INITIO COMPUTER MODELLING, Parsathi Chatterjee, Indian Association for the Cultivation of Science, Energy Research Unit, Calcutta, India; Regis Vanderhaghen and Bernard Equer, Ecole Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces, Palaiseau, France.

A6.26 OPTOELECTRONIC PROPERTIES OF THIN AMORPHOUS AND MICRO-CRYSTALLINE PLAYERS DEVELOPED FOR AMORPHOUS SILICON-BASED SOLAR CELLS, Karoline Winz, Bernd Rech, Thomas Eickhoff, Heribery Wagner, Peter Hapke, Claus Beneking, ISI, Department Photovoltaik, Juelich, Germany; and Charles M. Fortmann, State University of New York at Stony Brook, Department of Applied Mathematics and Statistics, Stony Brook, NY.

A6.27 THE STUDY OF SPACE CHARGE EFFECTS BY SPECTRAL RESPONSE, STEADY STATE CHARGE COLLECTION AND TRANSIENT PHOTOCURRENTS IN THICK a-Si:H p.i.n. DIODES, J.-H. Zollondz, Carl von Ossietzky Universitat, Fachbereich Physik, Oldenburg, Germany; W. Gao, University of Abertay, Dundee, Department of Electronic and Electrical Engineering, Dundee, United Kingdom; R. Brüggemann, Carl von Ossietzky Universitat, Fachbereich Physik, Oldenburg, Germany; S. Reynolds, C. Main, University of Abertay, Dundee, Department of Electronic and Electrical Engineering, Dundee, United Kingdom; and G.H. Bauer, Carl von Ossietzky Universitat, Fachbereich Physik, Oldenburg, Germany.

A6.28 EFFICIENCY IMPROVEMENT OF a-Si SOLAR CELLS DEPOSITED IN A SINGLE CHAMBER, LARGE AREA, PECVD REACTOR, E. Terzini, C. Privato, P. Mangiapane and T. Fasolino, ENEA-Centro Ricerche, Portici, Italy.

A6.29 H2-DILUTION VS. BUFFER LAYERS FOR INCREASED Voc, R. Platz, D. Fischer, C. Hof, S. Dubailm U. Kroll and A. Shah, University of Neuchâtel, Institut de Microtechnique, Neuchâtel, Switzerland.

A6.30 INVESTIGATION OF a-Si:H p-i-n SOLAR CELL DEGRADATION, Franc Smole, Ales Groznik, Marko Topic and Joze Furlan, University of Ljubljana, Faculty of Electrical Engineering, Ljubljana, Slovenia.

A6.31 STUDY OF a-Si:H/cSi HETEROJUNCTIONS FOR PV APPLICATIONS, F. Zignani, R. Galloni, R. Rizzoli, M. Ruth, C. Summonte, Q. Zini, LAMEL-CNR, Bologna, Italy; and A. Madan, MVSystems, Inc., Golden, CO.

A6.32 a-Si:H SOLAR CELLS DEPOSITED USING VHF-PECVD, W.G.J.H.M. van Sark, J. Bezemer, R. van der Heijden and W.F. van der Weg, Utrecht University, Debye Institute, Department of Atomic and Interface Physics, Utrecht, Netherlands.

A6.33 PLASMA-INDUCED CHANGES TO TCO/a-Si:H INTERFACES, J. Wallinga, Utrecht University, Debye Institute, Utrecht, Netherlands; D. Knoesen, University of Western Cape, Department of Physics, Bellville, South Africa; W.G.J.H.M. van Sark, W.F. van der Weg and R.E.I. Schropp, Utrecht University, Debye Institute, Utrecht, Netherlands.

A6.34 EFFECT OF u- DOPED COMPENSATED MATERIAL ON STABILITY OF a-Si:H SOLAR CELLS, D. Caputo, G. de Cesare and F. Palma, University of Rome "La Sapienza", Department of Electronic Engineering, Roma, Italy.

A6.35 THE EFFECT OF HYDROGEN DILUTION NEAR THE P/I INTERFACE REGION ON DOS PROFILE IN a-Si:H P-I-N SOLAR CELLS, Chen-Nan Yeh, University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC; Qi Wang, National Renewable Energy Laboratory, Golden, CO; and Da-Xing Han, University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC.

SESSION A7: MICROCRYSTALLINE SILICON I
Chair: Norbert Nickel
Wednesday Morning, April 10
Golden Gate C2

RELATED SYMPOSIUM J: THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS

8:30 A.M. *A7.1
ON THE WAY TOWARDS HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS BY THE "MICROMORPH" CONCEPT, J. Meier, S. Dubail, U. Kroll, P. Torres, J.A. Anna Selvan, D. Fischer, H. Keppner, A. Shah, Université de Neuchâtel, Institut de Microtechnique, Neuchâtel, Switzerland.

9:00 A.M. A7.2
DEPOSITION OF NANOCRYSTALLINE SILICON FILMS (nc-Si:H) IN AN ECWR PLASMA OF PURE SiH4 , Bernd Schroeder, Michael Scheib and Hans Oechsner, University Kaiserslautern, Department of Physics, Kaiserslautern, Germany.

9:15 A.M. A7.3
GROWTH OF PHOTOCONDUCTIVE POLYCRYSTALLINE Si FILMS DIRECTLY ON GLASS AT HIGH DEPOSITION RATE, A.R. Middya, J. Guillet, J. Perrin and J.E. Bouree, LPICM, Ecole Polytechnique, Palaiseau, France.

9:30 A.M. A7.4
THE EFFECT OF HYDROGEN DILUTION ON THE HOT-WIRE DEPOSITION OF MICRO-CRYSTALLINE SILICON, H.N. Wanka, R. Zedlitz, M. Heintze and M.B. Schubert, Universität Stuttgart, Institut für Physikalische Electronik, Stuttgart, Germany.

9:45 A.M. A7.5
¹H NMR IN uc-Si:H DEPOSITED WITH DIFFERENT PLASMA EXCITATION FREQUENCIES AND SILANE CONCENTRATIONS, P. Craig Taylor, Parameswar Hari, University of Utah, Department of Physics, Salt Lake City, UT; and F. Finger, Institute für Schict-und Ionentechnik, Forschungszentrum Jülich, Jülich, Germany.

10:00 A.M. BREAK

SESSION A8: SOLAR CELLS
Chair: Ruud Schropp

10:30 A.M. A8.1
ADVANCED IN THE CHARACTERIZATION OF AMORPHOUS SEMICONDUCTOR SOLAR CELLS BY REAL TIME SPECTYROELLIPSOMETRY, R.W. Collins, Sangbo Kim, Pennsylvania State University, Department of Physics, University Park, PA; Joohyun Koh, J.S. Burnham, Ing-Shin Chen, Pennsylvania State University, Materials Research Laboratory, University Park, PA; and C.R. Wronski, Pennsylvania State University, Department of Physics and Electrical Engineering, University Park, PA.

10:45 A.M. A8.2
ANALYTICAL MODEL OF a-Si/c-Si HIT SOLAR CELL, Joze Furlan, Pavle Popovic, Franc Smole, University of Ljubljana, Faculty of Electrical and Computer Engineering, Ljubljana, Slovenia.

11:00 A.M. A8.3
MATERIAL BASIS OF HIGHLY STABLE a-Si:H SOLAR CELLS, Bernd Rech, Claus Beneking, Stephan Wieder, Frank Siebke and Heribert Wagner, ISI-PV, Forschungszentrum Jülich, Jülich, Germany.

11:15 A.M. A8.4
PROPERTIES OF LOW H CONTENT AMORPHOUS SILICON P-I-N DEVICES PREPARED USING ECR DEPOSITION, Sanjeev Kaushal, Vikram Dalal and Robert Girvan, Iowa State University, Department of Electrical and Computer Engineering, Ames, IA.

11:30 A.M. A8.5
ELECTROABSORPTION MEASUREMENTS ON THE p⁺ LAYER IN a-Si:H PIN SOLAR CELLS, Lin Jiang and E.A. Schiff, Syracuse University, Department of Physics, Syracuse, NY.

11:45 A.M. A8.6
LIGHT-INDUCED DEGRADATION OF AMORPHOUS SILICON-GERMANIUM ALLOY SOLAR CELLS DEPOSITED AT HIGH RATES, S. Sugiyama, X. Yu, J. Yang and S. Guha, United Solar Systems Corporation, Troy, MI.

SESSION A9: MICROCRYSTALLINE SILICON II
Chair: Johannes Meierl
Wednesday Afternoon, April 10
Golden Gate C2
1:30 P.M. A9.1
THIN P-TYPE MICROCRYSTALLINE SILICON FILM ON VARIOUS SUBSTRATES, J.K. Rath, J. Wallinga and R.E.I. Schropp, Debye Institute, Utrecht University, Department of Atomic and Interface Physics, Utrecht, Netherlands.

1:45 P.M. A9.2
HIGHLY CONDUCTIVE P-TYPE MICROCRYSTALLINE SILICON THIN FILMS, M. Heintze and M. Schmitt, Universität Stuttgart, Institut für Physikalische Eleltronik, Stuttgart, Germany.

2:00 P.M. A9.3
LOW TEMPERATURE HYDROGEN INDUCED AMORPHOUS TO CRYSTALLINE SILICON PHASE TRANSFORMATIONS, C.M. Fortmann, State University of New York at Stony Brook, Department of Applied Mathematics and Statistics, Stony Brook, NY; P. Hapke and Friedhelm Finger, Institut für Schicht-und Ionentechnik Forschungszentrum, Jülich, Germany.

2:15 P.M. A9.4
TRAP DOMINATED HYDROGEN TRANSPORT IN DISORDERED SILICON, N.H. Nickel, W.B. Jackson and J. Walker, Xerox Palo Alto Research Center, Palo Alto, CA.

2:30 P.M. A9.5
MODULATED HALL-EFFECT TECHNIQUES FOR THE STUDY OF TRANSPORT PROPERTIES OF MICROCRYSTALLINE SILICON WITH DIFFERENT GRAIN SIZES, P. Hapke, R. Carius, F. Finger, U. Backhausen, ISI-PV, Forschungszentrum Jülich, Jülich, Germany; and S. Ray, IACS, Calcutta, India.

2:45 P.M. A9.6
THE INCREASED RESPONSE TIME IN HYDROGENATED MICROCRSTALLINE SILICON - A FERMI LEVEL EFFECT OR A STRUCTURAL EFFECT IN A GRAINY MATERIAL, S. Grebner, Technical University Munich, Physics Department, Garching, Germany; P. Popovic, Ljubljana University, Faculty of Electrical Engineering, Ljubljana, Slovenia; Qing Gu, Syracuse University, Physics Department, Syracuse, NY; and R. Schwarz, Technical University Munich, Physics Department, Garching, Germany.

3:00 P.M. BREAK

SESSION A10: HYDROGEN
Chair: Howard Branz

3:30 P.M. *A10.1
NUCLEAR MAGNETIC RESONANCE STUDIES OF HYDROGEN IN AMORPHOUS SILICON, R.E. Norberg, P.A. Fedders and D.J. Leopold, Washington University, Department of Physics, St. Louis, MO.

4:00 P.M. A10.2
HYDROGEN DISTRIBUTION IN HIGH STABILITY a-Si:H PREPARED BY THE HOT WIRE TECHNIQUE, J. Todd Stephen, Daxing Han, University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC; Hav Mahan, National Renewable Energy Laboratory, Golden, CO; and Yue Wu, University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC.

4:15 P.M. A10.3
NEW MODEL FOR "STRETCHED EXPONENTIAL" RELAXATION, Chris G. Van de Walle, Xerox PARC, Palo Alto, CA.

4:30 P.M. A10.4
HYDROGEN DIFFUSION KINETICS VS HYDROGEN CONCENTRATION IN HYDROGENATED A MORPHOUS SILICON, Y.H. Liang and J.R. Abelson, University of Illinois, Coordinated Science Laboratory and the Department of Materials Science and Engineering, Urbana, IL.

4:45 P.M. A10.5
HYDROGEN ENERGETICS AND TRANSPORT KINETICS IN AMORPHOUS SILICON HYDRIDE, A.J. Franz and J.L. Gland, University of Michigan, Department of Chemical Engineering, Ann Arbor, MI.

SESSION A11: DEFECTS I
Chair: Peter Fedders
Thursday Morning, April 11
Golden Gate C2

8:30 A.M. *A11.1
PHOTOCREATED DEFECTS AND LIGHT-INDUCED IN a-Si:H AND RELATED ALLOY FILMS, Tatsuo Shimizu, Rudolf Durny and Minoru Kumeda, Kanazawa University, Faculty of Engineering, Kanazawa, Japan.

9:00 A.M. A11.2
TELEGRAPH NOISE AS A PROBE OF DEFECTS IN THIN FILM TRANSISTORS, Lisa M. Lust, Georgia Institute of Technology, Signature Technology Laboratory, Atlanta, GA; T-J. King, I-W. Wu and Warren B. Jackson, Xerox Palo Alto Research Center, Palo Alto, CA.

9:15 A.M. A11.3
PULSED ESR STUDY OF LIGHT-INDUCED METASTABLE DEFECTS IN ¹⁷O AND ¹³C INCORPORATED a-Si:H, Satoshi Yamasaki, Takahid Umeda, Junich Isoya, Akihisa Matsuda and Kazunobu Tanaka, JRCAT-NAIR, Ibaraki, Japan.

9:30 A.M. A11.4
THE DENSITY-OF-STATES CONCEPT VERSUS THE EXPERIMENTALLY DETERMINED DISTRIBUTION OF ACTIVATION ENERGIES, Guy Adriaenssens and Vladimir Arkhipov, K.U. Leuven, Semiconductor Physics, Heverlee-Leuven, Belgium.

9:45 A.M. A11.5
LIGHT-BIAS CPM STUDY OF THE DENSITY OF STATES IN N-TYPE HYDROGENATED AMORPHOUS SILICON, T. Unold and H.M. Branz, NREL, Academy of Sciences of the Czech Republic, Institute of Physics, Golden, CO.

10:00 A.M. BREAK

SESSION A12: DEFECTS II
Chair: Tatsuo Shimizu

10:30 A.M. A12.1
HYDROGEN DENSITY OF STATES AND DEFECT DENSITIES IN a-Si:H AND ITS ALLOYS, J. Roberston, Cambridge University, Engineering Department, Cambridge, United Kingdom; M.J. Powell and S.C. Deane, Philips Research Laboratory, Surrey, United Kingdom.

10:45 A.M. A12.2
DEFECT EQUILIBRATION IN AMORPHOUS SILICON FILMS SUBMITTED TO HIGH INTENSITY ILLUMINATION, C. Godet and P. Roca I. Cabarrocas, Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau, France.

11:00 A.M. A12.3
BONDING DEFECTS IN HYDROGENATED AMORPHOUS SILICON ALLOYS, G. Lucovsky, North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, Raleigh, NC.

11:15 A.M. A12.4
RECOVERY KINETICS OF PHOSPHORUS ION IMPLANTED, J. Nakata, Kinki University, Osaka, Japan; H. Gleskova, S. Wagner, Princeton University, Princeton, NJ; P.A. Stolk, Philips Research, Eindhoven, Netherlands; and J.M. Poate, AT&T Bell Laboratories, Murray Hill, NJ.

11:30 A.M. A12.5
METASTABLE DEFECTS IN a-Si:H FROM BOND-LENGTH DISORDER, Qiming Li and R. Biswas, Iowa State University, Department of Physics and Astronomy and Microelectrionics Research Center, Ames, IA.

11:45 A.M. A12.6
MOLECULAR DYNAMICS STUDIES OF LOCAL AND EXTENDED MIGRATION OF H AND DEFECTS IN a-Si:H, P.A. Fedders, Washington University, Department of Physics, St. Louis, MO.


SESSION A13: INTERFACES
Chair: Robert Collins
Thursday Afternoon, April 11
Golden Gate C2

1:30 P.M. *A13.1
LASER INTERFERENCE STRUCTURING OF a-Si:H, C.E. Nebel, Walter Schottky Institut, Technische Universität-München, Garching, Germany.

2:00 P.M. A13.2
INVESTIGATION OF QUANTUM CONFINEMENT IN THIN MONOLAYER a-Si:H FILMS, S. Koehler, H. Fritzsche, University of Chicago, James Franck Institute, Chicago, IL.

2:15 P.M. A13.3
ELECTRONIC AND CHEMICAL PROPERTIES OF a-Si:H INTERFACE LAYERS, J. Knobloch and P. Hess, University of Heidelberg, Institute of Physical Chemistry, Heidelberg, Germany.

2:30 P.M. A13.4
IN-SITU KELVIN PROBE ANALYSIS OF THE P⁺/777I INTERFACE POTENTIAL, A. Nuruddin and J.R. Abelson, University of Illinois, Coordinated Science Laboratory and the Department of Materials Science and Engineering, Urbana, IL.

2:45 P.M. A13.5
CAPACITANCE CHARACTERIZATION OF AMORPHOUS SILICON/AMORPHOUS SILICON GERMANIUM HETEROSTRUCTURES, C. Palsule, J.D. Cohen, U. Paschen, University of Oregon, Department of Physics, Eugene, OR; J. Yang and S. Guha, United Solar Systems Corporation, Troy, MI.

3:00 P.M. A13.6
STUDY OF FIELD COLLAPSE IN a-Si:H SOLAR CELLS, Qi Wang, Yueqin Xu and Richard S. Crandall, National Renewable Energy Laboratory, Golden, CO.

3:15 P.M. BREAK

SESSION A14: GROWTH AND DEFECTS
Chair: Akihisa Matsuda

3:45 P.M. A14.1
IMPROVEMENT IN a-Si:H PROPERTIES BY INERT GAS PLASMA TREATMENT, E. Maruyama, Y. Hishikawa, M. Tanaka and S. Tsuda, New Materials Research Center, Sanyo Electric Corporation, Ltd., Osaka, Japan.

4:00 P.M. A14.2
METASTABILITY & MICROSTRUCTURE OF a-Si:H FILMS GROWN AT VERY HIGH FREQUENCIES, S. Chattopadhyay, Bruce Dunnett and R.A.G. Gibson, University of Dundee, Amorphous Materials Research Group, APEME, Dundee, United Kingdom.

4:15 P.M. A14.3
WIDE-GAP a-Si:H FABRICATED BY CONTROLLING VOIDS, K. Yoshino, W. Futako, Y. Wasai and I. Shimizu, Tokyo Institute of Technology, The Graduate School, Yokohama, Japan,

4:30 P.M. A14.4
IN-SITU INVESTIGATION OF THE a-Si:H/c-Si INTERFACE, H. Feist, C. Swiatkowski, J.R. Elmiger and M. Kunst, Hahn-Meitner-Institut, Department Solare Energetik, Berlin, Germany.

4:45 P.M. A14.5
LIGHT INDUCED CHANGES OF Si-H BONDING MODE IN HIGH-RATE a-Si:H FILMS, Xuanying Lin, Kuixum Lin, Hong Wang, Yunpen Yu, Shantou University, Department of Physics, Guangdong, China.


SESSION A15: POSTER SESSION
DEFECTS, GROWTH AND STRUCTURE
Chair: Sigurd Wagner
Thursday Evening, April 11
8:00 P.M.
Presidio Ballroom

A15.1 DEFECT FORMATION DURING DEPOSITION OF UNDOPED a-Si:H BY PECVD, Keiji Maeda and Ikurou Umezu, Science University of Tokyo, Department of Material Science and Technology, Tokyo, Japan.

A15.2 OBSERVATION OF CONFIGURATIONAL SWITCHING OF DEEP DEFECTS IN a-Si:H USING THERMAL STEP INSERTION WITH CAPACITANCE TRANSIENT MEASUREMENTS, Adam D. Gardner and J. David Cohen, University of Oregon, Department of Physics, Eugene, OR.

A15.3 NONLINEAR DEPENDENCE OF ueeON SUBGAP ABSORPTION IN PULSE AND CW LIGHT-SOAKED a-Si:H, Nobuhiro Hata, Toru Ikeda and Akihisa Matsuda, Electrotechnical Laboratory, Ibaraki, Japan.

A15.4 PLDMR AND PADMR STUDIES OF UNDOPED a-Si:H, P. Craig Taylor, Niko Schultz and Zeev V. Vardeny, University of Utah, Salt Lake City, UT.

A15.5 CPM AND PDS-A CRITICAL INTERPRETATION OF EXPERIMENTAL RESULTS, Helmur Snebig, Frank Siebke and Reinhard Carius, Forschungszentrum Jülich, ISI-PN, Jülich, Germany.

A15.6 FEATURES OF INFRARED REFLECTIVITY SPECTRA OF THE BORON-DOPED LAYERS OF AMORPHOUS SILICON, I.A. Kurova, L.I. Belogorokjova, Moscow State University, Physics Department, Moscow, Russia; and A.I. Belogorokhov, Institute of Rare Metals, Moscow, Russia.

A15.7 PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS SILICON ALLOYED WITH SULFUR, P. Craig Taylor, Shenlin Chen, John M. Viner, University of Utah, Department of Physics, Salt Lake City, UT; and Shulin Wang, Applied Materials, Santa Clara, CA.

A15.8 DEPENDENCE OF LIGHT-INDUCED ESR ON NITROGEN CONTENT IN AMORPHOUS SILICON-NITROGEN ALLOYS, Jinyan Zhang, T. Ohtsuka, M. Kumeda and T. Shimizu, Kanazawa University, Faculty of Engineering, Kanazawa, Japan.

A15.9 IDENTIFICATION OF DOMINANT ELECTRON DEEP TRAP OBSERVED IN MODULATED PHOTOCURRENT MEASUREMENTS OF HYDROGENATE AMORPHOUS SILICON, Daewon Kwon and J. David Cohen, University of Oregon, Department of Physics, Eugene, OR.

A15.10 EFFECTS OF LIGHT INDUCED DEGRADATION ON THE DISTRIBUTION OF DEEP DEFECTS IN a-Si, Ge:H, Chih-Chiang Chen, University of Oregon, Department of Physics, Eugene, OR; Fan Zhong, Lawrence Berkeley Laboratory, Physics Division, Berkeley, CA; and J. David Cohen, University of Oregon, Department of Physics, Eugene, OR.

A15.11 THE ELECTRONIC PROPERTIES OF a-Si:H DEPOSITED WITH HYDROGEN OF HELIUM DILUTION, F. Zhong, W.S. Hong, V. Perez-Mendez, Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA; C.C. Chen and J.D. Cohen, University of Oregon, Department of Physics, Eugene, OR.

A15.12 FABRICATION AND PROPERTIES OF LOW H-CONTENT a-Si:H by LIMITED SOURCE DIFFUSION, Y.H. Liang and J.R. Abelson, University of Illinois, Coordinated Science Laboratory and the Department of Materials Science and Engineering, Urbana, IL.

A15.13 ION ENERGY DISTRIBUTIONS IN SILANE-HYDROGEN PLASMAS, E.A.G. Hamers, W.G.J.H.M. van Sark, J. Bezemer, W.F. van der Weg, Utrecht University, Debye Institute, Utrecht, Netherlands; and W.J. Goedhber, FOM Institut voor Plasmapysica "Rynhuzen", Nieuwegein, Netherlands.

A15.14 HIGH-RATE RPECVD DEPOSITION OF a-Si:H FILMS BY MEANS OF A VHF RESONANT PLASMA SOURCE, T. Blum, G. Suchaneck, J. Kuske, U. Stephan, Dresden University of Technology, IHM, Dresden, Germany; W. Beyer and A. Kottwwitz, Forschungszentrum Jülich, Jülich, Germany.

A15.15 SADDLE-FIELD DEPOSITION OF AMORPHOUS SEMICONDUCTORS, F. Gaspari, V. Vorobyov, L.S. Sidhu, S.K. O'Leary and S. Zukotynski, University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada.

A15.16 DEFECT CHARACTERIZATION OF HIGH-RATE DEPOSITED HYDROGENATED AMORPHOUS SILICON FILMS, Florence Y.M. Chan, Y.M. Lam, Y.C. Chan, S.H. Lin, City University of Hong Kong, Department of Electronic Engineering, Hong Kong; X.Y. Lin, Shantou University, Department of Physics, Shantou, China; W.S. Lau and S.J. Chua, National University of Singapore, Department of Electrical Engineering, Singapore.

A15.17 AMORPHOUS SILICON-CARBON ALLOYS DEPOSITED BY ELECTRON-CYCLOTRON RESONANCE PECVD, V. Chu, Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal; and J.P. Conde, Instituto Superior Técnico, Department of Physics, Portugal.

A15.18 FILTERED CATHODIC VACUUM ARC (FCVA) DEPOSITION OF THIN FILM SILICON, M.M.M. Bilek and W.I. Milne, University of Cambridge, Department of Engineering, Cambridge, United Kingdom.

A15.19 INTERMEDIATE LAYERS IN THE a-Si:H GROWTH PROCESS, Arcady Aivazov. Nicolay Bodyagin, Moscow The Institute of Electronic Engineering, Department of Faculty of MT, Moscow, Russia; and Sergey Vikhrov, Ryazan Radiotechnical Academy, Department of Faculty of CR, Ryazan, Russia.

A15.20 LIGHT-INDUCED STABILITY OF LAYERED AMORPHOUS HYDROGENATED SILICON GROWN IN ALTERNATIVELY CHANGING THE SUBSTRATE TEMPERATURE, Jong-Hwan Yoon and Czang-Ho Lee, College of Natural Science, Department of Physics, Kangwon-do, Korea.

A15.21 MECHANICAL AND ELECTRICAL PROPERTIES OF HYDROGEN OR HELIUM DILUTED A-SI:H PREPARED AT LOW (<150deg.C) TEMPERATURES, W.S. Hong, F. Zhong and V. Perez-Mendez, Lawrence Berkeley Laboratory, Physics Division, Berkeley, PA.

A15.22 TRANSPORT PROPERTIES OF COMPENSATED uc-Si:H, N. Wyrsch, M. Goerlitzer, N. Beck, J. Meier and A. Shah, University of Neuchâtel, IMT, Neuchâtel, Switzerland.

A15.23 LIGHT-INDUCED EFFECTS ON a-Si:H;F FILMS, H.S. Choi, K.H. Jang and M.K. Han, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

A15.24 EFFECTS OF LASER ANNEALING ON THE FURNACE ANNEALED AMORPHOUS SILICON THIN FILMS, K.Y. Choi, J.H. Jeon, Y.S. Kim and M.K. Han, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

A15.25 EVIDENCE FOR A PLATE-LIKE NANOSTRUCTURE OF HYROGENATED SILICON, Martin Albrecht, Saule Aldabergenova, Horst Strunk, Dirk Stenkamp, Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Mikrocharakterisierung, Erlangen, Germany; Kambar Tauasarov, Toktar Taurbaev, Al-Farabi Kazakh State University, Physical Department, Almaty, Kazakhstan; Arkadi Andreev, A.F. Ioffe Physical-Technical Institute, Amorphous Semiconductors, St. Petersburg and Burkhart Dietrich, Institut für Halbleiterphysik, Frankfurt, Germany.

A15.26 RECRYSTALLISATION OF PREAMORPHIZED SILICON INVESTIGATED BY RBS AND THE PAC METHOD, Reiner Vianden, Guido Rohrlack, Universität Bonn, Institut für Strahlen-und Kernphysik, Bonn, Germany; Russell Gwilliam, Brian J. Sealy, Zaeem Jafri, University of Surrey, Electronic and Electrical Engineering, Guildford, United Kingdom.

A15.27 THE EFFECTS OF DEPOSITION POWER AND TEMPERATURE ON THE PROPERTIES OF HEAVILY DOPED MICROCRYSTALLINE SILICON FILMS, Amir M. Miri and Savvas G. Chamberlain, University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Canada.

A15.28 CORRELATION BETWEEN COMPOSITIONAL AND ELECTRICAL PROPERTIES OF uc-Si:C:O:H DOPED FILMS, R. Martins, I. Ferreira, R. Nuncs, A. Bicho and E. Fortunato, FCT-UNL and UNINOVA, Caparica, Portugal.

A15.29 OPTICAL ABSORPTION IN AMORPHOUS SILICON, S.K. O'Leary, L.S. Sidhu, S. Zukotynski and J.M. Perz, University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada.

A15.30 AMORPHOUS SILICON PRODUCED IN ULTRA-FINE MACHINING OF WAFERS, Lawrence Whitmore, Ian Hutchings, University of Cambridge, Department of Material Science, Cambridge, United Kingdom; Keith Puttick, University of Surrey, Guildford, United Kingdom; and Anthony Gee, Cranfield University, SIMS, Cranfield, United Kingdom.

A15.31 DOMINANT MONOHYDRIDE BOUNDING IN PLASMA CVD a-Si:H FILMS FORMED AT ROOM TEMPERATURE, E. Srinivasan, D.A. Lloyd and G.N. Parson, North Carolina State University, Department of Chemical Engineering, Raleigh, NC.

A15.32 CALORIMETRIC INVESTIGATION OF RELAXATION PROCESSES IN DISORDERED SEMICONDUCTORS, B.G. Budaguan, A.A. Aivazov and A.Yu. Sazonov, Moscow Institute of Electronic Technology, Microtechnology Department, Moscow, Russia.

A15.33 SPECTROSCOPIC EVIDENCE FOR NEAR-NEIGHBOR BONDED-H(D) IN a-Si:N:H(D) THIN FILMS, G. Lucovsky, P. Santos-Filho and A. Banerjee, North Carolina State University, Departments of Physics Materials Science and Engineering, and Electircal and Computer Engineering, Raleigh, NC.

A15.34 THE POTENTIAL WAVELENGTH MODULATED LUMINESCENCE AND LUMINESCENCE MECHANISM OF POROUS SILICON, Shengmin Cai, Jingjian Li, Rongqiu Wang, Yong Chen, Zhongfan Liu, Peking University, College of Chemistry, Electrophotonic Intelligent Materials Research Center, Beijing, China; and Shuling Zhang, Peking University, Department of Physics, Beijing, China.

A15.35 LOW TEMPERATURE PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS SILICON, L.S. Sidhu, S.K. O'Leary, F. Gaspari and S. Zukotynski, University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada.

A15.36 ROOM-TEMPERATURE PHOTO- AND ELECTROLUMINESCIENCE OF AMORPHOUS SILICON DOPED BY ERBIUM, E.I. Terukov, M.S. Bresler, O.B. Gusev, V.Kh. Kudoyarova, A.N. Kuznetsov, P.E. Pak, I.N. Yassievich, B.P. Zakharchenya, Ioffe Physico-Technical Institute, St. Petersburg, Russia; W. Fuhs, A. Sturm, Phillips Universität, Fachbereich Physik, Marburg, Germany.

A15.37 CHARACTERIZATION OF THE VISIBLE PHOTOLUMINESCENCE FROM ANODIZED POROUS a-Si:H AND a-Si:C:H THIN FILMS, Michael J. Estes, Lee R. Hirsch, Skip Wichart and Garret Moddel, University of Colorado, Department of Electrical Engineering, Boulder, CO.

A15.38 TIME RESOLVED PHOTOLUMINESCENCE IN a-Si1-xCx:H, Leandro R. Tessler and Lucicleide R. Cirino, Instituto de Fmsica "Gleb Wata, UNICAMP, Campinas, Brazil.


SESSION A16: ELECTRONIC TRANSPORT
Chair: Christoph Nebel
Friday Morning, April 12
Golden Gate C2

8:30 A.M. A16.1
TEMPERATURE DEPENDENCE OF THE PHOTOCONDUCTIVITY OF a-SixGe1-x:H, H. Fritzsche, P. Stradins and G. Belomoin, University of Chicago, James Franck Institute, Chicago, IL.

8:45 A.M. A16.2
ORIGIN OF THE DIFFERENCE IN CONDUCTIVITY AND THERMOPOWER ACTIVATION ENERGIES IN AMORPHOUS SILICON, H. Dyalsingh and J. Kakalios, The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN.

9:00 A.M. A16.3
INTERDIFFUSION AND CARRIER RECOMBINATION IN HIGH INTENSITY TRANSIENT GRATINGS, R. Schwarz, S. Grebner, Technical University of Munich, Physics Department, Garching, Germany; C. Nebel, M. Lanz and M. Stutzmann, Technical University of Munich, Physics Department, Garching, Germany.

9:15 A.M. A16.4
COMPARISON OF EXPERIMENT AND THEORY OF THE PHOTOCONDUCTIVITY OF a-Si:H UP TO A GENERATION RATE OF 10²⁸cm^-3s^-1, P. Stradins and H. Fritzsche, University of Chicago, James Franck Institute, Chicago, IL; P. Tzanetakis and N. Kopidakis, FORTH, Institute of Electrical Structure and Laser, Heraklion, Greece.

9:30 A.M. A16.5
DEPARTMENT OF THE DENSITY OF STATES IN a-SiCaH FROM TRANSIENT PHOTOCONDUCTIVITY, D.P. Webb, University of Abertay, Department of Electrical Engineering, Dundee, Scotland; R. Brüggemann, CvO-Universität, FB Physik, Oldenberg, Germany; and C. Main, University of Abertay, Department of Electrical Engineering, Dundee, Scotland.

9:45 A.M. A16.6
DRIFT MOBILITY MEASUREMENTS IN POROUS SILICON, L. Tsybeskov, C. Peng, P.M. Fauchet, University of Rochester, Department of Electrical Engineering, Rochester, NY.

10:00 A.M. BREAK

SESSION A17: DEFECTS AND RELAXATION
Chair: Hellmut Fritzsche

10:30 A.M. A17.1
THREE COLOR DETECTION IN THE CHARGE INTREGATION REGIME BY STCD FOR LARGE AREA APPLICATIONS, F. Irrera, F. Lemmi and F. Palma, Università 'La Sapicnza, Dipartimento de Ingegneria Elettronica, Roma, Italy.

10:45 A.M. A17.2
a-Si:H PHOTO DIODE WITH VARIABLE SPECTRAL SENSITIVITY, Peter Rieve, Jürgen Giehl and Markus Böhm, Universität-GH Siegen, Institut für Halbleiterelektronik, Siegen, Germany.

11:00 A.M. A17.3
A NEW TYPE OF CYLINDRICAL a-Si:H X-RAY DETECTOR, D. Link, H. Keppner, P. Chabloz, A. Shah, Université de Neuchâtel, Laboratoire commun de Microtechnique, Neuchâtel, Switzerland; and J.F. Germond, J.-M. Haefliger, Hôpital communal, La Chaux-de Fonds, Switzerland; J. Pochon and G. Frosio, Ecole d'Ingénieurs du Canton de Neuchâtel, Le Locle, Switzerland.

11:15 A.M. A17.4
LOCAL STRUCTURAL CHANGES AROUND CHARGED DANGLING BONDS, Rana Biswas, Qiming Li, Iowa State University, Department of Physics, Ames, IA.

11:30 A.M. A17.5
ANOMALOUS EMISSION TRANSIENTS IN a-Si:H, Richard S. Crandall, Klaus Lips, Martin Carlen and Thomas Unold, National Renewable Energy Laboratory, Colden, CO.

11:45 A.M. A17.6
NEW EVIDENCE FOR DEEP DEFECT RELAXATION PROCESSES IN a-Si:H FROM TRANSIENT AND STEADY-STATE JUNCTION CAPACITANCE METHODS, J. David Cohen, Daewon Kwon and Adam D. Gardner, University of Oregon, Department of Physics, Eugene, OR.


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