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2014 MRS Spring Meeting Logo2014 MRS Spring Meeting & Exhibit

April 21-25, 2014 | San Francisco
Meeting Chairs: Jose A. Garrido, Sergei V. Kalinin, Edson R. Leite, David Parrillo, Molly Stevens


Symposium HH : Phase-Change Materials for Memory, Reconfigurable Electronics and Cognitive Applications

2014-04-22   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Huai-Yu Cheng, Macronix International Co., Ltd.
Dong-Ho Ahn, Samsung Electronics
Martin Salinga, RWTH Aachen University
HH2: Structural Dynamics
Session Chairs
Raffaella Calarco
Bart Kooi
Tuesday PM, April 22, 2014
Moscone West, Level 3, Room 3005

2:30 AM - *HH2.01
Short Pulse Laser Induced Switching of Phase Change Materials

Klaus Sokolowski-Tinten 1

1University of Duisburg-Essen Duisburg Germany

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3:00 AM - HH2.02
Ultrafast Terahertz Field Driven Response of Phase Change Materials

Michael Shu 1 Frank Chen 2 Peter Zalden 3 Matthias Hoffmann 4 Aaron Lindenberg 3 4

1Stanford University Stanford USA2Stanford University Stanford USA3Stanford University Stanford USA4SLAC National Accelerator Laboratory Menlo Park USA

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3:15 AM - *HH2.03
Ultrafast Snapshots of Phonons in Motion: Free Electron Laser Probing of Ultrafast Laser Induced Atomic Rearrangements in Ge2Sb2Te5

Paul Fons 1 2 Kirill Mitrofanov 1 Alexander V. Kolobov 1 Roman Shayduk 5 Kotoro Makino 1 Junji Tominaga 1 Raffaella Calarco 3 Alessandro Giussani 3 Peter Rodenbach 3 Henning Richert 4 Muneaki Hase 6

1Nat. Inst. of Adv. Ind. Sci. amp; Tech. Tsukuba Japan2Japan Synchrotron Radiation Research Institute (JASRI) Koto-machi Japan3Paul Drude Institute Berlin Germany4Paul Drude Institute Berlin Germany5Helmholtz-Zentrum Berlin famp;#252;r Materialien und Energie Berlin Germany6Tsukuba University Tsukuba Japan

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3:45 AM - HH2
BREAK

4:15 AM - HH2.04
Promises and Challenges of Ge2Sb2Te5 Sub-Picosecond Resolution Structural Dynamics Probed Using the SACLA Free Electron Laser

Kirill Mitrofanov 1 Paul James Fons 1 2 Alexander Vladimirovich Kolobov 1 2 Junji Tominaga 1 Alessandro Guissani 3 Karthick Perumal 3 Raffaella Calarco 3 Henning Richert 3 Roman Shayduk 4 Kotaro Makino 1 Muneaki Hase 5

1AIST Tsukuba Japan2SPring-8, Japan Synchrotron Radiation Institute (JASRI) Sayo-gun Japan3Paul Drude Institute Berlin Germany4Helmholtz-Zentrum Berlin famp;#252;r Materialien und Energie Berlin-Brandenburg Germany5University of Tsukuba Tsukuba Japan

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4:30 AM - *HH2.05
The Role of Disorder on Electronic and Structural Phase Transitions in Phase Change Materials

Ritesh Agarwal 1

1University of Pennsylvania Philadelphia USA

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5:00 AM - *HH2.06
Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Materials

Sung-Wook Nam 1 Ju Li 2 Ritesh Agarwal 1

1University of Pennsylvania Philadelphia USA2Massachusetts Institute of Technology Cambridge USA

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5:30 AM - HH2.07
Switching Studies on Ion-Irradiated Crystalline Nanowire Phase-Change Memory: Improving the Power-Efficiency of Defect-Templated Amorphization Strategy

Pavan Nukala 1 Zhengqing John Qi 2 Charlie Johnson 2 1 Ritesh Agarwal 1

1University of Pennsylvania Philadelphia USA2University of Pennsylvanial Philadelphia USA

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5:45 AM - HH2.08
Modeling of Phase Change Memory Devices Using a Dynamic Crystal Density Approach

Zachary Woods 1 Ali Gokirmak 1

1University of Connecticut Storrs USA

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HH1: Crystallization Kinetics
Session Chairs
Martin Salinga
Marco Bernasconi
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3005

9:30 AM - *HH1.01
Density Functional Simulations of the Recrystallization of Ge2Sb2Te5: Further Insight on the Crystallite Growth and Memory Effect

Jaakko Akola 1 2 3 Janne Kalikka 1 4 Robert O. Jones 3

1Tampere University of Technology Tampere Finland2Aalto University Helsinki Finland3Forschungszentrum Juelich Juelich Germany4University of Jyvaskyla Jyvaskyla Finland

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10:00 AM - *HH1.02
First-Principles Simulations of Crystallization of AIST and Sb2Te

Riccardo Mazzarello 1 2 Wei Zhang 1 Ider Ronneberger 1 Peter Zalden 3 4 Martin Salinga 3 Matthias Wuttig 2 3

1RWTH Aachen Aachen Germany2RWTH Aachen Aachen Germany3RWTH Aachen Aachen Germany4Stanford University Stanford USA

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10:30 AM - HH1
BREAK

11:00 AM - *HH1.03
Dynamical Heterogeneity of Supercooled Liquid GeTe

Gabriele Cesare Sosso 1 2 Jader Colombo 3 Emanuela Del Gado 3 Jamp;#246;rg Behler 4 Marco Bernasconi 5 Michele Parrinello 1 2

1ETH Zurich Switzerland2Universita' della Svizzera Italiana Lugano Switzerland3ETH Zurich Switzerland4Ruhr-Universitamp;#228;t Bochum Germany5Universita' di Milano-Bicocca Milan Italy

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11:30 AM - HH1.04
Molecular Dynamics Simulation of Crystallization in Amorphous GeTe

Xiaoming Yu 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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11:45 AM - HH1.05
Crystallization Dynamics of Amorphous Antimony

Matti Ropo 1 2 Jaakko Akola 1 2 3 Robert O. Jones 3

1Tampere University of Technology Tampere Finland2Aalto University Espoo Finland3Forschungszentrum Jamp;#252;lich Jamp;#252;lich Germany

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12:00 PM - HH1.06
Density Functional Simulations of Ge2Sb2Te5 Recrystallization Under Uniaxial Stress

Janne Kalikka 1 2 Robert Simpson 1 2 Ju Li 1

1Massachusetts Institute of Technology Cambridge USA2Singapore University of Technology and Design Singapore Singapore

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12:15 PM - HH1.07
Pressure-Induced Amorphous Ge2Sb2Te5 Retention Investigated by in situ X-Ray Diffraction

Antonio Massimiliano Mio 1 Matteo Ceppatelli 2 3 Stefania Privitera 1 Giuseppe D'Arrigo 1 Maria Miritello 4 Federico Gorelli 5 3 Mario Santoro 5 3 Roberto Bini 3 6 Emanuele Rimini 1

1IMM-CNR Catania Italy2ICCOM-CNR Sesto Fiorentino (FI) Italy3LENS Sesto Fiorentino (FI) Italy4MATIS-IMM-CNR Sesto Fiorentino (FI) Italy5INO-CNR Sesto Fiorentino (FI) Italy6Universitamp;#224; degli Studi di Firenze Sesto Fiorentino (FI) Italy

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12:30 PM - HH1.08
The Effect of Ta Interface on the Crystallization of Amorphous Phase Change Material Thin Films

Pierre Noe 1 Giada E. Ghezzi 1 Frederic Fillot 1 Jean-Paul Barnes 1 Julien Ferrand 1 Sylvain Maitrejean 1 Franamp;#231;oise Hippert 2

1CEA-LETI Grenoble France2CNRS Grenoble France

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2014-04-23   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Huai-Yu Cheng, Macronix International Co., Ltd.
Dong-Ho Ahn, Samsung Electronics
Martin Salinga, RWTH Aachen University
HH4: GaSb
Session Chairs
Dong-Ho Ahn
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3005

2:30 AM - HH4.01
Stoichiometric GaSb - A Candidate for Fast and Pb-Free Soldering Reflow Complying Phase-Change Memory

Huai-Yu Cheng 1 2 Simone Raoux 1 3 Khanh V. Nguyen 4 Rohit S. Shenoy 4 Matthew BrightSky 1 3

1IBM/Macronix PCRAM Joint Project Yorktown Heights USA2Macronix International Co. Ltd. Hsinchu Taiwan3IBM T. J. Watson Research Center Yorktown Heights USA4IBM Almaden Research Center San Jose USA

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2:45 AM - HH4.02
GaSb-Based Phase Change Alloys as Candidates for Phase Change Memory

Simone Raoux 1 Huai-Yu Cheng 2 Jean Jordan-Sweet 1 Feng Xiong 3 4 Eric Pop 3 Magali Putero 5 6 Vanessa Coulet 5 6 Christophe Muller 5 6 Carsten Baehtz 7

1IBM T. J. Watson Research Center Yorktown Heights USA2Macronix International Co., Ltd.h Center Hsinchu Taiwan3Stanford University Stanford USA4University of Illinois at Urbana-Champaign Champaign USA5Aix-Marseille Universitamp;#233; Marseille France6CNRS, IM2NP - UMR 7334 Marseille France7Helmholtz-Zentrum Dresden-Rossendorf e.V. Dresden Germany

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3:00 AM - HH4.03
Phase Transition in GaSb Alloys: Phase Segregation and Mass Density Change

Magali Putero 1 Marie-Vanessa Coulet 1 Christophe Muller 1 Carsten Baehtz 2 Simone Raoux 3

1Aix Marseille Universitamp;#233; MARSEILLE France2Institute of Ion Beam Physics and Materials Research Dresden Germany3IBM T. J. Watson Research Center Yorktown Heights USA

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3:15 AM - HH4.04
Ab-Initio Molecular-Dynamics Simulations of Ga-Sb Phase-Change Materials

James Dixon 1 Stephen Elliott 1

1University of Cambridge Cambridge United Kingdom

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3:30 AM - HH4
BREAK

HH5: Resistance Drift
Session Chairs
Huai-Yu Cheng
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3005

4:00 AM - *HH5.01
Material Engineering for New Phase Change Memory Applications

Innocenzo Tortorelli 1

1Micron Semiconductor Italy Agrate Brianza (MB) Italy

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4:30 AM - HH5.02
TEM Study of the Low Resistance State in GST Ge Rich and N Doped PRAM Devices

Martin Coue 1 Gabriele Navarro 1 Veronique Sousa 1 Vincent Delaye 1 Luca Perniola 1 Nicolas Bernier 1 Pierre Noe 1 Frederic Fillot 1 Chiara Sabbione 1 Denis Blachier 1 Paola Zuliani 2 Roberto Annunziata 2 Gilles Reimbold 1

1CEA-LETI, Minatec Campus Grenoble France2STMicroelectronics, Technology Ramp;D Agrate Brianza Italy

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4:45 AM - HH5.03
Unified Modeling of Electrically Induced Crystallization in the Filamentary Regime of Phase Change Memory Devices

Nicola Ciocchini 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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5:00 AM - HH5.04
Modeling Microstructural Evolution During Multi-Level Switching in Ge2Sb2Te5 from Electrical Characterization

Gwihyun Kim 1 Sanghyeon Lee 1 Seungwoo Hong 1 Seung Jae Baik 1

1Hankyong National University Anseong-si Republic of Korea

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5:15 AM - *HH5.05
Relaxation in Phase Change Memory Cells

Daniel Krebs 1 Abu Sebastian 1 Federico Zipoli 1

1IBM Research - Zurich Rueschlikon Switzerland

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5:45 AM - HH5.06
High Speed, High Temperature Electrical Characterization of Meta-Stable Phases and Crystallization Dynamics of Ge2Sb2Te5

Faruk Dirisaglik 1 Gokhan Bakan 1 Zoila Jurado 1 Lindsay Sullivan 1 Sadid Muneer 1 Mustafa Akbulut 1 Kadir Cil 1 Yu Zhu 2 Chung Lam 2 Helena Silva 1 Ali Gokirmak 1

1University of Connecticut Storrs USA2IBM Watson Research Center Yorktown Heights USA

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HH6: Poster Session
Session Chairs
Wednesday PM, April 23, 2014
Marriott Marquis, Yerba Buena Level, Salons 8-9

9:00 AM - HH6.01
Simultaneous Seebeck and Electrical Resistivity Characterization of Ge2Sb2Te5 Thin Films

L'Hacene Adnane 1 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA

Show Abstract

9:00 AM - HH6.02
Improvement of Gap-Filling Ability of Sb-Te Thin Film by the Screen Plasma-Enhanced Atomic Vapor Deposition

Jin Hwan Jeong 1 Doo Jin Choi 1

1Yonsei University Seoul City Republic of Korea

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9:00 AM - HH6.03
Mass Transport in as Deposited and Structural Relaxed Amorphous GeTe Thin Films

Federica Cocina 1 Antonio Massimiliano Mio 2 Stefania Privitera 2 Giuseppe D'Arrigo 2 Maria Grazia Grimaldi 1 3 Emanuele Rimini 2

1Universitamp;#224; di Catania Catania Italy2IMM-CNR Catania Italy3MATIS-IMM-CNR Catania Italy

Show Abstract

9:00 AM - HH6.04
Dynamic Crystallization Model for Ge2Sb2Te5 Nanostructures

Adam Cywar 1 Sean Fischer 1 Ali Gokirmak 1

1University of Connecticut Storrs USA

Show Abstract

9:00 AM - HH6.05
Morphological and Electrical Characterization of Non-Standard Composition Chalcogenide Alloys in the Amorphous to Crystal Transition

Giuseppe D'Arrigo 1 Andrea Redaelli 2 Mattia Boniardi 2 Stefania Privitera 1 Antonio Mio 1 Giovanna Pellegrino 1 Emanuele Rimini 1

1CNR Catania Italy2Micron Semiconductor Italia s.r.l. Agrate Brianza Italy

Show Abstract

9:00 AM - HH6.06
Crystallization Kinetics of Sb2S3 Thin Films

Weiling Dong 1 Milos Krbal 2 Xin Yu Chin 3 Behrad Gholipour 3 Cesare Soci 3 Rong Zhao 1 Robert Edward Simpson 1

1Singapore University of Technology and Design Singapore Singapore2University of Pardubice Pardubice Czech Republic3Nanyang Technological University Singapore Singapore

Show Abstract

9:00 AM - HH6.07
Impact of Heater Material on Thermoelectric Heating and Cooling in Phase Change Memory Cells

Azer Faraclas 1 Ali Gokirmak 1 Helena Silva 1 Adam Cywar 1

1University of Connecticut Storrs USA

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9:00 AM - HH6.08
Determination of Specific Contact Resistance of Ge2Sb2Te5 Phase Change Materials by Spacer Etched Nanowires

Ruomeng Huang 1 Kai Sun 1 Kian S. Kiang 1 Ruiqi Chen 1 Yudong Wang 1 C. H. "Kees" de Groot 1

1University of Southampton Southampton United Kingdom

Show Abstract

9:00 AM - HH6.09
Selective Deposition of Phase Change Materials by Chemical Vapor Deposition

Ruomeng Huang 1 Sophie L. Benjamin 2 Chitra Gurnani 2 Andrew L. Hector 2 William Levason 2 Kathryn George 2 Gillian Ried 2 C. H. "Kees" de Groot 1

1University of Southampton Southampton United Kingdom2University of Southampton Southampton United Kingdom

Show Abstract

9:00 AM - HH6.10
Thermal Boundary Resistance and Their Impact of Heat Transfer Simulation in Phase Change Memory

Yin-Hsien Huang 1 Tsung-Eong Hsieh 1

1National Chiao Tung University Hsinchu Taiwan

Show Abstract

9:00 AM - HH6.11
Resistive Switching and Polarity Reversal Phenomena in Ge2Sb2Te5-Based Conductive-Bridge Random Access Memory

Yin-Hsien Huang 1 Hsuan-An Chen 1 Hsin-Han Wu 1 Tsung-Eong Hsieh 1

1National Chiao Tung University Hsinchu Taiwan

Show Abstract

9:00 AM - HH6.12
Crystallization Kinetics of Ge2Sb2Te5 and GeTe Phase Change Materials as a Function of Deposition Temperature

Chee Ying Khoo 1 2 Hai Liu 1 Wardhana Aji Sasangka 3 Riko I Made 3 Nobumichi Tamura 4 Martin Kunz 4 Arief Suriadi Budiman 5 Carl V Thompson 2 3 6 Chee Lip Gan 1 2 3

1Nanyang Technological University Singapore Singapore2Singapore-MIT Alliance Singapore Singapore3Singapore-MIT Alliance for Research and Technology Singapore Singapore4Lawrence Berkeley National Laboratory Berkeley USA5Singapore University of Technology and Design Singapore Singapore6Massachusetts Institute of Technology Cambridge USA

Show Abstract

9:00 AM - HH6.13
Evaluation of Se-Doped GeSb Phase Change Material for Multi-Level PRAM Device Cells

Jeong Hoon Kim 1 Dae-Hong Ko 1 Dae-Seop Byeon 1 Dohyung Kim 2 Jeonghee Park 2 Dongho Ahn 2 Seokwoo Nam 2

1Yonsei University Seoul Republic of Korea2Samsung Electronics Co., Ltd. Hwasung Republic of Korea

Show Abstract

9:00 AM - HH6.14
Facile Electrochemical Synthesis of SbxTey Nanowires and Their Electrical Transport Properties

Jiwon Kim 1 Jae-Hong Lim 2 Yong-ho Choa 3 Nosang V. Myung 1

1University of California, Riverside riverside USA2Korea Institute of Materials Science Changwon Republic of Korea3Hanyang University Ansan Republic of Korea

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9:00 AM - HH6.15
Density Functional Simulations of Phase Change Materials in Graphene Sandwich Structures

Sampo Juhani Kulju 1 Jaakko Akola 1 David Prendergast 2 Robert O. Jones 3

1Tampere University of Technology Tampere Finland2Lawrence Berkeley National Laboratory Berkeley USA3Forschungszentrum Jamp;#252;lich Jamp;#252;lich Germany

Show Abstract

9:00 AM - HH6.16
Ab-Initio Study of the Sub-Threshold Electron Transport Properties of Ultra-Scaled Amorphous Phase Change Material Germanium Telluride

Jie Liu 1 Xu Xu 1 Mp Anantram 1

1University of Washington Seattle USA

Show Abstract

9:00 AM - HH6.17
Multi-Scale Analysis of the Crystallization of Amorphous Germanium Telluride

Jie Liu 1 Xu Xu 1 Lucien Brush 1 Mp Anantram 1

1University of Washington Seattle USA

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9:00 AM - HH6.18
Dielectric Functions and Phonons of Ge1-xSex and Ge1-x-ySexAsy Chalcogenide Glasses

Hyeon Seob So 1 Jun-Woo Park 1 Hosuk Lee 1 Hae-Young Shin 2 Sukhyun Yoon 2 Hyung-Woo Ahn 3 Su-Dong Kim 3 Suyoun Lee 3 Doo-Seok Jeong 3 Byung-ki Cheong 3 Hosun Lee 1

1Kyung Hee University Yongin-si Republic of Korea2Ewha Womans University Seoul Republic of Korea3Korea Institute of Science and Technology Seoul Republic of Korea

Show Abstract

9:00 AM - HH6.19
Effects of Capping Layer on the Structural Volume Change of Ge2Sb2Te5

Susan Su Yi Yeow 1 Qing Liu 1 I Made Riko 1 Chee Ying Khoo 1 Chee Lip Gan 1 Leong Kam Chew 2

1NTU Singapore Singapore2GLOBALFOUNDRIES Singapore Pte Ltd Singapore Singapore

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9:00 AM - HH6.20
Development of an Efficient Scheme for Generating Amorphous Structures

Yong Youn 1 Youngho Kang 1 Seungwu Han 1

1Seoul National University Seoul Republic of Korea

Show Abstract

HH3: Phase-Change Memory
Session Chairs
Huai-Yu Cheng
Dong-Ho Ahn
Wednesday AM, April 23, 2014
Moscone West, Level 3, Room 3005

9:30 AM - *HH3.01
The Evolution of PRAM Technology and Applications

Hongsik Jeong 1

1Samsung Electronics Hwasung-city Republic of Korea

Show Abstract

10:00 AM - HH3.02
Effect of Baseline Voltage on the Set Dynamics of Phase Change Memory Devices

Kadir Cil 1 Gokhan Bakan 1 Zoila Jurado 1 Zachary Woods 1 Faruk Dirisaglik 1 Mustafa Bilal Akbulut 1 Yu Zhu 2 Chung Lam 2 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA2IBM T. J. Watson Research Center Yorktown Heights USA

Show Abstract

10:15 AM - *HH3.03
Thermal Transport in Phase Change Memory Materials

Kenneth Goodson 1

1Stanford University Stanford USA

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10:45 AM - HH3
BREAK

11:15 AM - *HH3.04
Crystal Growth in GeSb Thin Films and Electrical and Structural Characterization of PRAM Line Cells

Bart Jan Kooi 1 Gert Eising 1 Jasper Oosthoek 1

1University of Groningen Groningen Netherlands

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11:45 AM - HH3.05
Probing the Crystal Growth Velocity of Melt-Quenched Phase-Change Materials within a Memory Cell

Abu Sebastian 1 Manuel Le Gallo 1 Daniel Krebs 1

1IBM Research - Zurich Rueschlikon Switzerland

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12:00 PM - HH3.06
A Platform for Studying the Scaling of a Phase Change Material Memory Bit

Guy Cohen 1 Simone Raoux 1 Yann Astier 1 Kathleen Reuter 1 Jingwei Bai 1 Joshua Smith 1

1IBM T.J. Watson Research Center Yorktown Heights USA

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12:15 PM - HH3.07
Role of Inelastic Electron-Phonon Scattering in Ultra-Scaled Phase Change Material Nanostructures

Jie Liu 1 Xu Xu 1 Mp Anantram 1

1University of Washington Seattle USA

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12:30 PM - HH3.08
Electrochemical Preparation of Nanostructured Phase Change Random Access Memory Devices

Gabriela P. Kissling 1 Andrew Jolleys 1 Ruomeng Huang 2 Philip N. Bartlett 1 Kees de Groot 2 Andrew L. Hector 1 William Levason 1 Gillian Reid 1

1University of Southampton Southampton United Kingdom2University of Southampton Southampton United Kingdom

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2014-04-24   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Huai-Yu Cheng, Macronix International Co., Ltd.
Dong-Ho Ahn, Samsung Electronics
Martin Salinga, RWTH Aachen University
HH9: Electronic Properties of the Crystalline Phase II
Session Chairs
Raffaella Calarco
Thursday PM, April 24, 2014
Moscone West, Level 3, Room 3005

2:30 AM - *HH9.01
Theoretical and Experimental Understanding of Charge-Injection GeTe/Sb2Te3 Superlattice Phase Change Memory

Norikatsu Takaura 1

1LEAP Tsukuba Japan

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3:00 AM - HH9.02
Magnetization and Spintronics Application of Interfacial Phase Change Memory (iPCM)

Junji Tominaga 1 Yuta Saito 1 Kotaro Makino 1 Paul Fons 1 Alexander Kolobov 1 Xaomin Wang 1 Takashi Nakano 1 Hiroyuki Awano 2 Do Bang 2 Muneaki Hase 3 Shuichi Murakami 4 Yukihiko Takagaki 5

1National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Japan2Toyota Technological Institute Nagoya Japan3University of Tsukuba Tsukuba Japan4Tokyo Institute of Technology Tokyo Japan5Paul-Drude Institute Berlin Germany

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3:15 AM - HH9.03
Ab-Initio Calculations and Experimental Studies of [(SiTe)x/(Sb2Te3)y]z Interfacial Phase Change Memory

Yuta Saito 1 Junji Tominaga 1 Kotaro Makino 1 Xiaomin Wang 1 Alexander Kolobov 1 Paul Fons 1 Takashi Nakano 1

1National Institute of Advanced Industrial Science amp; Technology (AIST) Tsukuba Japan

Show Abstract

3:30 AM - HH9
BREAK

HH10: Neuromorphic Hardware/Reconfigurable Electronics
Session Chairs
Martin Salinga
Thursday PM, April 24, 2014
Moscone West, Level 3, Room 3005

4:00 AM - *HH10.01
Phase Change Materials for Bio-Inspired Computing

Luping Shi 1 Jing Pei 1 Pei Li 1 Lei Deng 1 Haizheng Xu 1 Rong Zhao 2

1Tsinghua University Beijing China2Singapore University of Technology amp; Design Singapore Singapore

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4:30 AM - *HH10.02
Emerging Resistive Memory Technologies for Neuromorphic Systems

Barbara De Salvo 1 Manan Suri 1

1CEA-LETI Grenoble France

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5:00 AM - HH10.03
Phase Change Material Memristor for Boolean Logic Operations

Nicola Ciocchini 1 Marco Cassinerio 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

Show Abstract

5:15 AM - HH10.04
Electrically Tunable Ge2Sb2Te5 Resistors Independent of the Temperature for Reconfigurable High Precision Electronics

Stefania Privitera 1 Giuseppe D'Arrigo 1 Antonio M Mio 1 Nicolamp;#242; Piluso 1 Francesco La Via 1 Emanuele Rimini 1

1National Research Council (CNR) Catania Italy

Show Abstract

HH7: Structure and Bonding
Session Chairs
Paul Fons
Thursday AM, April 24, 2014
Moscone West, Level 3, Room 3005

9:30 AM - HH7.01
The Impact of Disorder on Transport in Crystalline Phase Change Materials

Matthias Wuttig 1 Peter Jost 1 Hanno Volker 1 Simon Siegert 1 Felix Lange 1

1RWTH Aachen Aachen Germany

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9:45 AM - HH7.02
Chemical Bonding in Solid Phase-Change Materials: New Theories and New Tools

Volker L. Deringer 1 Richard Dronskowski 1 2

1RWTH Aachen University Aachen Germany2RWTH Aachen University Aachen Germany

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10:00 AM - HH7.03
Importance of Dispersion Forces for the Simulation of Amorphous Phase Change Materials

Jean-Yves Raty 1 Matthias Wuttig 3 Christophe Bichara 2

1University of Liege Sart-Tilman Belgium2CINAM-CNRS Marseille France3RWTH Aachen Germany

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10:15 AM - HH7.04
Ab-Initio Study on the Vibrational Properties of Layered Telluride Materials

Ralf Peter Stoffel 1 Richard Dronskowski 1

1RWTH Aachen University Aachen Germany

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10:30 AM - HH7.05
High-Pressure Raman Spectroscopy of Phase-Change Materials

Wen-Pin Hsieh 1 6 Peter Zalden 1 2 Matthias Wuttig 3 4 Aaron Lindenberg 1 5 6 Wendy L Mao 1 2

1SLAC Menlo Park USA2Stanford University Stanford USA