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2014 MRS Spring Meeting Logo2014 MRS Spring Meeting & Exhibit

April 21-25, 2014 | San Francisco
Meeting Chairs: Jose A. Garrido, Sergei V. Kalinin, Edson R. Leite, David Parrillo, Molly Stevens


Symposium DD : Silicon Carbide---Materials, Processing and Devices

2014-04-22   Show All Abstracts

Symposium Organizers

Feng Zhao, Washington State University
Edward Sanchez, Dow Corning Compound Semiconductor
Francesca Iacopi, Griffith University
Carl-Mikael Zetterling, KTH Royal Institute of Technology

Symposium Support

Cree, Inc.
Dow Corning Corporation
Evans Analytical Group
Panasonic
SPTS Technologies
DD2: MOS Interfaces and Defects
Session Chairs
Carl-Mikael Zetterling
Francesca Iacopi
Tuesday PM, April 22, 2014
Moscone West, Level 3, Room 3000

2:45 AM - *DD2.01
The Physical Nature of Performance Limiting Defects in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors

Patrick Lenahan 1

1Pennsylvania State University University Park USA

Show Abstract

3:15 AM - DD2.02
Thermal Oxidation of SiC vs Si - Competing Atomic and Molecular Mechanisms

Xiao Shen 1 Blair R. Tuttle 1 Sokrates T. Pantelides 1 2 3

1Vanderbilt University Nashville USA2Vanderbilt University Nashville USA3Oak Ridge National Laboratory Oak Ridge USA

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3:30 AM - DD2.03
Understanding the Influence of the SiO2/4H-SiC Interfacial Region Thickness in the Electrical Properties of MOS Structures

Eduardo Pitthan 1 Luana D. Lopes 2 Silma A. Correa 1 Rodrigo Palmieri 3 Gabriel V. Soares 1 3 Henri I. Boudinov 1 3 Fernanda C. Stedile 1 2

1Universidade Federal do Rio Grande do Sul Porto Alegre Brazil2Universidade Federal do Rio Grande do Sul Porto Alegre Brazil3Universidade Federal do Rio Grande do Sul Porto Alegre Brazil

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3:45 AM - DD2.04
Alternative Method of Interface Traps Passivation by Introducing of Thin Silicon Nitride Layer at 4H-SiC/SiO2 Interface

Aleksey Mikhaylov 1 2 Alexey Afanasyev 2 Victor Luchinin 2 Sergey Reshanov 3 Adolf Shoner 1 3

1Acreo Swedish ICT AB Kista Sweden2SPbETU "LETI" St. Petersburg Russian Federation3Ascatron AB Kista Sweden

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4:00 AM - DD2
BREAK

4:30 AM - *DD2.05
Developments of the SiC-DioMOS (Diode Integrated SiC MOSFET) and the Integrated Evaluation Platform for SiC Wafers

Makoto Kitabatake 1 2

1Device Solution Center, Ramp;D Division, Panasonic Corporation Moriguchi, Osaka Japan2Ramp;D Partnership for Future Power Electronics Technology (FUPET) Tsukuba, Ibaraki Japan

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5:00 AM - DD2.06
Nitrogen Up-Take at the 4H-SiC/SiO2 Interface During NO Passivation

Zengjun Chen 1 Yi Xu 2 Eric Garfunkel 2 Gang Liu 2 Leonard C. Feldman 2 Sarit Dhar 3

1Tuskegee University Tuskegee USA2Rutgers University New Brunswick USA3Auburn University Auburn USA

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5:15 AM - DD2.07
Counter Doping with Antimony for High Mobility 4H-SiC MOSFETs

Aaron Modic 1 Ayayi C. Ahyi 1 Yi Xu 2 Tamara Isaacs-Smith 1 John R. Williams 1 Leonard C. Feldman 2 Sarit Dhar 1

1Auburn University Auburn USA2Rutgers University Piscataway USA

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5:30 AM - DD2.08
Electrically Detected Magnetic Resonance Study of Interface Defects in 4H SiC MOSFETs

Mark Anders 1 Corey Cochrane 1 Patrick Lenahan 1 Stephen Arthur 2 James McMahon 2 Liangchun Yu 2 Xingguang Zhu 2 Aivars Lelis 3

1Penn State University University Park USA2General Electric Global Research Niskayuna USA3U.A. Army Research Center Adelphi USA

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DD1: SiC Growth
Session Chairs
Feng Zhao
Francesca Iacopi
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3000

9:30 AM - DD1
Opening Remarks

Show Abstract

9:45 AM - *DD1.01
The Place of the Chloro-Carbon Precursor in the Family of the Chloride-Based Techniques for Regular-Temperature and Low-Temperature Epitaxial Growth of SiC

Yaroslav Koshka 1 Galyna Melnychuk 1

1Mississippi State University Mississippi State USA

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10:15 AM - DD1.02
Development of High Growth Rate Epitaxy on Large Wafers for High Power Devices

Jawad Ul Hassan 1 Heung Taek Bae 2 Ian Booker 1 Louise Lilja 1 Ildiko Farkas 1 Ickchan Kim 2 Pontus Stenburg 1 Ollof Kordina 1 Peder Bergman 1 Seoyong Ha 2 Erik Janzen 1

1Linkamp;#246;ping University Linkamp;#246;ping Sweden2Components Ramp;D Center, LG Innotek Co., Ltd. 1271, Sa 3-dong, Sangrok-gu, Ansan-si, South Korea Seoul Democratic People's Republic of Korea

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10:30 AM - DD1.03
Structural Characterization of Lateral-Grown 4H/6H-SiC a/m-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Ouloide Yannick Goue 1 Balaji Raghothamachar 1 Michael Dudley 1

1Stony Brook University Stony Brook, New York USA

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10:45 AM - DD1.04
Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC

Fangzhen Wu 1 Huanhuan Wang 1 Shayan Byrapa 1 Balaji Raghothamachar 1 Michael Dudley 1 Stephan G. Mueller 2 Gil Chung 2 Edward K. Sanchez 2 Jie Zhang 2 Bernd Thomas 2 Darren Hansen 2 Mark J. Loboda 2

1Stony Brook University Stony Brook USA2Dow Corning Compound Semiconductor Solutions Midland USA

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11:00 AM - DD1
BREAK

11:30 AM - *DD1.05
Defect Reduction Paths in SiC Epitaxy

Jie Zhang 1 Darren Hansen 1 Victor Torres 1 Bernd Thomas 1 Gil Chung 1 Makoto Hosokawa 1 Ian Manning 1 Jeff Quast 1 Clinton Whiteley 1 Edward Sanchez 1 Stephen Mueller 1 Mark Loboda 1 Huanhuan Wang 2 Fangzhen Wu 2 Michael Dudley 2

1Dow Corning Corporation Auburn USA2Stony Brook University Stony Brook USA

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12:00 PM - DD1.06
Conversion of BPDs in 4H-SiC Epilayers Grown on 2deg; Offcut Substrates

Rachael Myers-Ward 1 Virginia Wheeler 1 Zachary Robinson 1 Nadeem Mahadik 1 Robert Stahlbush 1 Paul Klein 1 Charles Eddy 1 D. Kurt Gaskill 1

1Naval Research Laboratory Washington USA

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12:15 PM - DD1.07
Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

Sugiyama Naohiro 1 2 Yamada Masanori 1 2 Urakami Yasushi 1 2 Kobayashi Masakazu 1 3 Masuda Takashi 1 3 Nishikawa Koichi 1 4 Hirose Fusao 1 2 Onda Shoichi 1 2

1Ramp;D Partnership for Future Power Electronics Technology Tokyo Japan2DENSO CORPORATION Nisshin Aichi Japan3SHOWA DENKO K.K. Hikone Shiga Japan4TOYOTA Central Ramp;D Labs. Inc. Nagakute Aichi Japan

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12:30 PM - DD1.08
Epitaxial Growth of 4H-SiC on 2deg; Off-Axis (0001) Si-Face Substrates

Hirokuni Asamizu 1 2 Kentaro Tamura 1 2 Chiaki Kudou 1 3 Johji Nishio 1 4 Keiko Masumoto 1 5 Kazutoshi Kojima 1 5

1Ramp;D Partnership for Future Power Electronics Technology (FUPET) Tsukuba Japan2Rohm Co., Ltd. Kyoto Japan3Panasonic Corporation Bizen Japan4Toshiba Corporation Kawasaki Japan5National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba, Ibaraki Japan

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2014-04-23   Show All Abstracts

Symposium Organizers

Feng Zhao, Washington State University
Edward Sanchez, Dow Corning Compound Semiconductor
Francesca Iacopi, Griffith University
Carl-Mikael Zetterling, KTH Royal Institute of Technology

Symposium Support

Cree, Inc.
Dow Corning Corporation
Evans Analytical Group
Panasonic
SPTS Technologies
DD4: SiC Processing
Session Chairs
Carl-Mikael Zetterling
Francesca Iacopi
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3000

2:45 AM - DD4.01
P+ Implanted 6H-SiC n+-i-p Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

Roberta Nipoti 1 Francesco Moscatelli 1 Maurizio Puzzanghera 1

1CMR-IMM of Bologna Bologna Italy

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3:00 AM - DD4.02
High Temperature Tungsten-Nickel Ohmic Contacts to p-4H-SiC

Katherine C. Kragh-Buetow 1 Robert S. Okojie 2 Dorothy Lukco 3 Suzanne E. Mohney 1

1The Pennsylvania State University University Park USA2NASA Glenn Research Center Cleveland USA3NASA Glenn Research Center Cleveland USA

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3:15 AM - DD4.03
High Quality and High Speed Cutting of 4H-SiC JFET Wafers Including PCM Structures by Using Thermal Laser Separation

Dirk Lewke 1 Matthias Koitzsch 1 Karl Otto Dohnke 2 Martin Schellenberger 1 Hans-Ulrich Zuehlke 3 Roland Rupp 2 Lothar Pfitzner 1 Heiner Ryssel 1

1Fraunhofer Institute for Integrated Systems and Device Technology IISB Erlangen Germany2Infineon Technologies AG Erlangen Germany3JENOPTIK Automatisierungstechnik GmbH Jena Germany

Show Abstract

3:30 AM - DD4
BREAK

DD5: Bio/MEMS
Session Chairs
Francesca Iacopi
Carl-Mikael Zetterling
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3000

4:00 AM - *DD5.01
3C-SiC on Si: A Versatile Material for Electronic, Biomedical and Clean Energy Applications

Christopher L. Frewin 1 Meralys Reyes 1 Joseph Register 1 Stephen E Saddow 1

1USF Tampa USA

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4:30 AM - DD5.02
Single-Crystal 4H-SiC Microelectromechanical Actuator Device for Demanding Applications

Feng Zhao 1 Zhibang Chen 1 Allen Lim 1 Chih-Fang Huang 2

1Washington State University Vancouver USA2National Tsing Hua University Hsinchu Taiwan

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4:45 AM - DD5.03
Residual Stress and Fracture Behavior of Pressurized Epitaxial SiC Membranes

Ryan E Brock 1 Francesca Iacopi 2 Alan Iacopi 2 Leonie Hold 2 Reinhold H Dauskardt 1

1Stanford University Stanford USA2Griffiths University Brisbane Australia

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5:00 AM - DD5.04
Oligonucleotide Functionalized Silicon Carbide Electrodes for Applications in Biosensing

Matthias Sachsenhauser 1 Matthias Moritz 1 Martin Stutzmann 1 Anna Cattani-Scholz 1 Jose Antonio Garrido 1

1Walter Schottky Institut Garching Germany

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5:15 AM - *DD5.05
SiC Nanowires for Nanomedicine Applications

Giancarlo Salviati 1

1IMEM-CNR Parma Italy

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5:45 AM - DD5
Concluding Remarks

Show Abstract

DD6: Poster Session: Growth, Processing and Device Applications
Session Chairs
Wednesday PM, April 23, 2014
Marriott Marquis, Yerba Buena Level, Salons 8-9

9:00 AM - DD6.01
Impact of Growth Parameters on the Formation of Carbon Nanostructures Through Thermal Deposition of Silicon Carbide

Munson J. Anderson 1 Michael C Pochet 1 John J. Boeckl 2 Benji Maruyama 2 Pavel Nikolaev 2 Elizabeth A. Moore 2

1Air Force Institute of Technology Wright-Patterson AFB USA2Air Force Research Laboratory, AFRL/RX Wright-Patterson AFB USA

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9:00 AM - DD6.02
Home VLC Using Pinpin aSiC: H Multilayer Devices under Standard Fluorescence Light Irradiation

Paula Louro 1 2 Vamp;#237;tor Silva 1 2 Manuel A. Vieira 1 2 Manuela Vieira 1 2 3

1ISEL Lisbon Portugal2UNINOVA Caparica Portugal3FCT-UNL Caparica Portugal

Show Abstract

9:00 AM - DD6.03
Room Temperature Synthesis of Nanocrystalline Silicon Carbide

Roberto Verucchi 1 Lucrezia Aversa 1 Marco Vittorio Nardi 1 5 Simone Taioli 2 Silvio a Beccara 2 Dario Alfamp;#232; 3 Lucia Nasi 4 Francesca Rossi 4 Giancarlo Salviati 4 Salvatore Iannotta 4

1Institute of Materials for Electronics and Magnetism, IMEM-CNR Trento Italy2FBK-CMM and University of Trento Trento Italy3University College London London United Kingdom4Istituto dei Materiali per lamp;#8217;Elettronica ed il Magnetismo, IMEM-CNR Parma Italy5Humboldt-Universitamp;#228;t zu Berlin Berlin Germany

Show Abstract

9:00 AM - DD6.04
Lateral n-Channel MOSFET Demonstration on Exfoliated 4H-SiC Films

Voshadhi Amarasinghe 1 2 4 Gang Liu 1 5 Leonard Feldman 1 2 3 George Celler 1 2

1Rutgers University New Brunswick USA2Rutgers University New Brunswick USA3Rutgers University New Brunswick USA4Rutgers University New Brunswick USA5Rutgers University New Brunswick USA

Show Abstract

9:00 AM - DD6.05
Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by Using Sacrificial Oxidation

Shin-Ichiro Kuroki 1 Seiji Ishikawa 1 2 Tomonori Maeda 1 2 Hiroshi Sezaki 1 2 Takamaro Kikkawa 1

1Hiroshima University Higashi-Hiroshima Japan2Phenitec Semiconductor Co.,Ltd. Ibara Japan

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9:00 AM - DD6.06
Nanoanalytical Investigations at the Interface of 4H-SiC/SiO2 MOSFETs

Haiyan Tan 1 Katia March 2 Ana Beltran 1 3 Vincent Mortet 3 Elena Bedel-Pereira 3 Fuccio Cristiano 3 Christian Strenger 4 Anton Bauer 4 Michael P.M. JankSylvie Schamm-Chardon 1

1CNRS-CEMES, Univ. Toulouse Toulouse France2CNRS-Lab Phys Solides, Univ Paris 11 Orsay France3CNRS-LAAS Toulouse France4Fraunhofer IISB Erlangen Germany

Show Abstract

9:00 AM - DD6.07
Modelling the Barrier Height Inhomogeneity of Ni/SiC Schottky Diodes

Peter Michael Gammon 1 Vishal A. Shah 1 Amador Perez-Tomas 2 Chunwa Chan 1 Han Chen 1 Craig A. Fisher 1 Michael R. Jennings 1 Phil A. Mawby 1

1University of Warwick Coventry United Kingdom2IMB-CNM-CSIC Barcelona Spain

Show Abstract

9:00 AM - DD6.08
Influence of Nitrogen Concentrations on the Lattice Constants and Resistivies in N-type 4H-SiC Single Crystals

Xiaobo Hu 1 Yan Peng 1 Xiufang Chen 1 Yingxin Cui 1 Xiangang Xu 1

1Shandong University Jinan China

Show Abstract

9:00 AM - DD6.09
Patch Antennas Utilizing Semi-Insulating SiC for Monolithic Integration of the Antenna Subsystem on a SiC Chip

Tutku Karacolak 2 Rooban Venkatesh K. G. Thirumalai 1 Erdem Topsakal 1 Yaroslav Koshka 1

1Mississippi State University Mississippi State USA2Washington State University Vancouver USA

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9:00 AM - DD6.10
Ohmic and Rectifying Contacts to n-SiC Formed by Energetic Deposition of Carbon

Masturina Kracica 2 Jim G Partridge 2 Dougal G McCulloch 2 Patrick W Leech 1 Anthony Stephen Holland 1 Philip Tanner 3 Geoffrey K Reeves 1

1RMIT University Melbourne Australia2RMIT University Melbourne Australia3Griffith University Nathan Australia

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9:00 AM - DD6.11
Graphene Grown on Ion-Implanted 4H-SiC and an Effect of Pre-Plasma Treatment

Toru Sugimachi 1 Yusuke Shiina 1 Daiki Aoyagi 1 Tomoaki Nishimura 2 Tohru Nakamura 1

1Hosei University Tokyo Japan2Hosei University Tokyo Japan

Show Abstract

9:00 AM - DD6.12
The Effect of Neutron Radiation on the Electrical Characteristics of SiC Schottky Diodes

Sung-Su Kim 1 Min-Seok Kang 1 Tae-Seop Lee 1 Sang-Mo Koo 1

1Kwangwoon University Seoul Republic of Korea

Show Abstract

9:00 AM - DD6.14
Graphene Growth on Epi-SiC and Bulk-SiC under Various Conditions

Casey Strope 1 John Boeckl 3 Zhonghang Ji 2 Yan Zhuang 2 Li Wang 4 Francesca Iacopi 4 Hong Huang 1 Shanee Pacley 3

1Wright State University Dayton USA2Wright State University Dayton USA3Wright-Patterson Air Force Research Laboratory Dayton USA4Griffith University Nathan Australia

Show Abstract

9:00 AM - DD6.15
SiC Waveguide-Based Surface Plasmon Resonance Sensor for Sensing Applications

Wei Du 1 Feng Zhao 1

1Washington State University Vancouver USA

Show Abstract

9:00 AM - DD6.16
A Novel 3C-SiC/Si Heterojunction Lateral Schottky Diode Design

Yogesh Kumar Sharma 1 Fan Li 1 M. R. Jennings 1 Philip Mawby 1 Craig Fisher 1

1Warwick University Coventry United Kingdom

Show Abstract

9:00 AM - DD6.17
Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

Craig Arthur Fisher 1 Michael R. Jennings 1 Stephen M Thomas 1 Dean P. Hamilton 1 Yogesh K. Sharma 1 Peter M. Gammon 1 Philip A. Mawby 1

1University of Warwick Coventry United Kingdom

Show Abstract

9:00 AM - DD6.18
Photosensitive Capacitance Effect In High-Purity Semi-Insulating (HPSI) 4H-SiC

Joseph Register 1 Stephen E Saddow 1

1University of South Florida Tampa USA

Show Abstract

9:00 AM - DD6.20
Dual-Gated Silicon Carbide Nanoribbon Transistors for Sensor Applications

Min-Seok Kang 1 Carl-Mikael Zetterling 2 Anders Hallen 2 Sang-Mo Koo 1

1Kwangwoon University Seoul Republic of Korea2KTH, Royal Inst. of Technology Kista Sweden

Show Abstract

DD3: SiC Devices and Circuits
Session Chairs
Carl-Mikael Zetterling
Feng Zhao
Wednesday AM, April 23, 2014
Moscone West, Level 3, Room 3000

9:30 AM - *DD3.01
High Voltage SiC Power Switches with Superior Energy Efficiency and Their Drive Electronics

Mikael Ostling 1

1KTH Royal Insititute of Technology Kista Sweden

Show Abstract

10:00 AM - DD3.02
Comparison of Channel Mobility and Oxide Properties of MOSFET Devices on Si-Face (0001) and A-Face (11-20) 4H-SiC

Daniel Jenner Lichtenwalner 1 Lin Cheng 1 Scott Allen 1 John W. Palmour 1

1CREE, Inc. Durham USA

Show Abstract

10:15 AM - DD3.03
Aging Issues Related to SiC Power Devices and a Possible Solution

Dean Hamilton 1 Michael Jennings 1 Yogesh Sharma 1 Stephen Thomas 1 Philip Mawby 1

1University of Warwick Coventry United Kingdom

Show Abstract

10:30 AM - DD3.04
Design, Fabrication and Characterization of High Voltage PiN Diodes Using On-Axis 4H-SiC

Arash Salemi 1 Benedetto Buono 1 Anders Hallen 1 Jawad Ul Hassan 2 Peder Bergman 2 Carl Mikael Zetterling 1 Mikael Ostling 1

1KTH Royal Institute of Technology Kista Sweden2Linkamp;#246;ping University Linkamp;#246;ping Sweden

Show Abstract

10:45 AM - DD3
BREAK

11:15 AM - *DD3.05
CMOS Circuits on Silicon Carbide for High Temperature Operation

Robin F Thompson 1 David T Clark 1 Aled E Murphy 1 David A Smith 1 Ewan P Ramsay 1 Robert AR Young 1

1Raytheon UK Glenrothes United Kingdom

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11:45 AM - DD3.06
Integrated Silicon Carbide Bipolar Technology for Radio Frequency Applications

Gunnar Bengt Malm 1 Luigia Lanni 1 Carl-Mikael Zetterling 1

1KTH Royal Institute of Technology Kista Sweden

Show Abstract

12:00 PM - DD3.07
4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

Baptiste Berenguier 1 Laurent Ottaviani 1 Stephane Biondo 1 Olivier Palais 1 Mihai Lazar 2 Frederic Milesi 3 Frank Torregrosa 3 Abdallah Lyoussi 4 Alexander Lebedev 5 Evgenia V Kalinina 5 Wilfried Vervisch 6

1IM2NP Marseille cedex 20 France2INSA-Lyon Lyon France3CEA LETI Grenoble France4CEA/DEN/CAD/DER/SPEx Saint Paul les Durence France5IOFFE Institute St Petersburg Russian Federation6IM2NP Marseille cedex 20 France

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12:15 PM - DD3.08
Silicon Carbide Junction Transistors and Schottky Rectifiers Optimized for 250deg;C Operation

Siddarth Sundaresan 1 Ranbir Singh 1

1GeneSiC Semiconductor Dulles USA

Show Abstract

12:30 PM - DD3.09
Boron-Based 4H-SiC Neutron Sensors Tested under Irradiation at High Temperature

Vanessa Vervisch 1 Fatima Issa 1 Laurent Ottaviani 1 Dora Szalkai 2 Axel Klix 2 Mihai Lazar 3 Ludo Vermeeren 4 Andrej Kuznetsov 5 Anders Hallen 6 Abdallah Lyoussi 7

1IM2NP - AMU Marseille Cedex 20 France2KIT Dresden Germany3Laboratoire Ampere INSA Lyon France4SCK CEN Mol Belgium5UiO Oslo Norway6KTH KISTA Sweden7CEA St paul lez Durance France

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2014-04-24   Show All Abstracts

Symposium Organizers

Feng Zhao, Washington State University
Edward Sanchez, Dow Corning Compound Semiconductor
Francesca Iacopi, Griffith University
Carl-Mikael Zetterling, KTH Royal Institute of Technology

Symposium Support

Cree, Inc.
Dow Corning Corporation
Evans Analytical Group
Panasonic
SPTS Technologies
DD7: Graphene
Session Chairs
Feng Zhao
Carl-Mikael Zetterling
Thursday AM, April 24, 2014
Moscone West, Level 3, Room 3000

9:30 AM - *DD7.01
The ABC of Trilayer Graphene

Camilla Coletti 1 2

1CNI@NEST, Istituto Italiano di Tecnologia Pisa Italy2Max-Planck-Institut famp;#252;r Festkamp;#246;rperforschung Stuttgart Germany

Show Abstract

10:00 AM - DD7.02
High Quality Patterned Graphene on Epitaxial SiC on Silicon

Francesca Iacopi 1 Benjamin V. Cunning 1 Mohsin Ahmed 1 Neeraj Mishra 1 Fida Rafi 1 Evan Gray 1 Sima Dimitrijev 1 Barry Wood 2

1Griffith University Nathan Australia2The University of Queensland St.Lucia Australia

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10:15 AM - DD7.03
Controlling the Electronic Properties and Gas Reactivity of Epitaxial Graphene on SiC by Surface Functionalization with Nanostructured Metals or Metal-Oxides

Jens Eriksson 1 Donatella Puglisi 1 Yu Hsuan Kang 1 Rositza Yakimova 2 3 Anita Lloyd Spetz 1

1Linkamp;#246;ping University Linkamp;#246;ping Sweden2Graphensic AB Linkamp;#246;ping Sweden3Linkamp;#246;ping University Linkamp;#246;ping Sweden

Show Abstract

10:30 AM - DD7.04
Study of Si Diffusion during Epitaxial Growth of Graphene on SiC/Si Substrates in UHV

Bharati Gupta 1 Marco Notarianni 1 Neeraj Mishra 2 William Macaskill 1 Mahnaz Shafiei 1 Francesca Iacopi 2 Nunzio Motta 1

1Queensland University of Technology Brisbane Australia2Griffith University Brisbane Australia

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10:45 AM - DD7.05
Accumulation of C Atoms at SiO2/SiC Interface by Plasma Oxidation of 4H-SiC(0001) at Room Temperature: Toward Formation of Pit-Free Graphene

Kenta Arima 1 Naoki Saito 1 Kentaro Kawai 1 Yasuhisa Sano 1 Mizuho Morita 1

1Osaka University Suita Japan

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11:00 AM - DD7
BREAK

DD8: Novel Applications
Session Chairs
Feng Zhao
Francesca Iacopi
Thursday AM, April 24, 2014
Moscone West, Level 3, Room 3000

11:30 AM - *DD8.01
Nano Carbon 1D and 2D Nanomechanical Resonators and Switches

Anupama Kaul 1 Philip X.-L. Feng 2

1JPL-Caltech amp; NSF Virginia USA2Case Western Reserve Cleveland USA

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12:00 PM - DD8.02
Beating the Diffraction Limit with Polar Dielectrics: SiC-Based, Low-Loss Optical Antennas

Joshua D Caldwell 1 Francisco J Bezares 1 Yan Francescato 2 Orest Glembocki 1 Nicholas Sharac 3 Vincenzo Giannini 2 James P Long 1 Jeffrey C Owrutsky 1 Chase Ellis 1 Joseph G Tischler 1 Igor Vurgaftman 1 Stefan A. Maier 2 Thomas Reinecke 1 Lucas Lindsey 1 Virginia Wheeler 1 Eugene Imhoff 1 Loretta Shirey 1 Nabil D Bassim 1 Richard Kasica 4

1Naval Research Laboratory Washington USA2Imperial College - London London United Kingdom3University of California - Irvine Irvine USA4National Institutes of Standards and Technology Gaithersburg USA

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12:15 PM - DD8.03
Novel SiC Detector Based on Optical Signal Instead of Electrical Signal

Aravinda Kar 1 3 Geunsik Lim 1 Tariq Manzur 1 2

1CREOL, The Collge of Optics and Photonics Orlando USA2Undersea warfare electromagnetic systems and development Newport USA3UNiversity of Central Florida Orlando USA

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12:30 PM - DD8.04
New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection Enhancement

Moussa Toure 2 Baptiste Berenguier 1 Laurent Ottaviani 1 Marcel Pasquinelli 1 Olivier Palais 1 Patrizia Di Lauro 1 Marc Portail 3 Sebastien Chenot 3 Diouma Kobor 2

1IM2NP Marseille cedex 20 France2Universitamp;#233; Assane Seck de Ziguinchor Ziguinchor Senegal3CNRS Nice France

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