Meetings & Events

Publishing Alliance

MRS publishes with Springer Nature

 

Corporate Partners

 

2014 MRS Spring Meeting Logo2014 MRS Spring Meeting & Exhibit

April 21-25, 2014 | San Francisco
Meeting Chairs: Jose A. Garrido, Sergei V. Kalinin, Edson R. Leite, David Parrillo, Molly Stevens


Symposium BB : Materials for End-of-Roadmap Devices in Logic, Power and Memory

2014-04-22   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Andrew C. Kummel, University of California, San Diego
Paul C. McIntyre, Stanford University
Masaaki Niwa, Tohoku University

Symposium Support

Picosun USA LLC
BB3: Resistive RAM I
Session Chairs
Gennadi Bersuker
Tuesday PM, April 22, 2014
Moscone West, Level 3, Room 3001

2:30 AM - BB3.01
Modeling Noise and Variability in Oxide-Based RRAM

Stefano Ambrogio 1 Simone Balatti 1 Antonio Cubeta 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

Show Abstract

2:45 AM - BB3.02
HfO2 for Resistive Memory: From CBRAM to OxRAM

Cedric Mannequin 1 Christophe Vallee 1 Patrice Gonon 1 Mohamed Saadi 1 Laurence Latu-Romain 1 Helen Grampeix 2 Vincent Jousseaume 2

1UJF Grenoble France2CEA Grenoble France

Show Abstract

3:00 AM - *BB3.03
Intrinsic Variability of RRAM Devices

Gennadi Bersuker 1

1SEMATECH Albany USA

Show Abstract

3:30 AM - BB3.04
Comparison of Oxygen Vacancy Creation, Migration, Coalescent and Dispersion Energies for Different Metal Oxides for RRAM

Yuzheng Guo 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

Show Abstract

3:45 AM - BB3.05
In-Situ TEM Biasing Investigation on Evolution of Wadsley Defects/Magneacute;li Phases during Resistive Switching Events in TiO2-Based RRAMs

Jonghan Kwon 1 Abhishek A. Sharma 2 James A. Bain 2 Yoosuf N. Picard 1 Marek Skowronski 1

1Carnegie Mellon University Pittsburgh USA2Carnegie Mellon University Pittsburgh USA

Show Abstract

4:00 AM - BB3
BREAK

4:30 AM - BB3.06
Enhancing the Performance of Metal/Insulator/Insulator/Metal (MIIM) Diodes

John F. Conley 1 Nasir Alimardani 1 Benjamin L. French 2 Sean W. King 3

1Oregon State University Corvallis USA2Intel Corp. Chandler USA3Intel Corp. Hillsboro USA

Show Abstract

4:45 AM - BB3.07
Resolving Voltage-Time Dilemma Using an Atomic Lever of Sub-Picosecond Electron-Phonon Interaction

Xiang Yang 1 Ioan Tudosa 1 I-Wei Chen 1

1University of Pennsylvania Philadelphia USA

Show Abstract

5:00 AM - *BB3.08
Challenges and Materials Solutions for Memristive Devices (ReRAM)

J. Joshua Yang 1

1Hewlett Packard Laboratories Palo Alto USA

Show Abstract

5:30 AM - BB3.09
Electroforming of Resistively Switching Fe:STO Samples Made Visible by Electrocoloration Observed by High Resolution Optical Microscopy

Viktor Havel 1 3 Astrid Marchewka 1 3 Stephan Menzel 2 3 Rainer Waser 1 2 3

1RWTH Aachen Aachen Germany2Forschungszentrum Jamp;#252;lich GmbH Jamp;#252;lich Germany3JARA - Fundamentals of Future Information Technology Aachen / Jamp;#252;lich Germany

Show Abstract

5:45 AM - BB3.10
Materials Challenges in NEMS Logic: Failure Mechanisms and Novel Materials Solutions

Robert W. Carpick 1 Frank Streller 1 Graham E. Wabiszewski 1 Filippo Mangolini 1 Gang Feng 2 Gianluca Piazza 3

1University of Pennsylvania Philadelphia USA2Villanova University Villanova USA3Carnegie Mellon University Pittsburgh USA

Show Abstract

BB1: III-V Semiconductors I
Session Chairs
Andrew C. Kummel
John Robertson
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3001

9:00 AM - BB1.01
Al2O3/InGaAs Interface and Bulk Oxide Defect Passivation

Kechao Tang 1 Jaesoo Ahn 1 Tyler Kent 2 Evgueni Chagarov 2 Ravi Droopad 3 Andrew C Kummel 2 Paul C McIntyre 1

1Stanford University Stanford USA2University of California, San Diego La Jolla USA3Texas State University San Marcos USA

Show Abstract

9:15 AM - BB1.02
Self-Limiting and Saturating CVD of a Silicon Seed Layer on InGaAs(001)-(2x4)

Mary Edmonds 1 Tyler Kent 1 Ravi Droopad 3 Evgueni Chagarov 2 Andrew Kummel 2

1University of California, San Diego La Jolla USA2University of California, San Diego La Jolla USA3Texas State University San Marcos USA

Show Abstract

9:30 AM - BB1.03
In, Al, Ga, As Compounds Grown by MOCVD for MOSFET Channel on Blanket and Patterned 300 mm Si (100) Substrates Exhibiting Room Temperature Photoluminescence

Thierry Baron 1 Romain Cipro 1 Mickael Martin 1 Franck Bassani 1 S. Arnaud 1 S. David 1 Viktoria Gorbenko 1 2 Jean-Paul Barnes 2 Yann Bogumilowicz 2 Patrice Gergaud 2 Nevine Rochas 2 Virginie Loup 2 Christian Vizioz 2 Karim Yckache 2 Nicolas Chauvin 3 Xin Yu Bao 4 Zhiyuan Ye 4 David Carlson 4 Jean-Baptiste Pin 4 Errol Sanchez 4

1CNRS-LTM Grenoble France2CEA Grenoble France3Universitamp;#233; de Lyon Villeurbanne France4AMAT Santa Clara USA

Show Abstract

9:45 AM - BB1.04
Passivation of III-V Oxide Interfaces with Nitrogen

Yuzheng Guo 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

Show Abstract

10:00 AM - *BB1.05
CMOS Scaling Beyond the Si Roadmap

Marc Heyns 1 2

1IMEC Leuven Belgium2KULeuven - MTM Leuven Belgium

Show Abstract

10:30 AM - *BB1.06
ALD of Epitaxial Oxides on III-V Semiconductors for MOSFETs

Roy G. Gordon 1 2 Xinwei Wang 1 3 Xiabing Lou 1 Ling Dong 4 Peide D. Ye 4

1Harvard University Cambridge USA2Harvard University Cambridge USA3Peking University Shenzhen Graduate School Shenzhen China4Purdue University West Lafayette USA

Show Abstract

11:00 AM - BB1
BREAK

BB2: Ge Based Channels
Session Chairs
Paul C. McIntyre
Tuesday AM, April 22, 2014
Moscone West, Level 3, Room 3001

11:30 AM - BB2.01
Effect of In-Situ Boron Doping in Germanium Source Regions on Performance of Germanium/Strained-Silicon-on-Insulator Tunnel Field-Effect Transistors

Minsoo Kim 1 Yuki Wakabayashi 1 Ryosho Nakane 1 Masafumi Yokoyama 1 Mitsuru Takenaka 1 Shinichi Takagi 1

1The University of Tokyo Tokyo Japan

Show Abstract

11:45 AM - BB2.02
Fabrication and Demonstration of High Performance Tensile-Strained GeOI nMOSFETs

Tatsuro Maeda 1 Yuuichi Kamimuta 1 Yoshihiko Moriyama 1 Eiko Mieda 1 Wipakorn Jevasuwan 1 Yuichi Kurashima 2 Hideki Takagi 2 Minoru Oda 1 Toshifumi Irisawa 1 Keiji Ikeda 1 Etsuo Kurosawa 1 Tsutomu Tezuka 1

1AIST Tsukuba Japan2AIST Tsukuba Japan

Show Abstract

12:00 PM - *BB2.03
Retarded Oxidation Rate of Ge in High-Pressure O2

Akira Toriumi 1 2 Choong-hyun Lee 1 2 Tomonori Nishimura 1 2

1The University of Tokyo Tokyo Japan2JST-CREST Tokyo Japan

Show Abstract

12:30 PM - *BB2.04
Defects at the Ge/Oxide Interface: Properties and Passivation

Marco Fanciulli 1 2 Stefano Paleari 1 Alessandro Molle 2 Federico Accetta 1 Abdelmadjid Mesli 3

1University of Milano Bicocca Milano Italy2CNR Agrate Brianza Italy3Universitamp;#233; Paul Camp;#233;zanne Marseille France

Show Abstract

2014-04-23   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Andrew C. Kummel, University of California, San Diego
Paul C. McIntyre, Stanford University
Masaaki Niwa, Tohoku University

Symposium Support

Picosun USA LLC
BB6: III-V Semiconductors III
Session Chairs
Andrew C. Kummel
Wednesday PM, April 23, 2014
Moscone West, Level 3, Room 3001

2:30 AM - BB6.01
Synchrotron Texture Analysis on Ultrathin Ni-Based Germanosilicide in Bottom of Trenches: Application to pMOS 14nm UTBB SOI

Emilie Bourjot 1 2 3 Tra Nguyen Thanh 3 4 Nathalie Boudet 4 Patrice Gergaud 3 Yves Morand 1 Jean-Michel Hartmann 3 Christian Vizioz 3 Jonathan Pradelles 3 Fabrice Nemouchi 3 Magali Gregoire 1 Dominique Mangelinck 2

1ST-Microelectronics Crolles France2CNRS-Aix Marseille University Marseille France3CEA-Leti Grenoble France4CRG-D2AM, ESRF amp; Inst. Namp;#233;el Grenoble France

Show Abstract

2:45 AM - *BB6.02
Disorder Induced Gap States at the High-k/III-V Interface

Eric M Vogel