Robert Spurling1,Chloe Skidmore1,John Hayden1,Josh Nordlander1,Joseph Casamento1,2,Kyle Kelley3,Jon-Paul Maria1
The Pennsylvania State University1,Massachusetts Institute of Technology2,Oak Ridge National Laboratory3
Robert Spurling1,Chloe Skidmore1,John Hayden1,Josh Nordlander1,Joseph Casamento1,2,Kyle Kelley3,Jon-Paul Maria1
The Pennsylvania State University1,Massachusetts Institute of Technology2,Oak Ridge National Laboratory3
We report on observations of ferroelectric switching in multilayered sputtered thin films based on wurtzite Zn<sub>1-x</sub>Mg<sub>x</sub>O and Al<sub>1-x</sub>B<sub>x</sub>N. Ferroelectric switching is achieved in thin film stacks containing ferroelectric and polar non-ferroelectric layers. Total polarizations indicate switching is achieved across the entire film stacks, suggesting propagation of ferroelectric domains across interfaces between layers. We investigate switching pathways and wake-up behavior in these films as characterized through an array of structural and property measurement techniques. We also discuss synthesis controls in Zn<sub>1-x</sub>Mg<sub>x</sub>O sputtered thin films, with an emphasis on connections between structure and electrical properties. We focus on the effect of oxygen chemical potential and temperature on film microstructure and resistivity.